FDMS86101DC

MOSFET - N-Channel, POWERTRENCH), DUAL COOL) 56 Shielded Gate 100 V, 60 A, 7.5 mW FDMS86101DC www.onsemi.com General Description This N−Channel MOSFET is produced using Fairchild Semiconductor’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. ELECTRICAL CONNECTION S D S D S D G D Features • • • • • • • N-Channel MOSFET Shielded Gate MOSFET Technology DUAL COOL Top Side Cooling PQFN package Max rDS(on) = 7.5 mW at VGS = 10 V, ID = 14.5 A Max rDS(on) = 12 mW at VGS = 6 V, ID = 11.5 A High performance technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant D D D D Pin 1 G S S Top S Pin 1 Bottom DFN8 5.1x6.15 (Dual Cool 56) CASE 506EG Typical Applications • Primary DC−DC MOSFET • Secondary Synchronous Rectifier • Load Switch MARKING DIAGRAM XXXXXX A Y WW ZZ = Device Code = Assy Location = Year Code = Work Week Code = Assy Lot Code ORDERING INFORMATION See detailed ordering, marking and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 February, 2020 − Rev. 2 1 Publication Order Number: FDMS86101DC/D FDMS86101DC PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Shipping† 86101 FDMS86101DC UDFN8 13” 12 mm 3000 Units/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Ratings Units VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current 60 A −Continuous TC = 25°C −Continuous TA = 25°C 14.5 (Note 1a) 200 −Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation TC = 25°C Power Dissipation TA = 25°C TJ, TSTG (Note 3) 216 mJ 125 W 3.2 (Note 1a) −55 to +150 Operating and Storage Junction Temperature Range °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V Breakdown Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 mA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA BVDSS DBV DSS DT J 100 V 70 mV/°C ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA DV GS(th) DT J Gate to Source Threshold Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 14.5 A gFS Forward Transconductance 2 2.7 4 −10 6 7.5 VGS = 6 V, ID = 11.5 A 8.3 12 VGS = 10 V, ID = 14.5 A, TJ = 125°C 10 13 44 VDD = 10 V, ID = 14.5 A V mV/°C mW S DYNAMIC CHARACTERISTICS VDS = 50 V, VGS = 0 V, f = 1 MHz 2354 3135 pF Output Capacitance 467 625 pF CRSS Reverse Transfer Capacitance 23 35 pF RG Gate Resistance 1.4 3 W CISS Input Capacitance COSS 0.1 www.onsemi.com 2 FDMS86101DC ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Units 14 25 ns 8.2 17 ns SWITCHING CHARACTERISTICS VDD = 50 V, ID = 14.5 A, VGS = 10 V, RGEN = 6 W td(ON) Turn*On Delay Time tr Rise Time tD(OFF) Turn*Off Delay Time 25 40 ns tf Fall Time 5.5 11 ns Qg(TOT) Total Gate Charge 31 44 nC 18 25 nC VGS = 0 V to 10 V VGS = 0 V to 5 V Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain ”Miller” Charge VDD = 50 V, ID = 14.5 A 8.3 nC 7 nC DRAIN−SOURCE DIODE CHARACTERISTICS VSD trr Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.7 A (Note 2) 0.71 1.2 VGS = 0 V, IS = 14.5 A (Note 2) 0.78 1.3 54 87 ns 62 99 nC Reverse Recovery Time Qrr IF = 14.5 A, di/dt = 100 A/ms Reverse Recovery Charge V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. THERMAL CHARACTERISTICS Symbol Parameter Ratings Units °C/W RqJC Thermal Resistance, Junction to Case (Top Source) 2.3 RqJC Thermal Resistance, Junction to Case (Bottom Drain) 1.0 RqJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RqJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RqJA Thermal Resistance, Junction to Ambient (Note 1c) 27 RqJA Thermal Resistance, Junction to Ambient (Note 1d) 34 RqJA Thermal Resistance, Junction to Ambient (Note 1e) 16 RqJA Thermal Resistance, Junction to Ambient (Note 1f) 19 RqJA Thermal Resistance, Junction to Ambient (Note 1g) 26 RqJA Thermal Resistance, Junction to Ambient (Note 1h) 61 RqJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RqJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RqJA Thermal Resistance, Junction to Ambient (Note 1k) 11 RqJA Thermal Resistance, Junction to Ambient (Note 1l) 13 www.onsemi.com 3 FDMS86101DC NOTES: 1. RqJA is determined with the device mounted on a FR−4 board using a specified pad of 2 oz copper as shown below. RqJC is guaranteed by design while RqCA is determined by the user’s board design. b) 81°C/W when mounted on a minimum pad of 2 oz copper. a) 38°C/W when mounted on a 1 in2 pad of 2 oz copper. SS SF DS DF G SS SF DS DF G c) Still air, 20.9×10.4×12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d) Still air, 20.9×10.4×12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper e) Still air, 45.2×41.4×11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper f) Still air, 45.2×41.4×11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper g) .200FPM Airflow, No Heat Sink, 1 in2 pad of 2 oz copper h) .200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i) .200FPM Airflow, 20.9×10.4×12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j) .200FPM Airflow, 20.9×10.4×12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper k) .200FPM Airflow, 45.2×41.4×11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper l) .200FPM Airflow, 45.2×41.4×11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. 3. Starting TJ = 25_C; N−ch: L = 0.3 mH, IAS = 38 A, VDD = 90 V, VGS = 10 V. TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) VGS = 10 V 5 VGS = 8 V VGS = 7 V NORMALIZED DRAIN TO SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 200 VGS = 6 V 150 100 VGS = 5 V 50 PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics VGS = 5 V 4 VGS = 6 V 3 2 VGS = 7 V 1 0 PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX 0 VGS = 8 V 50 100 ID, DRAIN CURRENT (A) VGS = 10 V 150 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage www.onsemi.com 4 200 FDMS86101DC TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 2.2 25 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 2.0 rDS(on) , DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 ID = 14.5 A SOURCE ON−RESISTANCE(mW) ID = 14.5 A VGS = 10 V 20 15 TJ = 125 oC 10 5 0 0.6 −75 −50 −25 0 25 50 75 100 125 150 () TJ, JUNCTION TEMPERATURE oC TJ = 25 oC 4 5 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VDS = 5 V 100 0 TJ = 150 oC TJ = 25 oC TJ = −55oC 2 3 4 5 6 7 200 100 8 9 10 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = −55oC 0.01 0.001 0.0 8 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current 10 5000 ID = 14.5 A Ciss VDD = 25 V 8 VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 7 Figure 4. On-Resistance vs. Gate to Source Voltage 200 50 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs. Junction Temperature 150 PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX 6 VDD = 75 V 4 1000 Coss 100 2 0 f = 1 MHz VGS = 0 V 0 8 16 24 10 0.1 32 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage www.onsemi.com 5 100 FDMS86101DC 90 10 TJ = 100 oC TJ = 125 oC 75 60 VGS = 10 V 45 30 Limited by Package VGS = 6 V 15 o RqJC = 1.0 C/W 1 0.001 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 25 oC 0.01 0.1 1 10 0 25 100 300 75 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 2000 100 1000 1 ms 10 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 0.1 1s RqJA = 81 oC/W 10 s TA = 25 oC 0.01 0.01 0.1 DC 1 10 100 500 SINGLE PULSE RqJA = 81 oC/W TA = 25 oC 100 10 1 −3 10 −2 −1 10 10 Figure 11. Forward Bias Safe Operating Area 2 1 0.1 1 100 10 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) NORMALIZED THERMAL IMPEDANCE, ZqJA 100 TC, CASE TEMPERATURE (C) 300 1 50 tAV, TIME IN AVALANCHE (ms) P(PK), PEAK TRANSIENT POWER (W) IAS, AVALANCHE CURRENT (A) 100 Figure 12. Single Pulse Maximum Power Dissipation DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZqJA x R qJA + TA SINGLE PULSE o RqJA = 81 C/W 0.001 −3 10 −2 10 −1 10 11 0 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Case Transient Thermal Response Curve POWERTRENCH and DUAL COOL are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5x6.15, 1.27P, DUAL COOL CASE 506EG ISSUE D DATE 25 AUG 2020 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXX ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ DOCUMENT NUMBER: DESCRIPTION: XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code 98AON84257G *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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