FDMS5360L_F085

FDMS5360L-F085 N-Channel Power Trench® MOSFET FDMS5360L-F085 N-Channel Power Trench® MOSFET 60V, 60A, 8.5mΩ Features „ Typ rDS(on) = 6.5mΩ at VGS = 10V, ID = 60A „ Typ Qg(tot) = 64nC at VGS = 10V, ID = 60A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Integrated Starter/alternator „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Ratings 60 Units V ±20 V Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 60 Pulsed Drain Current TC = 25°C See Figure4 Single Pulse Avalanche Energy (Note 2) 115 A mJ Power Dissipation 150 W Derate above 25oC 1 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient -55 to + 175 oC 1 oC/W 50 oC/W (Note 3) Package Marking and Ordering Information Device Marking FDMS5360L Device FDMS5360L-F085 Package Power 56 Reel Size 13” Tape Width 12mm Quantity 3000 units Notes: 1: Current is limited by junction temperature. 2: Starting TJ = 25°C, L = 0.1mH, IAS = 48A, VDD = 60V during inductor charging and VDD = 0V during time in avalanche 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ©2013 Semiconductor Components Industries, LLC. September-2017, Rev. 3 Publication Order Number: FDMS5360L-F085/D Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 60V, VGS = 0V 60 - - V - - 1 μA TJ = 25oC TJ = 175oC(Note 4) VGS = ±20V - - 1 mA - - ±100 nA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 60A, VGS= 10V ID = 60A, VGS= 4.5V 1.0 1.9 3.0 V TJ = 25oC - 6.5 8.5 mΩ - 14.3 17.5 mΩ TJ = 25oC - 8.7 10.5 mΩ - 18.2 21.6 mΩ TJ = 175oC(Note 4) TJ = 175oC(Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge VDS = 30V, VGS = 0V, f = 1MHz VDD = 48V ID = 60A - 3695 - pF - 295 - pF - 155 - pF - 1.3 - Ω - 64 72 nC - 6.5 7.8 nC - 13.8 - nC - 13.5 - nC Switching Characteristics ton Turn-On Time - - 40 ns td(on) Turn-On Delay Time - 22 - ns tr Rise Time - 14 - ns td(off) Turn-Off Delay Time - 79 - ns tf Fall Time - 16 - ns toff Turn-Off Time - - 104 ns VDD = 30V, ID = 60A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage ISD = 60A, VGS = 0V - - 1.25 V Trr Reverse Recovery Time - 36 41 ns Qrr Reverse Recovery Charge IF = 60A, dISD/dt = 100A/μs, VDD=48V - 36 45 nC Notes: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 FDMS5360L-F085 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 0.8 0.6 0.4 0.2 0.0 VGS = 10V 70 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 80 1.2 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 0 175 Figure 1. Normalized Power Dissipation vs Case Temperature 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 IDM, PEAK CURRENT (A) VGS = 10V 100 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK 10 CURRENT AS FOLLOWS: I = I2 175 - TC 150 SINGLE PULSE 1 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 0 10 1 10 FDMS5360L-F085 N-Channel Power Trench® MOSFET Typical Characteristics 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1ms 1 10ms SINGLE PULSE TJ = MAX RATED TC = 25oC 100ms 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 200 Figure 5. Forward Bias Safe Operating Area VDD = 5V 120 TJ = 175oC 80 TJ = 25oC 40 o TJ = -55 C 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 100 1000 VGS = 0 V 10 TJ = 175 oC TJ = 25 oC 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 200 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 Figure 8. Forward Diode Characteristics 4V 80μs PULSE WIDTH Tj=25oC 0 0 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 100 50 100 0.01 0.0 6 VGS 10V Top 8V 6V 5V 4.5V 4V Bottom 150 0.1 Figure 6. Unclamped Inductive Switching Capability 300 200 0.01 NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515 Figure 7. Transfer Characteristics 250 STARTING TJ = 150oC 300 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 160 STARTING TJ = 25oC 10 tAV, TIME IN AVALANCHE (ms) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 200 100 1 0.001 0.1 1 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics 5 VGS 10V Top 8V 6V 5V 4.5V 4V Bottom 160 120 4V 80 40 0 80μs PULSE WIDTH Tj=175oC 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 4 5 FDMS5360L-F085 N-Channel Power Trench® MOSFET Typical Characteristics rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID =60A PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 40 30 20 TJ = 175oC 10 0 2 TJ = 25oC 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. Rdson vs Gate Voltage NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 2.0 1.6 1.2 0.8 ID = 60A VGS = 10V 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 1.2 VGS = VDS ID = 250μA 1.2 ID = 1mA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX Figure 12. Normalized Rdson vs Junction Temperature 1.5 1.1 0.9 1.0 0.6 0.9 0.3 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) Ciss Coss 100 Crss 10 f = 1MHz VGS = 0V 1 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs Drain to Source Voltage -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 10000 1000 0.8 -80 200 Figure 13. Normalized Gate Threshold Voltage vs Temperature CAPACITANCE (pF) 2.4 10 ID = 60A 8 VDD = 30V VDD = 24V VDD = 36V 6 4 2 0 0 10 20 30 40 50 Qg, GATE CHARGE(nC) 60 70 Figure 16. Gate Charge vs Gate to Source Voltage www.onsemi.com 5 FDMS5360L-F085 N-Channel Power Trench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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