N-Channel PowerTrench® MOSFET
40 V, 248 A, 1.1 mΩ
Features
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed ang body
diode reverse recovery performance.
Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 32 A
Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 27 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced
engineered for soft recovery
body
diode
General Description
Applications
technology,
OringFET / Load Switching
MSL1 robust package design
Synchronous Rectification
100% UIL tested
DC-DC Conversion
RoHS Compliant
Bottom
Top
Pin 1
S
S
Pin 1
D
D
D
S
G
D
S
D
S
D
S
D
G
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
TC = 25 °C
-Continuous
TC = 100 °C
-Continuous
TA = 25 °C
-Pulsed
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Ratings
40
Units
V
±20
V
(Note 5)
248
(Note 5)
157
(Note 1a)
36
(Note 4)
943
(Note 3)
264
A
mJ
104
(Note 1a)
Operating and Storage Junction Temperature Range
W
2.5
-55 to +150
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
1.2
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS8320L
Device
FDMS8320L
©2012 Semiconductor Componets Industries, LLC.
August-2017, Rev.2
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
Publication Order Number:
FDMS8320L/D
FDMS8320L N-Channel PowerTrench® MOSFET
FDMS8320L
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 32 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
100
nA
3.0
V
40
V
21
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-6
VGS = 10 V, ID = 32 A
0.8
1.1
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 27 A
1.0
1.5
VGS = 10 V, ID = 32 A, TJ = 125 °C
1.2
1.7
VDS = 5 V, ID = 32 A
206
gFS
Forward Transconductance
1.0
1.7
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 20 V, VGS = 0 V,
f = 1 MHz
0.1
8350
11110
pF
2840
3780
pF
169
295
pF
1.3
2.6
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
17
30
ns
tr
Rise Time
19
35
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 20 V, ID = 32 A,
VGS = 10 V, RGEN = 6 Ω
68
110
ns
17
30
ns
VGS = 0 V to 10 V
121
170
nC
VGS = 0 V to 4.5 V VDD = 20 V,
ID = 32 A
58
117
nC
19.2
nC
16.5
nC
Drain-Source Diode Characteristics
Is
Diode Continuous Forward Current
TC = 25 °C
248
A
Is, pulse
Diode Pulse Current
TC = 25 °C
943
A
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.1 A
(Note 2)
0.65
1.1
VGS = 0 V, IS = 32 A
(Note 2)
0.74
1.2
68
108
ns
59
95
nC
IF = 32 A, di/dt = 100 A/μs
IF = 32 A, di/dt = 300 A/μs
V
53
85
ns
104
167
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 42 A, VDD = 36 V, VGS = 10 V.
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
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2
FDMS8320L N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted.
120
ID, DRAIN CURRENT (A)
5
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
VGS = 3 V
90
60
30
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
0.2
0.4
0.6
0.8
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
150
4
VGS = 3 V
3
VGS = 3.5 V
2
1
VGS = 4 V
0
1.0
0
30
Figure 1. On Region Characteristics
90
120
150
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
1.6
5
ID = 32 A
VGS = 10 V
1.5
rDS(on), DRAIN TO
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
ID = 32 A
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
60
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
3
2
TJ = 125 oC
1
TJ = 25 oC
0
-50
-25
0
25
50
75
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
100 125 150
2
TJ, JUNCTION TEMPERATURE (oC)
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On-Resistance vs. Gate to
Source Voltage
1000
150
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
120
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 4.5 V
VDS = 5 V
90
TJ = 150 oC
60
TJ = 25 oC
30
TJ = -55 oC
0
1.0
1.5
2.0
2.5
3.0
3.5
VGS = 0 V
100
10
TJ = 150 oC
1
TJ = 25 oC
0.1
0.01
0.001
0
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = -55 oC
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
1.2
FDMS8320L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
30000
ID = 32 A
10000
8
Ciss
VDD = 20 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
6
VDD = 16 V
VDD = 24 V
4
Coss
1000
100
2
0
0
25
50
75
100
10
0.1
125
Figure 7. Gate Charge Characteristics
10
40
Figure 8. Capacitance vs. Drain
to Source Voltage
250
200
100
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
TJ = 25 oC
TJ = 100 oC
10
TJ = 125 oC
200
VGS = 10 V
150
VGS = 4.5 V
100
50
o
RθJC = 1.2 C/W
1
0.01
0.1
1
10
100
0
25
1000
125
150
P(PK), PEAK TRANSIENT POWER (W)
20000
SINGLE PULSE
RθJC = 1.2 oC/W
10000
100
10 us
THIS AREA IS
LIMITED BY rDS(on)
100 us
1 ms
SINGLE PULSE
TJ = MAX RATED
RθJC = 1.2 oC/W
TC = 25 oC
0.1
0.1
100
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
2000
1000
1
75
o
Figure 9. Unclamped Inductive
Switching Capability
10
50
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
Crss
f = 1 MHz
VGS = 0 V
1
10 ms
DC
CURVE BENT TO
MEASURE DATA
10
100 200
TC = 25 oC
1000
100
50
-5
10
-4
10
-3
10
-2
10
-1
10
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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4
1
FDMS8320L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
0.001
-5
10
NOTES:
SINGLE PULSE
ZθJC(t) = r(t) x RθJC
RθJC = 1.2 oC/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
-4
10
-3
10
-2
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
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5
-1
10
1
FDMS8320L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
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