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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDMS8570S
N-Channel PowerTrench® SyncFETTM
25 V, 60 A, 2.8 mΩ
Features
General Description
Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A
This N-Channel SyncFETTM is produced using Fairchild
Semiconductor’s
advanced
PowerTrench®
process.
Advancements in both silicon and package technologies have
been combined to offer the lowest rDS(on) while maintaining
excellent switching performance by extremely low Junction-toAmbient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A
High performance technology for extremely low rDS(on)
SyncFETTM Schottky Body Diode
RoHS Compliant
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
Bottom
Top
Pin 1
S
D
D
D
S
S
G
D
5
4 G
D
6
3
D
7
2 S
D
8
1
S
S
D
Power 56
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous (Package limited)
TC = 25 °C
-Continuous
TA = 25 °C
TJ, TSTG
12
V
(Note 1a)
24
A
100
Single Pulse Avalanche Energy
PD
Units
V
60
-Pulsed
EAS
Ratings
25
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
45
48
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
TC = 25 °C
RθJA
Thermal Resistance, Junction to Ambient
2.6
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
10OD
Device
FDMS8570S
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D3
Package
Power 56
1
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS8570S N-Channel PowerTrench® SyncFETTM
November 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
25
V
ID = 10 mA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
500
μA
IGSS
Gate to Source Leakage Current
VGS = +12 V/-8 V, VDS = 0 V
±100
nA
2.2
V
23
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1 mA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 10 mA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
1.1
1.5
-3
mV/°C
VGS = 10 V, ID = 24 A
2.1
2.8
VGS = 4.5 V, ID = 22 A
2.4
3.1
VGS = 10 V, ID = 24 A, TJ = 125 °C
2.9
3.9
VDS = 5 V, ID = 24 A
215
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
2825
pF
662
pF
94
pF
0.8
Ω
11
ns
4
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 24 A,
VGS = 10 V, RGEN = 6 Ω
33
ns
3
ns
VGS = 0 V to 10 V
42
nC
VGS = 0 V to 4.5 V VDD = 13 V,
ID = 24 A
22
nC
6.4
nC
4.4
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2 A
(Note 2)
0.6
0.8
VGS = 0 V, IS = 24 A
(Note 2)
0.8
1.2
IF = 24 A, di/dt = 300 A/μs
V
22
ns
19
nC
NOTES:
1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 125 °C/W when mounted on
a minimum pad of 2 oz
copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 45 mJ is based on starting TJ = 25 °C, L = 0.4 mH, IAS = 15 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 23.8 A.
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D3
2
www.fairchildsemi.com
FDMS8570S N-Channel PowerTrench® SyncFETTM
Electrical Characteristics TJ = 25 °C unless otherwise noted
100
4.5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 10V
VGS = 4.5 V
80
VGS = 3.5 V
VGS = 3 V
60
VGS = 2.5 V
40
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
0.3
0.6
0.9
1.2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 2.5 V
3.6
2.7
VGS = 3 V
1.8
0.9
VGS = 10 V
0.5
1.5
0
20
Figure 1. On Region Characteristics
rDS(on), DRAIN TO
1.3
1.2
1.1
1.0
0.9
0.8
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.4
100
7
ID = 28 A
6
5
4
TJ = 125 oC
3
2
1
100 125 150
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
8
TJ = 25 oC
2
3
TJ, JUNCTION TEMPERATURE (oC)
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
100
100
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80
ID, DRAIN CURRENT (A)
80
9
ID = 28 A
VGS = 10 V
-50
60
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
0.7
-75
40
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.5
VGS = 3.5 V
VGS = 4.5 V
VDS = 5 V
60
TJ = 25 oC
TJ = 150 oC
40
20
TJ = -55 oC
0
1.0
1.5
2.0
2.5
10
TJ = 150 oC
TJ = 25 oC
1
TJ = -55 oC
0.1
0.01
0.0
3.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D3
VGS = 0 V
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMS8570S N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted
10000
ID = 28 A
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
6
VDD = 13 V
VDD = 10 V
4
VDD = 15 V
Ciss
1000
Coss
100
Crss
2
f = 1 MHz
VGS = 0 V
0
0
10
20
30
40
10
0.1
50
1
Figure 7. Gate Charge Characteristics
120
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
1
0.001
0.01
0.1
1
100
VGS = 10 V
80
VGS = 4.5 V
60
40
Limited by Package
20
10
100
o
RθJC = 2.6 C/W
0
25
1000
50
125
150
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
200
100
10000
P(PK), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
100
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
100 us
10
1 ms
10 ms
100 ms
THIS AREA IS
LIMITED BY rDS(on)
1s
SINGLE PULSE
TJ = MAX RATED
10 s
RθJA = 125 oC/W
DC
o
TA = 25 C
0.01
0.01
75
o
tAV, TIME IN AVALANCHE (ms)
0.1
30
Figure 8. Capacitance vs Drain
to Source Voltage
100
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
TA = 25 oC
100
10
1
0.1
-4
10
-3
10
-2
10
-1
10
0
10
1
10
100
1000
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D3
SINGLE PULSE
Rθ JA = 125 oC/W
1000
4
www.fairchildsemi.com
FDMS8570S N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
SINGLE PULSE
1E-3
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 125 C/W
1E-4
-4
10
-3
10
-2
10
-1
0
10
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D3
5
www.fairchildsemi.com
FDMS8570S N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted
SyncFETTM Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8570S.
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
30
IDSS, REVERSE LEAKAGE CURRENT (A)
-2
25
CURRENT (A)
20
di/dt = 300 A/μs
15
10
5
0
-5
0
50
100
150
200
250
TIME (ns)
TJ = 125 oC
-3
10
TJ = 100 oC
-4
10
-5
10
TJ = 25 oC
-6
10
0
5
10
15
20
25
VDS, REVERSE VOLTAGE (V)
Figure 15. SyncFETTM body diode reverse
leakage versus drain-source voltage
Figure 14. FDMS8570S SyncFETTM body
diode reverse recovery characteristic
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D3
10
6
www.fairchildsemi.com
FDMS8570S N-Channel PowerTrench® SyncFETTM
Typical Characteristics (continued)
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
5.10
PKG
CL
8
5.10
3.91
A
SEE
DETAIL B
B
5
1.27
8
7
6
5
0.77
4.52
PKG CL
5.85
5.65
6.15
3.75
6.61
KEEP OUT
AREA
1.27
1
4
1
TOP VIEW
2
3
4
0.61
1.27
3.81
OPTIONAL DRAFT
ANGLE MAY APPEAR
ON FOUR SIDES
OF THE PACKAGE
SEE
DETAIL C
5.00
4.80
LAND PATTERN
RECOMMENDATION
0.35
0.15
0.10 C
0.05
0.00
SIDE VIEW
8X
0.08 C
5.20
4.80
1.10
0.90
3.81
0.35
0.15
DETAIL C
SCALE: 2:1
1.27
0.51 (8X)
0.31
(0.34)
0.10
1
2
3
C A B
4
0.76
0.51
(0.52)
6.25
5.90
3.48+0.30
-0.10
(0.50)
(0.30)
(2X)
8
0.20+0.10
-0.15 (8X)
7
6
3.96
3.61
BOTTOM VIEW
0.30
0.05
5
C
SEATING
PLANE
DETAIL B
SCALE: 2:1
NOTES: UNLESS OTHERWISE SPECIFIED
A. PACKAGE STANDARD REFERENCE: JEDEC MO-240,
ISSUE A, VAR. AA,.
B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH.
MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009.
E. IT IS RECOMMENDED TO HAVE NO TRACES OR
VIAS WITHIN THE KEEP OUT AREA.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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