DATA SHEET
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MOSFET – P-Channel,
POWERTRENCH)
BVDSS
RDS(ON) MAX
ID MAX
−100 V
22 mW @ −10 V
−50 A
-100 V, -50 A, 22 mW
Top
FDMS86163P
Bottom
S
General Description
D
This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to
minimize the on−state resistance and yet maintain superior switching
performance.
D
Power 56
PQFN8
CASE 483AE
Features
D
S
Pin 1
S
G
D
MARKING DIAGRAM
• Max rDS(on) = 22 mW at VGS = −10 V, ID = −7.9 A
• Max rDS(on) = 30 mW at VGS = −6 V, ID = −5.9 A
• Very Low RDS−on Mid Voltage P−Channel Silicon Technology
$Y&Z&3&K
FDMS
86163P
Optimised for Low Qg
• This Product is Optimised for Fast Switching Applications
As Well As Load Switch Applications
• 100% UIL Tested
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
$Y
= onsemi Logo
&Z
= Assembly Location
&3
= 3−Digit Date Code
&K
= Lot Code
FDMS86163P = Specific Device Code
Compliant
Applications
• Active Clamp Switch
• Load Switch
PIN CONNECTION
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
Parameter
VDS
−100
V
Gate−to−Source Voltage
VGS
±25
V
ID
−50
−7.9
−100
A
Single Pulse Avalanche Energy (Note 3)
EAS
486
mJ
Power Dissipation
PD
104
2.5
W
TJ, TSTG
−55 to
+150
°C
Drain Current −Continuous TC = 25°C
−Continuous TA = 25°C (Note 1a)
−Pulsed (Note 4)
TC = 25°C
TA = 25°C (Note1a)
Operating and Storage Junction Temperature
Range
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
S 1
8 D
S 2
7 D
S 3
6 D
G 4
5 D
ORDERING INFORMATION
Device
Package
Shipping†
FDMS86163P
PQFN−8
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
October, 2021 − Rev. 3
1
Publication Order Number:
FDMS86163P/D
FDMS86163P
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
°C/W
RqJC
Thermal Resistance, Junction to Case
1.2
RqJA
Thermal Resistance Junction to Ambient (Note 1a)
50
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
−100
−
−
V
OFF CHARACTERISTICS
Drain to Source Breakdown Voltage
ID = −250 mA, VGS = 0 V
DBVDSS/
DTJ
Breakdown Voltage Temperature
Coefficient
ID = −250 mA, Referenced to 25°C
−
−59
−
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = −80 V, VGS = 0 V
−
−
−1
mA
IGSS
Gate to Source Leakage Current
VGS = ±25 V, VDS = 0 V
−
−
±100
nA
BVDSS
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = −250 mA
−2
−2.8
−4
V
DVGS(th)/
DTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = −250 mA, Referenced to 25°C
−
6.2
−
mV/°C
Static Drain to Source On Resistance
VGS = −10 V, ID = −7.9 A
−
17.8
22
mW
VGS = −6 V, ID = −5.9 A
−
21.3
30
VGS = −10 V, ID = −7.9 A, TJ = 125°C
−
29
36
VDS = −10 V, ID = −7.9 A
−
29
−
S
VDS = −50 V, VGS = 0 V, f = 1 MHz
−
3070
4085
pF
rDS(on)
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
−
501
670
Crss
Reverse Transfer Capacitance
−
21
35
0.1
2.6
5.3
W
−
17
30
ns
−
8.8
18
Rg
Gate Resistance
SWITCHING CHARACTERISTICS
td(on)
tr
td(off)
tf
Turn−On Delay
Rise Time
VDD = −50 V, ID = −7.9 A,
VGS = −10 V, RGEN = 6 W
Turn−Off Delay
−
33
53
Fall Time
−
6.9
14
−
42
59
−
26
37
−
11.8
−
−
7.1
−
VDD = −50 V,
ID = −7.9 A
Qg
Total Gate Charge
VGS = 0 V to −10 V
Qg
Total Gate Charge
VGS = 0 V to −6 V
Qgs
Gate to Source Gate Charge
VDD = −50 V, ID = −7.9 A
Qgd
Gate to Drain “Miller” Charge
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2
nC
FDMS86163P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
Source to Drain Diode Forward
Voltage
VGS = 0 V, IS = −7.9 A (Note 2)
−
−0.81
−1.3
VGS = 0 V, IS = −2 A (Note 2)
−
−0.75
−1.2
trr
Reverse Recovery Time
IF = −7.9 A, di/dt = 100 A/ms
−
63
102
ns
Qrr
Reverse Recovery Charge
−
132
210
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed
by design while RqCA is determined by the user’s board design.
b) 50°C/W when mounted on
a minimum pad of 2 oz copper
G
DF
DS
SF
SS
G
DF
DS
SF
SS
a) 50°C/W when mounted on
a 1 in2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting TJ = 25°C; P−ch: L = 3 mH, IAS = −18 A, VDD = −100 V, VGS = −10 V. 100% test at L = 0.1 mH, IAS = −58 A.
4. Pulse Id refers to Figure 11. Forward Bias Safe Operation Area.
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3
FDMS86163P
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
VGS = −6 V
VGS = −10 V
80
VGS = −5.5 V
60
VGS = −5 V
40
20
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% Max
VGS = −4.5 V
0
0
1
2
3
4
NORMALIZED DRAIN TO SOURCE
ON−RESISTANCE
−ID, DRAIN CURRENT (A)
100
4
VGS = −4.5 V
3
VGS = −5.5 V
2
VGS = −6 V
1
0
5
0
20
40
rDS(on), DRAIN TO SOURCE
ON−RESISTANCE (mW)
NORMALIZED DRAIN TO SOURCE
ON−RESISTANCE
80
ID = −7.9 A
VGS = −10 V
1.6
1.4
1.2
1.0
0.8
0.6
25
50
75
100
60
ID = −7.9 A
40
TJ = 125°C
20
0
125 150
TJ = 25°C
3
−IS, REVERSE DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
VDS = −5 V
60
TJ = 150°C
TJ = 25°C
20
0
TJ = −55°C
2
3
4
5
6
6
8
7
9
10
Figure 4. On−Resistance vs. Gate to
Source Voltage
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% Max
40
5
4
−VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
80
100
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% Max
TJ, JUNCTION TEMPERATURE (°C)
100
80
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.0
0
60
−ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
0.4
−75 −50 −25
VGS = −10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% Max
−VDS, DRAIN TO SOURCE VOLTAGE (V)
1.8
VGS = −5 V
7
100
VGS = 0 V
10
TJ = 150°C
1
TJ = 25°C
0.1
0.01
TJ = −55°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
−VGS, GATE TO SOURCE VOLTAGE (V)
−VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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4
1.2
FDMS86163P
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
10000
−VGS, GATE TO SOURCE VOLTAGE (V)
10
ID = −7.9 A
Ciss
VDD = −50 V
VDD = −75 V
VDD = −25 V
6
CAPACITANCE (pF)
8
4
1000
Coss
100
2
0
0
10
20
30
40
10
0.1
50
1
Figure 7. Gate Charge Characteristics
100
Figure 8. Capacitance vs. Drain to Source Voltage
100
60
RqJC = 1.2°C/W
50
TJ = 25°C
−ID, DRAIN CURRENT (A)
−IAS, AVALANCHE CURRENT A)
10
−VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
TJ = 100°C
10
TJ = 125°C
1
0.001 0.01
0.1
1
10
100
40
VGS = −10 V
30
VGS = −6 V
20
10
0
25
1000
50
tAV, TIME IN AVALANCHE (ms)
10 ms
100 ms
10
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RqJC = 1.2°C/W
TC = 25°C
1
0.1
1
1 ms
10 ms
CURVE BENT TO
MEASURED DATA
10
100
125
150
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
DC
100
P(PK), PEAK TRANSIENT POWER (W)
,
500
100
75
TC, CASE TEMPERATURE (°C)
Figure 9. Unclamped Inductive Switching
Capability
−ID, DRAIN CURRENT (A)
Crss
f = 1 MHz
VGS = 0 V
200
20000
SINGLE PULSE
RqJC = 1.2°C/W
TC = 25°C
10000
1000
100
50
10−5
−VDS, DRAIN TO SOURCE VOLTAGE (V)
10−4
10−3
10−2
10−1
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum Power
Dissipation
Figure 11. Forward Bias Safe Operating Area
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5
1
FDMS86163P
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
2
1
0.1
DUTY CYCLE−DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
PDM
t1
0.01
0.005
10−5
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZqJC x RqJC + TC
SINGLE PULSE
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Junction−to−Case Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE C
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
DATE 21 JAN 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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