Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDMS3500
Trench®
N-Channel Power
tm
MOSFET
75V, 49A, 14.5m:
Features
General Description
Max rDS(on) = 14.5m: at VGS = 10V, ID = 11.5A
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Max rDS(on) = 16.3m: at VGS = 4.5V, ID = 10A
Advanced Package and Silicon combination for low rDS(on)
MSL1 robust package design
100% UIL Tested
Application
RoHS Compliant
DC - DC Conversion
Bottom
Top
S
D
D
D
Pin 1
S
S
G
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
D
Power 56
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25°C
-Continuous (Silicon limited)
TC = 25°C
-Continuous
TA = 25°C
PD
TJ, TSTG
Units
V
±20
V
49
57
(Note 1a)
9.2
(Note 3)
384
-Pulsed
A
100
Single Pulse Avalanche Energy
EAS
Ratings
75
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
96
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RTJC
Thermal Resistance, Junction to Case
RTJA
Thermal Resistance, Junction to Ambient
1.3
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS3500
Device
FDMS3500
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C2
Package
Power 56
1
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
www.fairchildsemi.com
FDMS3500 N-Channel Power Trench® MOSFET
October 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250PA, VGS = 0V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250PA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VGS = 0V, VDS = 60V,
1
PA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
3.0
V
75
V
71
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250PA
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250PA, referenced to 25°C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
1.0
1.8
-6.8
mV/°C
VGS = 10V, ID = 11.5A
11.1
VGS = 4.5V, ID = 10A
12.8
16.3
VGS = 10V, ID = 11.5A, TJ = 125°C
17.6
23.0
VDD = 5V, ID = 11.5A
14.5
56
m:
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 40V, VGS = 0V,
f = 1MHz
f = 1MHz
3580
4765
pF
225
300
pF
120
175
pF
:
1.2
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
16
29
9
18
ns
ns
48
77
ns
VDD = 40V, ID = 11.5A,
VGS = 10V, RGEN = 6:
6
11
ns
Total Gate Charge
VGS = 0V to 10V
65
91
nC
Qg
Total Gate Charge
VGS = 0V to 5V
34
48
nC
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 40V,
ID = 11.5A
9.9
nC
11.6
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 11.5A
(Note 2)
0.8
1.3
VGS = 0V, IS = 2.1A
(Note 2)
0.7
1.2
IF = 11.5A, di/dt = 100A/Ps
V
38
60
ns
45
72
nC
NOTES:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
a. 50°C/W when mounted on a
1 in2 pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 3mH, IAS = 16A, VDD = 75V, VGS = 10V
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C2
2
www.fairchildsemi.com
FDMS3500 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
3.0
VGS = 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
100
VGS = 4V
ID, DRAIN CURRENT (A)
80
VGS = 3.5V
VGS = 4.5V
60
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
40
VGS = 3V
20
0
0
1
2
2.5
VGS = 3.5V
2.0
VGS = 4V
1.5
1.0
0.5
3
0
20
40
60
80
100
ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
40
ID = 11.5A
VGS = 10V
1.8
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE (m:)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10V
VGS = 4.5V
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID = 11.5A
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
30
TJ = 125oC
20
10
TJ = 25oC
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
100
IS, REVERSE DRAIN CURRENT (A)
100
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
80
ID, DRAIN CURRENT (A)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VGS = 3V
VDS = 5V
60
TJ =
150oC
40
TJ =
25oC
20
TJ = -55oC
0
0
1
2
3
4
VGS = 0V
10
TJ = 150oC
1
TJ = 25oC
TJ = -55oC
0.1
0.01
0.001
0.0
5
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C2
3
1.2
www.fairchildsemi.com
FDMS3500 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10000
ID = 11.5A
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 40V
6
VDD = 30V
VDD = 50V
4
Ciss
1000
Coss
100
2
30
0.1
0
0
10
20
30
40
50
60
70
1
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
60
ID, DRAIN CURRENT (A)
20
IAS, AVALANCHE CURRENT(A)
75
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
10
TJ
= 25oC
TJ = 125oC
50
40
VGS = 10V
Limited by Package
30
VGS = 4.5V
20
10
o
RTJC = 1.3 C/W
1
0.01
0.1
1
10
100
0
25
400
50
tAV, TIME IN AVALANCHE(ms)
100
125
150
o
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
1000
400
THIS AREA IS
LIMITED BY rDS(on)
10
P(PK), PEAK TRANSIENT POWER (W)
100
75
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
ID, DRAIN CURRENT (A)
Crss
f = 1MHz
VGS = 0V
1ms
10ms
1
0.1
0.01
0.01
100ms
SINGLE PULSE
TJ = MAX RATED
RTJA = 125oC/W
1s
TA = 25oC
10s
DC
0.1
1
10
100 300
SINGLE PULSE
RTJA = 125oC/W
TA = 25oC
100
10
1
0.5
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C2
VGS = 10V
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS3500 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZTJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
o
RTJA = 125 C/W
0.001
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C2
5
www.fairchildsemi.com
FDMS3500 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
5.10
PKG
CL
8
5.10
3.91
A
SEE
DETAIL B
B
5
1.27
8
7
6
5
0.77
4.52
PKG CL
5.85
5.65
6.15
3.75
6.61
KEEP OUT
AREA
1.27
1
4
1
TOP VIEW
2
3
4
0.61
1.27
3.81
OPTIONAL DRAFT
ANGLE MAY APPEAR
ON FOUR SIDES
OF THE PACKAGE
SEE
DETAIL C
5.00
4.80
LAND PATTERN
RECOMMENDATION
0.35
0.15
0.10 C
0.05
0.00
SIDE VIEW
8X
0.08 C
5.20
4.80
1.10
0.90
3.81
0.35
0.15
DETAIL C
SCALE: 2:1
1.27
0.51 (8X)
0.31
(0.34)
0.10
1
2
3
C A B
4
0.76
0.51
(0.52)
6.25
5.90
3.48+0.30
-0.10
(0.50)
(0.30)
(2X)
8
0.20+0.10
-0.15 (8X)
7
6
3.96
3.61
BOTTOM VIEW
0.30
0.05
5
C
SEATING
PLANE
DETAIL B
SCALE: 2:1
NOTES: UNLESS OTHERWISE SPECIFIED
A. PACKAGE STANDARD REFERENCE: JEDEC MO-240,
ISSUE A, VAR. AA,.
B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH.
MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009.
E. IT IS RECOMMENDED TO HAVE NO TRACES OR
VIAS WITHIN THE KEEP OUT AREA.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
1
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com
工商网监
湘ICP备2023018690号
