FDMS8350LET40
MOSFET N‐Channel
POWERTRENCH)
40 V, 300 A, 0.85 mW
General Description
This N-Channel MV MOSFET is produced using
ON Semiconductor’s advanced POWERTRENCH process that has
been especially tailored to minimize the on−state resistance and yet
maintain superior switching performance.
Features
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VDS
RDS(ON) MAX
ID MAX
40 V
0.85 mW @ 10 V
47 A
1.2 mW @ 4.5 V
• Max RDS(on) = 0.85 mW at VGS = 10 V, ID = 47 A
• Max RDS(on) = 1.2 mW at VGS = 4.5 V, ID = 38 A
• Advanced Package and Silicon combination for Low rDS(on) and
S
High Efficiency
• MSL1 Robust Package Design
• 100% UIL Tested
• These Devices are Pb−Free and are RoHS Compliant
G
Applications
D
• Primary DC−DC MOSFET
• Secondary Synchronous Rectifier
• Load Switch
N-CHANNEL MOSFET
Top
Bottom
S
Pin 1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
VDS
Drain to Source Voltage
40
V
VGS
Gate to Source Voltage
±20
V
Drain Current:
Continuous (TC = 25°C) (Note 5)
Continuous TC = 100°C (Note 5)
Continuous, TA = 25°C (Note 1a)
Pulsed (Note 4)
300
A
ID
EAS
Single Pulse Avalanche Energy
(Note 3)
PD
Power Dissipation:
TC = 25°C
TA = 25°C (Note 1a)
TJ, TSTG
Operating and Storage Junction
Temperature Range
D
Pin 1
SS
G
D
D
D
PQFN8 5X6,
1.27P
CASE 483AG
MARKING DIAGRAM
212
49
1464
S
1176
mJ
W
125
3.33
−55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
S
S
G
$Y
&Z
&3
&K
FDMS8350LET40
D
$Y&Z&3&K
FDMS
8350LET
D
D
D
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
June, 2019 − Rev. 2
1
Publication Order Number:
FDMS8350LET40/D
FDMS8350LET40
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
°C/W
RqJC
Thermal Resistance, Junction to Case
1.2
RqJA
Thermal Resistance, Junction to Ambient (Note 1a)
45
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain to Source Breakdown Voltage
ID = 250 mA, VGS = 0 V
DBVDSS
/DTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 mA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 32 V, VGS = 0 V
1
mA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
3.0
V
BVDSS
40
V
17
mV/°C
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 mA
DVGS(th)
/DTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 mA, referenced to 25°C
Static Drain to Source On Resistance
VGS = 10 V, ID = 47 A
0.68
0.85
VGS = 4.5 V, ID = 38 A
0.96
1.2
VGS = 10 V, ID = 47 A, TJ = 150°C
1.1
1.4
VDS = 5 V, ID = 47 A
247
rDS(on)
gFS
Forward Transconductance
1.0
1.8
−6
mV/°C
mW
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
VDS = 20 V, VGS = 0 V, f = 1 MHz
11850
16590
pF
3430
4805
pF
69
100
pF
1.2
2.4
W
32
51
ns
19
34
ns
Turn-Off Delay Time
74
118
ns
Fall Time
15
27
ns
VGS = 0 V to 10 V
156
219
nC
VGS = 0 V to 4.5 V
73
102
nC
Gate Resistance
0.1
SWITCHING CHARACTERISTICS
td(on)
tr
td(off)
tf
Qg
Turn-On Delay Time
Rise Time
Total Gate Charge
VDD = 20 V, ID = 47 A, VGS = 10 V,
RGEN = 6 W
Qgs
Gate to Source Charge
VDD = 20 V, ID = 47 A
33
nC
Qgd
Gate to Drain “Miller” Charge
VDD = 20 V, ID = 47 A
16
nC
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2
FDMS8350LET40
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
VGS = 0 V, IS = 2.1 A (Note 2)
0.7
1.2
V
VGS = 0 V, IS = 47 A (Note 2)
0.8
1.3
IF = 47 A, di/dt = 100 A/ms
81
129
ns
82
131
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqJC is guaranteed
by design while RqCA is determined by the user’s board design.
NOTES:
a) 45°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b) 115°C/W when mounted on
a minimum pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2.
3.
4.
5.
Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
EAS of 1176 mJ is based on starting TJ = 25°C; L = 3 mH, IAS = 28 A, VDD = 40 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 87 A.
Pulsed Id please refer to Fig 11 SOA graph for more details.
Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
ORDERING INFORMATION
Device
Marking
Package
Reel Size
Tape Width
Quantity
FDMS8350LET40
FDMS8350LET
Power 56
13″
12 mm
3000 units
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3
FDMS8350LET40
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
320
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 4.5 V
240
VGS = 3.5 V
VGS = 4 V
160
PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX
80
VGS = 3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
15
12
VGS = 3.5 V
9
6
3
0
3.0
0
80
240
320
Figure 6. Normalized On−Resistance vs Drain
Current and Gate Voltage
20
ID = 47 A
VGS = 10 V
rDS(on), DRAIN TO
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
SOURCE ON−RESISTANCE (mW)
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
1.6
160
ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
1.8
VGS = 4.5 V VGS = 10 V
VGS = 4 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.7
PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX
VGS = 3 V
PULSE DURATION = 80m s
DUTY CYCLE = 0.5% MAX
15
ID = 47 A
10
5
TJ = 150 oC
TJ = 25 oC
0.7
−75 −50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATUREo(C)
0
0
2
4
6
8
Figure 3. On−Resistance vs Gate to Source
Voltage
320
320
IS, REVERSE DRAIN CURRENT (A)
Figure 2. Normalized On−Resistance vs Junction
Temperature
PULSE DURATION = 80m s
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
240
VDS = 5 V
TJ = 175 oC
TJ = 25 oC
160
TJ = −55oC
80
0
10
VGS, GATE TO SOURCE VOLTAGE (V)
100
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 175 oC
1
TJ = 25 oC
0.1
TJ = −55oC
0.01
0.001
0.0
012345
VGS = 0 V
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 4. Transfer Characteristics
Figure 5. Source to Drain Diode Forward Voltage
vs Source Current
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4
FDMS8350LET40
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
10
100000
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 47 A
Ciss
VDD = 15 V
CAPACITANCE (pF)
8
VDD = 20 V
6
VDD = 25 V
4
2
0
10000
Coss
1000
100
0
34
68
102
136
10
0.1
170
Figure 7. Gate Charge Characteristics
10
40
Figure 8. Capacitance vs Drain to Source Voltage
320
200
100
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg , GATE CHARGE (nC)
TJ = 25 oC
TJ = 125 oC
10
TJ = 150 oC
240
VGS = 10 V
160
VGS = 4.5 V
80
o
RqJC = 1.2 C/W
1
0.001 0.01
0.1
1
10
100
0
25
1000 10000
50
75
tAV , TIME IN AVALANCHE (ms)
100
125
150
175
TC, CASE TEMPERATURE (o C)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
6000
50000
THIS AREA IS
LIMITED BY r DS(on)
P(PK), PEAK TRANSIENT POWER (W)
1000
ID, DRAIN CURRENT (A)
Crss
f = 1 MHz
VGS = 0 V
10 m s
100
100 m s
10
1
1 ms
SINGLE PULSE
TJ = MAX RATED
RqJC = 1.2 oC/W
TC = 25 oC
0.1
0.01
0.1
10 ms
CURVE BENT TO
MEASURED DATA
1
10
100 ms/ DC
100
500
10000
SINGLE PULSE
RqJC = 1.2 oC/W
TC = 25 oC
1000
100
−5
10
−4
10
−3
10
−2
10
−1
10
1
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
FDMS8350LET40
TYPICAL CHARACTERISTICS
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
(TJ = 25°C unless otherwise noted)
2
1
0.1
0.01
0.001
−5
10
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
ZqJC(t) = r(t) x RqJC
RqJC = 1.2 oC/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1 / t2
SINGLE PULSE
−4
10
−3
−2
10
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Case Transient Thermal Response Curve
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6
−1
10
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AG
ISSUE A
DOCUMENT NUMBER:
DESCRIPTION:
98AON13657G
PQFN8 5X6, 1.27P
DATE 25 JUN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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