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FDMS86350ET80
N-Channel PowerTrench® MOSFET
80 V, 198 A, 2.4 mΩ
Features
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Extended TJ rating to 175°C
Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A
Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Applications
Primary MOSFET
MSL1 robust package design
Synchronous Rectifier
100% UIL tested
Load Switch
RoHS Compliant
Motor Control Switch
Bottom
Top
S
Pin 1
D
D
D
S
S
Pin 1
S
D
G
S
D
S
D
G
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
TC = 25 °C
-Continuous
TC = 100 °C
-Continuous
TA = 25 °C
-Pulsed
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Ratings
80
Units
V
±20
V
(Note 5)
198
(Note 5)
140
(Note 1a)
25
(Note 4)
693
(Note 3)
864
187
(Note 1a)
Operating and Storage Junction Temperature Range
3.3
-55 to +175
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
0.8
(Note 1a)
45
°C/W
Package Marking and Ordering Information
Device Marking
FDMS86350ET
Device
FDMS86350ET80
©2015 Fairchild Semiconductor Corporation
FDMS86350ET80 Rev. C
Package
Power 56
Reel Size
13 ’’
1
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS86350ET80 N-Channel PowerTrench® MOSFET
January 2015
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 64 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4.5
V
80
V
45
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 25 A
2.0
2.4
rDS(on)
Static Drain to Source On Resistance
VGS = 8 V, ID = 22 A
2.5
3.2
VGS = 10 V, ID = 25 A, TJ = 125 °C
3.1
3.8
VDS = 5 V, ID = 25 A
70
gFS
Forward Transconductance
2.5
3.8
-12
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 40 V, VGS = 0 V,
f = 1 MHz
8030
pF
1370
pF
31
0.1
pF
1.1
3
Ω
50
80
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
VDD = 40 V, ID = 25 A,
VGS = 10 V, RGEN = 6 Ω
34
55
ns
40
65
ns
11
20
ns
Total Gate Charge
VGS = 0 V to 10 V
110
155
nC
VGS = 0 V to 8 V
90
127
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 40 V,
ID = 25 A
nC
46
nC
23
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.1 A
(Note 2)
0.71
1.2
VGS = 0 V, IS = 25 A
(Note 2)
0.79
1.3
IF = 25 A, di/dt = 100 A/μs
V
63
101
ns
62
100
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design.
a. 45 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 115 °C/W when mounted on a
minimum pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 864 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 24 A, VDD = 80 V, VGS = 10 V, 100% test at L = 0.1 mH, IAS = 74 A.
4. Pulse Id please refer to Fig.11 SOA curve for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2015 Fairchild Semiconductor Corporation
FDMS86350ET80 Rev. C
2
www.fairchildsemi.com
FDMS86350ET80 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
300
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
250
ID, DRAIN CURRENT (A)
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 8 V
200
VGS = 7 V
150
VGS = 6.5 V
100
VGS = 6 V
50
0
0
1
2
3
4
VGS = 6 V
4
VGS = 6.5 V
3
VGS = 7 V
2
VGS = 8 V
1
0
5
0
50
100
150
200
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
300
10
ID = 25 A
VGS = 10 V
1.8
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
250
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
8
ID = 25 A
6
TJ = 150 oC
4
2
TJ = 25 oC
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
0
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
300
5
IS, REVERSE DRAIN CURRENT (A)
VDS = 5 V
200
TJ = 175
oC
150
TJ = 25 oC
100
50
TJ = -55 oC
0
3
4
5
6
7
6
7
8
9
300
100
VGS = 0 V
10
TJ = 175 oC
1
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
8
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2015 Fairchild Semiconductor Corporation
FDMS86350ET80 Rev. C
10
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
250
ID, DRAIN CURRENT (A)
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3
1.2
www.fairchildsemi.com
FDMS86350ET80 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE (V)
10
10000
Ciss
VDD = 40 V
ID = 25 A
CAPACITANCE (pF)
8
VDD = 50 V
VDD = 30 V
6
4
Coss
1000
100
2
f = 1 MHz
VGS = 0 V
0
0
20
40
60
80
100
120
1
10
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
200
ID, DRAIN CURRENT (A)
100
IAS, AVALANCHE CURRENT (A)
Crss
10
0.1
TJ = 25 oC
10
TJ = 100 oC
TJ = 150 oC
160
VGS = 10 V
120
VGS = 8 V
80
40
o
RθJC = 0.8 C/W
1
0.01
0.1
1
10
100
0
25
1000
50
75
100
125
150
175
o
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
1000
P(PK), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
20000
SINGLE PULSE
RθJC = 0.8 oC/W
10000
100
10
10 μs
THIS AREA IS
LIMITED BY rDS(on)
100 μs
SINGLE PULSE
TJ = MAX RATED
1 ms
1
RθJC = 0.8 oC/W
TC = 25 oC
0.1
0.1
10 ms
CURVE BENT TO
MEASURED DATA
1
10
DC
100
300
VDS, DRAIN to SOURCE VOLTAGE (V)
TC = 25 oC
1000
100
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
©2015 Fairchild Semiconductor Corporation
FDMS86350ET80 Rev. C
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS86350ET80 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJC
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.1
t2
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 0.8 °C/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
-5
10
-4
10
-3
-2
10
10
-1
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2015 Fairchild Semiconductor Corporation
FDMS86350ET80 Rev. C
5
www.fairchildsemi.com
FDMS86350ET80 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
5.10
4.90
A
3.81
PKG
CL
8
4.42
B
5
8
7
6
5
1.14
KEEP OUT AREA
3.65
6.25
5.90
PKG CL
6.61
4.79
1.27
1
PIN #1
IDICATOR
4
TOP VIEW
1
2
3
4
1.27
SEE
DETAIL A
0.61
3.81
5.10
LAND PATTERN
RECOMMENDATION
SIDE VIEW
3.81
0.10
1.27
(0.38)
1
C A B
0.47 (8X)
0.37
4
(0.35)
0.65
0.55
PIN #1
INDICATOR
4.66
4.46
8
5
4.33
4.13
0.70
BOTTOM VIEW
0.10 C
1.10
0.90
0.08 C
C
0.25
0.15
SCALE: 2:1
0.05
0.00
SEATING
PLANE
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC MO-240, ISSUE A, VAR. AA,
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) IT IS RECOMMENDED TO HAVE NO TRACES
OR VIAS WITHIN THE KEEP OUT AREA.
F) DRAWING FILE NAME: PQFN08JREV3.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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