FDMS4D0N12C

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, PQFN8 V(BR)DDS 120 V, 4.0 mW, 114 A 120 V FDMS4D0N12C ID MAX RDS(on) MAX 67 A 4.0 mΩ @ 10 V 33 A 8.0 mΩ @ 6 V ELECTRICAL CONNECTION Features • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These are Pb−free, Halogen Free / BFR Free and are RoHS Compliant Typical Applications • • • • N-Channel MOSFET Synchronous Rectification AC−DC and DC−DC Power Supplies AC−DC Adapters (USB PD) SR Load Switch MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 120 V Gate−to−Source Voltage VGS ±20 V ID 114 A Continuous Drain Current RθJC (Note 7) Steady State TC = 25°C MARKING DIAGRAM Power Dissipation RθJC (Note 2) Continuous Drain Current RθJA (Note 6, 7) Steady State TA = 25°C Power Dissipation RθJA (Note 6, 7) Pulsed Drain Current PQFN8 5x6 (Power 56) CASE 483AF TA = 25°C, tp = 10 μs Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IAV = 66.7 A, L = 0.1 mH) Lead Temperature Soldering Reflow for Soldering Purposes (1/8” from case for 10 s) PD 106 W ID 18.5 A PD 2.7 W IDM 628 A TJ, Tstg −55 to +150 °C IS 114 A EAS 222 mJ TL 300 °C $Y&Z&3&K FDMS 4D0N12C $Y &Z &3 &K FDMS4D0N12C = onsemi Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2013 September, 2021 − Rev. 3 1 Publication Order Number: FDMS4D0N12C/D FDMS4D0N12C ORDERING INFORMATION Device Package Shipping† FDMS4D0N12C PQFN8 (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit °C/W Junction*to*Case – Steady State (Note 7) RqJC 1.18 Junction*to*Ambient – Steady State (Note 7) RqJA 45 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions V(BR)DSS VGS = 0 V, ID = 250 mA Min Typ Max Unit OFF CHARACTERISTICS Drain*to*Source Breakdown Voltage Drain*to*Source Breakdown Voltage V (BR)DSS/ TJ Temperature Coefficient Zero Gate Voltage Drain Current Gate*to*Source Leakage Current IDSS mV/°C 49 ID = 250 mA, ref to 25°C VGS = 0 V, VDS = 96 V V 120 TJ = 25°C 1 mA TJ = 125°C 100 mA ±100 nA 4.0 V IGSS VDS = 0 V, VGS = ± 20 V VGS(TH) VGS = VDS, ID = 370 mA VGS(TH) /TJ ID = 370 mA, ref to 25°C −8.5 VGS = 10 V, ID = 67 A 3.3 4.0 VGS = 6 V, ID = 33 A 4.7 8.0 ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain*to*Source On Resistance RDS(on) 2.0 mV/°C mΩ Forward Transconductance gFS VDS = 5 V, ID = 67 A 144 Gate−Resistance RG TA = 25°C 0.9 1.8 Ω Input Capacitance CISS 4565 6460 pF Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = 60 V 2045 3060 Reverse Transfer Capacitance CRSS 17 24 S CHARGES & CAPACITANCES Total Gate Charge QG(TOT) VGS = 6 V, VDS = 60 V, ID = 67 A 36 51 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 60 V, ID = 67 A 58 82 nC 21 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 9 Plateau Voltage VGP 5 V Output Charge QOSS 207 nC VDD = 60 V, VGS = 0 V www.onsemi.com 2 FDMS4D0N12C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit 25 41 ns 8 16 tD(OFF) 45 72 tf 12 22 TJ = 25°C 0.86 1.3 TJ = 125°C 0.7 1.2 53 84 ns 175 280 nC 36 57 ns 360 575 nC SWITCHING CHARACTERISTICS (Note 8) Turn*On Delay Time Rise Time Turn*Off Delay Time Fall Time td(ON) tr VGS = 10 V, VDS = 60 V, ID = 67 A, RG = 6 W DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 67 A VGS = 0 V, dIS/dt = 300 A/ms, IS = 33 A VGS = 0 V, dIS/dt = 1000 A/ms, IS = 33 A V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqCA is determined by the user’s board design. a) 45°C/W when mounted on a 1 in2 pad of 2 oz copper. b) 115°C/W when mounted on a minimum pad of 2 oz copper. 2. 3. 4. 5. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. EAS of 222 mJ is based on starting TJ = 25_C; L = 0.1 mH, IAS = 66.7 A, VDD = 100 V, VGS = 12 V, 100% tested at L = 0.1 mH, IAS = 66.7 A. Pulsed ID please refer to Fig. 11 SOA graph for more details. Computed continuous current limited to max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. 6. Surface−mounted on FR4 board using 1 in2 pad size, 2 oz Cu pad. 7. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 8. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 FDMS4D0N12C TYPICAL CHARACTERISTICS 40 RDS(ON), ON−Resistance (mΩ) 150 VGS = 10 V 8V 6V 5V 100 50 0 0.0 0.5 1.0 1.5 30 20 10 TJ = 125°C TJ = 25°C 2.0 4 5 6 25°C TJ = 150°C 50 −55°C 0 3.0 4.0 5.0 6.0 7.0 5.0 VGS = 10 V 8V 6V 5V 4.0 3.0 2.0 1.0 0.0 0 50 VGS, Gate to Source Voltage (V) 100 150 Figure 4. Normalized On-Resistance vs. Drain Current and Gate Voltage 2.2 10000 Capacitance (pF) ID = 67 A VGS = 10 V 1.6 1.4 1.2 1.0 0 25 50 75 100 125 Coss 100 Crss 10 1 −25 Ciss 1000 0.8 −50 200 ID, Drain Current (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(ON), Normalized Drain−to−Source ON−Resistance 10 Figure 2. Transfer Characteristics 100 0.6 −75 9 Figure 1. On-Region Characteristics 150 1.8 8 VGS, Gate to Source Voltage (V) VDS = 5 V 2.0 7 VDS, Drain−Source Voltage (V) 200 ID, Drain Current (A) ID = 67 A 0 RDS(ON), Normalized Drain−to−Source ON−Resistance ID, Drain Current (A) 200 150 f = 1 MHz VGS = 0 V 0.1 TJ, Junction Temperature (°C) 1 10 VDS, Drain to Source Voltage (V) Figure 5. Normalized On−Resistance Variation with Temperature www.onsemi.com 4 Figure 6. Capacitance Variation 100 FDMS4D0N12C 10 VGS = 0 V 100 8 VDD = 30 V IS, Source Current (A) VGS, Gate−to−Source Voltage (V) TYPICAL CHARACTERISTICS (continued) VDD = 60 V 6 VDD = 90 V 4 2 10 TJ = 150°C 1 0,1 25°C −55°C 0,01 0,001 0 0 12 24 36 48 60 0.0 0.2 QG, Total Gate Charge (nC) 1.0 1.2 100 IAS, Avalanche Current (A) ID, Drain Current (A) 0.8 Figure 8. Diode Forward Voltage vs. Current 1000 10 μs 100 10 100 μs RDS(ON) LIMIT SINGLE PULSE RθJC = 1.18°C/W TC = 25°C 1 0.1 0.1 1 ms 10 ms 100 ms/DC 1 10 25°C 100°C 10 125°C 1 0.001 100 0.01 VDS, Drain−Source Voltage (V) 100 100000 Peak Transient Power (W) 1000000 VGS = 10 V 60 VGS = 6 V 40 20 RqJC = 1.18 °C/W 25 50 75 100 1 10 100 1000 Figure 10. IPEAK vs. Time in Avalanche 120 80 0.1 tAV, Time in Avalanche (ms) Figure 9. Safe Operating Area ID, Drain Current (A) 0.6 VSD, Source−to−Drain Voltage (V) Figure 7. Gate−to−Source Voltage vs. Total Charge 0 0.4 125 10000 1000 100 10 0.00001 150 0.0001 0.001 0.01 0.1 TC, Case Temperature (°C) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Maximum Drain Current vs. Case Temperature www.onsemi.com 5 1 FDMS4D0N12C Normalized Thermal Impedance, ZqJC TYPICAL CHARACTERISTICS (continued) 10 1 0.1 DUTY CYCLE − DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 −5 10 10 −4 −3 −2 10 10 t, Rectangular Pulse Duration (sec) Figure 13. Transient Thermal Response Curve www.onsemi.com 6 10 −1 10 0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PQFN8 5X6, 1.27P CASE 483AF ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13656G PQFN8 5X6, 1.27P DATE 06 JUL 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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