FDMS8333L

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS8333L N-Channel PowerTrench® MOSFET 40 V, 76 A, 3.1 mΩ Features General Description „ Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. „ Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced engineered for soft recovery body diode technology, Applications „ MSL1 robust package design „ OringFET / Load Switching „ 100% UIL tested „ Synchronous rectification „ RoHS Compliant „ DC-DC Conversion Bottom Top Pin 1 S Pin 1 D D D S S G D S D S D S D G D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TC = 25 °C -Continuous TA = 25 °C -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Ratings 40 Units V ±20 V 76 (Note 1a) 22 (Note 4) 250 (Note 3) 216 69 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.8 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS8333L Device FDMS8333L ©2013 Fairchild Semiconductor Corporation FDMS8333L Rev. C3 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS8333L N-Channel PowerTrench® MOSFET December 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3.0 V 40 V 22 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 22 A 2.4 3.1 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 19 A 3.3 4.3 VGS = 10 V, ID = 22 A, TJ = 125 °C 3.6 4.7 VDS = 5 V, ID = 22 A 120 gFS Forward Transconductance 1.0 1.8 -6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 20 V, VGS = 0 V, f = 1 MHz 0.1 3245 4545 pF 840 1175 pF 32 55 pF 0.7 2.1 Ω Switching Characteristics td(on) Turn-On Delay Time 14 25 ns tr Rise Time 4.7 10 ns td(off) Turn-Off Delay Time 33 53 ns tf Fall Time 4.2 10 ns nC VDD = 20 V, ID = 22 A, VGS = 10 V, RGEN = 6 Ω Qg Total Gate Charge VGS = 0 V to 10 V 46 64 Qg Total Gate Charge 22 31 Qgs Gate to Source Charge VGS = 0 V to 4.5 V VDD = 20 V, ID = 22 A Qgd Gate to Drain “Miller” Charge nC 8.8 nC 5.5 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.9 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 22 A (Note 2) 0.8 1.3 IF = 22 A, di/dt = 100 A/μs V 38 61 ns 20 32 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 216 mJ is based on starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 12 A, VDD = 40 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 38 A. 4. Pulsed Id limited by junction temperature, td