Is Now Part of
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDMS86101
N-Channel PowerTrench® MOSFET
100 V, 60 A, 8 mΩ
Features
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
MSL1 robust package design
Application
100% UIL tested
DC-DC Conversion
100% Rg tested
RoHS Compliant
Bottom
Top
S
D
D
D
Pin 1
S
S
G
D
S
D
S
D
S
D
G
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
TC = 25 °C
-Continuous
TA = 25 °C
ID
TJ, TSTG
±20
V
(Note 1a)
12.4
A
200
Single Pulse Avalanche Energy
PD
Units
V
60
-Pulsed
EAS
Ratings
100
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
173
104
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1.2
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS86101
Device
FDMS86101
©2013 Fairchild Semiconductor Corporation
FDMS86101 Rev.1.3
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS86101 N-Channel PowerTrench® MOSFET
April 2016
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
800
nA
IGSS
Gate to Source Leakage Current, Forward
VGS = ±20 V, VDS = 0 V
100
nA
4.0
V
100
V
66
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-9
VGS = 10 V, ID = 13 A
6.3
8
rDS(on)
Static Drain to Source On Resistance
VGS = 6 V, ID = 9.5 A
8.4
13.5
VGS = 10 V, ID = 13 A, TJ = 125 °C
10.9
14
gFS
Forward Transconductance
2.0
VDS = 10 V, ID = 13 A
2.9
mV/°C
45
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
0.1
2255
3000
pF
460
610
pF
30
45
pF
1.0
3.0
Ω
15
27
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
VDD = 50 V, ID = 13 A,
VGS = 10 V, RGEN = 6 Ω
11
20
ns
27
44
ns
7
13
ns
Total Gate Charge
VGS = 0 V to 10 V
39
55
nC
VGS = 0 V to 5 V
22
31
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 50 V,
ID = 13 A
nC
9.5
nC
10.8
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.1 A
(Note 2)
0.7
1.2
VGS = 0 V, IS = 13 A
(Note 2)
0.8
1.3
IF = 13 A, di/dt = 100 A/μs
V
56
90
ns
61
98
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 173 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 34 A, VDD = 75 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 49 A.
©2013 Fairchild Semiconductor Corporation
FDMS86101 Rev.1.3
2
www.fairchildsemi.com
FDMS86101 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
5
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
150
ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
200
VGS = 6 V
VGS = 5.5 V
100
VGS = 5 V
50
VGS = 4.5 V
0
0
1
2
3
4
VGS = 4.5 V
4
VGS = 5 V
3
VGS = 5.5 V
2
VGS = 6 V
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
5
0
50
100
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
200
40
ID = 13 A
VGS = 10 V
1.8
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
150
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 13 A
30
20
TJ = 125 oC
10
TJ = 25 oC
0
100 125 150
4
TJ, JUNCTION TEMPERATURE (oC)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
100
IS, REVERSE DRAIN CURRENT (A)
200
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
150
ID, DRAIN CURRENT (A)
VGS = 10 V
VDS = 5 V
100
TJ = 150 oC
50
TJ = 25 oC
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
TJ = -55 oC
0
1
2
3
4
5
6
7
0.01
0.0
8
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2013 Fairchild Semiconductor Corporation
FDMS86101 Rev.1.3
3
1.2
www.fairchildsemi.com
FDMS86101 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
10000
ID = 13 A
VDD = 50 V
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 75 V
VDD = 25 V
6
4
1000
Coss
100
Crss
2
f = 1 MHz
VGS = 0 V
10
0.1
0
0
10
20
30
40
Qg, GATE CHARGE (nC)
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
90
100
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
o
TJ = 25 oC
10
TJ = 100
oC
TJ = 125 oC
RθJC = 1.2 C/W
75
60
VGS = 10 V
45
Limited by Package
30
VGS = 6 V
15
1
0.001
0.01
0.1
1
10
0
25
100
50
P(PK), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
100
10
1 ms
10 ms
100 ms
THIS AREA IS
LIMITED BY rDS(on)
1s
SINGLE PULSE
TJ = MAX RATED
10 s
DC
RθJA = 125 oC/W
0.01
TA = 25 oC
0.001
0.01
0.1
1
10
100
500
150
2000
1000
VGS = 10 V
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
100
10
1
0.5
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2013 Fairchild Semiconductor Corporation
FDMS86101 Rev.1.3
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
500
0.1
100
o
Figure 9. Unclamped Inductive
Switching Capability
1
75
Tc, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS86101 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
0.001
0.0005
-3
10
o
RθJA = 125 C/W
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDMS86101 Rev.1.3
5
www.fairchildsemi.com
FDMS86101 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
5 .2 0
4 .80
PKG
CL
8
5 .10
3.9 1
A
S EE
DETAIL B
B
5
0.64
8
7
6
1 .27
5
0.77
4.52
6.25
5.90
PKG CL
5 .8 5
5 .6 5
3.75
6 .6 1
KEEP O UT
AREA
1 .2 7
1
4
1
TO P V IEW
2
3
4
0.61
1 .2 7
3.8 1
OPTIONAL DRAFT
ANG LE MAY AP PE AR
ON FOUR SIDES
OF THE PACKA GE
S EE
DETAIL C
5 .0 0
4 .80
LAN D PA TTE RN
REC OM MEND ATIO N
0 .3 5
0 .1 5
0 .10 C
0 .05
0 .00
S IDE V IEW
0 .0 8 C
0 .3 5
0 .1 5
1 .10
0 .9 0
DE TAIL C
3.8 1
SCALE : 2 :1
1 .27
0.5 1 ( 8X)
0.3 1
( 0.34 )
0.10
1
2
3
C A B
4
0.7 6
0.4 4
(0 .52)
3.7 8
3.3 8
(0 .50)
(3.40 )
0.30
0.06
8X
(0 .30)
4.2 2
3.99
C
SE ATING
PLANE
DE TAIL B
SCALE: 2:1
N OTES: UNLESS OTHERWISE SPECIFIED
A. PACKAG E STAND ARD RE FERENCE: JEDEC M O- 240 ,
ISS UE A, VAR. AA, DATED O CTOBER 2 00 2.
B. DIMENSIONS DO N OT INCLUDE BURRS OR MO LD FL AS H.
MO LD FLASH O R BURRS DOE S NOT EXCEE D 0.10 MM.
C . AL L DIMEN SIONS ARE IN MIL LIMETERS.
D . DIMENSIONING AND TOL ER ANCING PER ASME Y1 4.5M- 199 4.
E. IT IS RECOMMENDE D TO HAVE NO TRACES O R
VIA S WITHIN TH E KEEP OUT ARE A.
F. DRAW ING FIL E NA ME: PQFN0 8AREV8
(2X )
8
7
6
3 .9 6
3 .6 1
5
0.64
0.34
B O TTO M VIE W
©2013 Fairchild Semiconductor Corporation
FDMS86101 Rev.1.3
6
www.fairchildsemi.com
FDMS86101 N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
AccuPower™
AttitudeEngine™
Awinda®
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
MotionGrid®
MTi®
MTx®
MVN®
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
®*
®
tm
Power Supply WebDesigner™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
Xsens™
仙童 ®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I77
©2013 Fairchild Semiconductor Corporation
FDMS86101 Rev.1.3
7
www.fairchildsemi.com
FDMS86101 N-Channel Power Trench® MOSFET
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