FDMS7694

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Other names and brands may be claimed as the property of others. N-Channel PowerTrench® MOSFET 30 V, 9.5 mΩ Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance. „ Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 13.2 A „ Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced engineered for soft recovery body diode General Description Applications technology, „ IMVP Vcore Switching for Notebook „ MSL1 robust package design „ VRM Vcore Switching for Desktop and server „ 100% UIL tested „ OringFET / Load Switching „ RoHS Compliant „ DC-DC Conversion Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 20 44 (Note 1a) -Pulsed A 13.2 50 Single Pulse Avalanche Energy EAS Ratings 30 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 21 mJ 27 (Note 1a) Operating and Storage Junction Temperature Range W 2.5 -55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 4.5 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS7694 Device FDMS7694 ©2011 Semiconductor Components Industries, LLC. October-2017, Rev.3 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units Publication Order Number: FDMS7694/D FDMS7694 N-Channel PowerTrench® MOSFET FDMS7694 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 30 V 16 mV/°C 1 μA 100 nA 3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 13.2 A 7.6 9.5 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 10.5 A 11.1 14.5 VGS = 10 V, ID = 13.2 A, TJ = 125 °C 10.6 13.3 gFS Forward Transconductance 1.0 VDS = 5 V, ID = 13.2 A 2.0 -6 mV/°C 55 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 1060 1410 pF 353 470 pF 36 55 pF 0.8 1.6 Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VDD = 15 V, ID = 13.2 A, VGS = 10 V, RGEN = 6 Ω Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge 8.4 17 ns 2 10 ns ns 18 33 1.6 10 ns VGS = 0 V to 10 V 15 22 nC VGS = 0 V to 4.5 V VDD = 15 V, ID = 13.2 A 7 10 3.3 nC 2.0 nC nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.76 1.1 VGS = 0 V, IS = 13.2 A (Note 2) 0.85 1.2 IF = 13.2 A, di/dt = 100 A/μs IF = 13.2 A, di/dt = 300 A/μs V 23 37 ns 7 14 nC 18 33 ns 14 26 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 21 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 20 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. www.onsemi.com 2 FDMS7694 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 ID, DRAIN CURRENT (A) VGS = 4.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 VGS = 4 V 40 30 VGS = 5 V VGS = 10 V 20 VGS = 3.5 V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3.5 V 4 VGS = 4 V 3 VGS = 4.5 V 2 VGS = 5 V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0 1 2 3 4 5 0 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 50 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 30 1.6 ID = 13.2 A VGS = 10 V 1.5 rDS(on), DRAIN TO 1.4 1.3 1.2 1.1 1.0 0.9 0.8 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 25 ID = 13.2 A 20 15 TJ = 125 oC 10 TJ = 25 oC 5 -50 -25 0 25 50 75 2 100 125 150 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 50 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VGS = 10 V 40 VDS = 5 V 30 TJ = 150 oC 20 TJ = 25 oC 10 TJ = -55 oC 0 1 2 3 4 5 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.2 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.2 FDMS7694 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2000 ID = 13.2 A VDD = 15 V 1000 Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V VDD = 10 V 6 4 2 Coss 100 f = 1 MHz VGS = 0 V 0 0 4 8 12 10 0.1 16 Figure 7. Gate Charge Characteristics 10 30 Figure 8. Capacitance vs Drain to Source Voltage 20 50 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC TJ = 100 oC TJ = 125 oC VGS = 10 V 40 30 VGS = 4.5 V 20 Limited by Package 10 o RθJC = 4.5 C/W 1 0.01 0.1 1 10 0 25 100 50 100 125 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 100us 1 10 ms 1ms THIS AREA IS LIMITED BY rDS(on) 100 ms 1s SINGLE PULSE TJ = MAX RATED 0.1 10 s RθJA = 125 oC/W DC o TA = 25 C 0.1 1 10 100200 P(PK), PEAK TRANSIENT POWER (W) 500 10 0.01 0.01 75 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss VGS = 10 V SINGLE PULSE RθJA = 125 oC/W 100 TA = 25 oC 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 1000 FDMS7694 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 5 100 1000 FDMS7694 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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