FDMS86322

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 60 A, 7.65 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. „ Shielded Gate MOSFET Technology „ Max rDS(on) = 7.65 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 7.2 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design Application „ 100% UIL tested „ DC-DC Conversion „ RoHS Compliant Bottom Top Pin 1 S D D D S S G D S D S D S D G D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG ±20 V (Note 1a) 13 A 200 Single Pulse Avalanche Energy PD Units V 60 -Pulsed EAS Ratings 80 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 135 104 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.2 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS86322 Device FDMS86322 ©2010 Fairchild Semiconductor Corporation FDMS86322 Rev.C3 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET October 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 800 nA IGSS Gate to Source Leakage Current, Forward VGS = ±20 V, VDS = 0 V 100 nA 4.0 V 80 V 66 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -9 VGS = 10 V, ID = 13 A 6.1 7.65 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 7.2 A 8.2 12 VGS = 10 V, ID = 13 A, TJ = 125 °C 10.7 14 gFS Forward Transconductance 2.0 VDS = 10 V, ID = 13 A 2.9 mV/°C 45 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 2255 3000 pF 460 610 pF 30 45 pF Ω 1.0 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg 15 27 11 20 ns ns 27 44 ns VDD = 50 V, ID = 13 A, VGS = 10 V, RGEN = 6 Ω 7 13 ns Total Gate Charge VGS = 0 V to 10 V 39 55 nC VGS = 0 V to 5 V 22 31 Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 13 A nC 9.5 nC 10.8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 13 A (Note 2) 0.8 1.3 IF = 13 A, di/dt = 100 A/μs V 56 90 ns 61 98 nC Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 30 A, VDD = 75 V, VGS = 10 V ©2010 Fairchild Semiconductor Corporation FDMS86322 Rev.C3 2 www.fairchildsemi.com FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 200 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 5 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 150 VGS = 6 V VGS = 5.5 V 100 VGS = 5 V 50 VGS = 4.5 V 0 0 1 2 3 4 VGS = 4.5 V 4 VGS = 5 V 3 VGS = 5.5 V 2 VGS = 6 V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 5 0 50 100 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 200 40 ID = 13 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 150 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 13 A 30 20 TJ = 125 oC 10 TJ = 25 oC 0 100 125 150 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 200 IS, REVERSE DRAIN CURRENT (A) 100 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 150 ID, DRAIN CURRENT (A) VGS = 10 V VDS = 5 V 100 TJ = 150 oC TJ = 25 oC 50 TJ = -55 oC 2 3 4 5 6 7 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.0 0 1 VGS = 0 V 8 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2010 Fairchild Semiconductor Corporation FDMS86322 Rev.C3 3 1.2 www.fairchildsemi.com FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 13 A VDD = 50 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V VDD = 25 V 6 4 Coss 1000 100 Crss 2 f = 1 MHz VGS = 0 V 10 0.1 0 0 10 20 30 40 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics 80 90 ID, DRAIN CURRENT (A) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 75 60 VGS = 10 V 45 Limited by Package 30 VGS = 6 V 15 o RθJC = 1.2 C/W 1 0.001 0.01 0.1 1 10 0 25 100 50 P(PK), PEAK TRANSIENT POWER (W) THIS AREA IS LIMITED BY rDS(on) 10 1 ms 0.1 SINGLE PULSE TJ = MAX RATED Rθ JA = 125 o C/W o TA = 25 C 0.01 0.01 10 ms 100 ms 1s CURVE BENT TO MEASURED DATA 0.1 1 10 10 s DC 100 300 VDS, DRAIN to SOURCE VOLTAGE (V) 150 2000 1000 VGS = 10 V SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 100 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMS86322 Rev.C3 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 500 1 100 o Figure 9. Unclamped Inductive Switching Capability 100 75 Tc, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) I D , DRAIN CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 100 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 0.001 0.0005 -3 10 o RθJA = 125 C/W -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMS86322 Rev.C3 5 www.fairchildsemi.com FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted PQFN8 5X6, 1.27P CASE 483AE ISSUE A 5.10 PKG CL 8 5.10 3.91 A SEE DETAIL B B 5 1.27 8 7 6 5 0.77 4.52 PKG CL 5.85 5.65 6.15 3.75 6.61 KEEP OUT AREA 1.27 1 4 1 TOP VIEW 2 3 4 0.61 1.27 3.81 OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE SEE DETAIL C 5.00 4.80 LAND PATTERN RECOMMENDATION 0.35 0.15 0.10 C 0.05 0.00 SIDE VIEW 8X 0.08 C 5.20 4.80 1.10 0.90 3.81 0.35 0.15 DETAIL C SCALE: 2:1 1.27 0.51 (8X) 0.31 (0.34) 0.10 1 2 3 C A B 4 0.76 0.51 (0.52) 6.25 5.90 3.48+0.30 -0.10 (0.50) (0.30) (2X) 8 0.20+0.10 -0.15 (8X) 7 6 3.96 3.61 BOTTOM VIEW 0.30 0.05 5 C SEATING PLANE DETAIL B SCALE: 2:1 NOTES: UNLESS OTHERWISE SPECIFIED A. PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA,. B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E. IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com