DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
80 V, 50 A, 13.4 mW
V(BR)DSS
RDS(ON) MAX
ID MAX
80 V
13.4 mW @ 10 V
50 A
ELECTRICAL CONNECTION
FDMS86380-F085
Features
•
•
•
•
•
Typ RDS(on) = 11.3 mW at VGS = 10 V; ID = 50 A
Typ Qg(tot) = 20 nC at VGS = 10 V; ID = 50 A
UIS Capability
AEC−Q101 Qualified and PPAP Capable
This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
N−Channel MOSFET
Bottom
SS
Top
Applications
•
•
•
•
•
•
•
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter/Alternator
Distributed Power Architectures and VRM
Primary Switch for 12 V Systems
D
D
Pin 1
S
S
DD
PQFN8
CASE 483BJ
MARKING DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
80
V
Gate−to−Source Voltage
VGS
±20
V
ID
50
A
Continuous Drain Current
(VGS = 10 V) (Note 1)
TC = 25°C
Pulsed Drain Current
TC = 25°C
See
Figure 4
Single Pulse Avalanche Energy (Note 2)
EAS
16
mJ
Power Dissipation
PD
75
W
0.5
W/°C
TJ, TSTG
−55 to
+175
°C
Thermal Resistance (Junction−to−Case)
RqJC
2
°C/W
Maximum Thermal Resistance
(Junction−to−Ambient) (Note 3)
RqJA
50
°C/W
Derate above 25°C
Operating and Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Current is limited by bondwire configuration.
2. Starting Tj = 25°C, L = 20 mH, IAS = 40 A, VDD = 80 V during inductor charging
and VDD = 0 V during time in avalanche.
3. RqJA is the sum of the junction−to−case and case−to−ambient thermal
resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RqJC is guaranteed by design while RqJA
is determined by the user’s board design. The maximum rating presented
here is based on mounting on a 1 in2 pad of 2 oz copper.
© Semiconductor Components Industries, LLC, 2016
October, 2021 − Rev. 3
1
ON AYWWWL
FDMS
86380
A
WL
Y
WW
FDMS86380
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping†
FDMS86380−F085
PQFN8
(Power 56)
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
FDMS86380−F085/D
FDMS86380−F085
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BVDSS
IDSS
IGSS
Drain−to−Source Breakdown Voltage
ID = 250 mA, VGS = 0 V
80
−
−
V
Drain−to−Source Leakage Current
VDS = 80 V,
VGS = 0 V
TJ = 25°C
−
−
1
mA
TJ = 175°C (Note 4)
−
−
1
mA
−
−
±100
nA
2.0
3.0
4.0
V
TJ = 25°C
−
11.3
13.4
mW
TJ = 175°C (Note 4)
−
25.3
30.0
−
1440
−
Gate−to−Source Leakage Current
VGS = ±20 V
ON CHARACTERISTICS
VGS(th)
Gate−to−Source Threshold Voltage
VGS = VDS, ID = 250 mA
RDS(on)
Drain−to−Source On−Resistance
ID = 50 A
VGS = 10 V
DYNAMIC CHARACTERISTICS
VDS = 40 V, VGS = 0 V, f = 1 MHz
pF
Ciss
Input Capacitance
Coss
Output Capacitance
−
300
−
Crss
Reverse Transfer Capacitance
−
14
−
−
2.0
−
W
−
20
30
nC
−
2.7
−
Rg
Gate Resistance
f = 1 MHz
Qg(tot)
Total Gate Charge
VGS = 0 to 10 V
Qg(th)
Threshold Gate Charge
VGS = 0 to 2 V
VDD = 64 V,
ID = 50 A
Qgs
Gate−to−Source Gate Charge
−
8.8
−
Qgd
Gate−to−Drain “Miller” Charge
−
4.4
−
−
−
31
−
13
−
Rise Time
−
8
−
Turn−Off Delay
−
15
−
Fall Time
−
5
−
Turn−Off Time
−
−
30
ISD = 50 A, VGS = 0 V
−
−
1.25
ISD = 25 A, VGS = 0 V
−
−
1.2
IF = 50 A, dISD/dt = 100 A/ms, VDD = 64 V
−
37
55
ns
−
23
35
nC
SWITCHING CHARACTERISTICS
ton
Turn−On Time
td(on)
Turn−On Delay
tr
td(off)
tf
toff
VDD = 40 V, ID = 50 A,
VGS = 10 V, RGEN = 6 W
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
Source−to−Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production
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2
FDMS86380−F085
1.2
60
1.0
50
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
TYPICAL CHARACTERISTICS
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
40
30
20
10
0
175
25
50
TC, CASE TEMPERATURE (°C)
ZqJC, NORMALIZED THERMAL IMPEDANCE
75
100
125
150
175
200
TC, CASE TEMPERATURE (°C)
Figure 1. Normalized Power Dissipation vs.
Case Temperature
2
VGS = 10 V
Current Limited
by Silicon
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
DUTY CYCLE − DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
t1
Single Pulse
0.01
10−5
10−4
t2
DUTY CYCLE, D = t1/t2
Peak TJ = PDM x ZqJC x RqJC + TC
10−3
10−2
10−1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
IDM, PEAK CURRENT (A)
10000
VGS = 10 V
TC = 25°C
For temperatures above 25°C
derate peak current as follows:
ƪǸ
1000
ƫ
175 * T C
I + I 25
150
100
Single Pulse
10
10−5
10−4
10−3
10−2
t, RECTANGULAR PULSE DURATION (s)
Figure 4. Peak Current Capability
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3
10−1
100
101
FDMS86380−F085
TYPICAL CHARACTERISTICS (continued)
100
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
2000
1000
100
10
100 ms
1 Operation in this area may
be limited by RDS(on)
1 ms
10 ms
100 ms
TC = 25°C
TJ = Max Rated
Single Pulse
0.1
0.01
0.1
1
10
10
Starting TJ = 25°C
Starting TJ = 150°C
1
0.001
500
100
If R = 0
tAV=(L)(IAS)/(1.3*Rated BVDSS − VDD)
If R ≠ 0
tAV=(L/R)In[(IAS*R)/(1.3*Rated BVDSS− VDD)+1]
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 6. Unclamped Inductive Switching Capability
200
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
VDD = 5 V
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
150
90
60
TJ = 175°C
30
TJ = −55°C
TJ = 25°C
0
3
4
5
7
6
8
9
10
10
TJ = 175°C
0
VGS
15 V Top
10 V
8V
7V
6V
5.5 V
5 V Bottom
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
150
60
30
0
0
1
2
3
0.4
0.6
0.8
1.0
1.4
1.2
1.6
Figure 8. Forward Diode Characteristics
150
90
0.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
120
TJ = 25°C
1
0.1
11
VGS = 0 V
100
VGS, GATE TO SOURCE VOLTAGE (V)
250 ms Pulse Width
TJ = 25°C
100
(Note: Refer to onsemi Applications Notes AN7514 and
AN7515)
Figure 5. Forward Bias Safe Operating Area
120
0.1
10
0.01
1
tAV, TIME IN AVALANCHE (ms)
120
90
60
30
0
5
4
VGS
15 V Top
10 V
8V
7V
6V
5.5 V
5 V Bottom
250 ms Pulse Width
TJ = 175°C
0
1
2
3
4
VDS, DRAIN−SOURCE VOLTAGE (V)
VDS, DRAIN−SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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4
5
FDMS86380−F085
TYPICAL CHARACTERISTICS (continued)
2.5
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
100
ID = 50 A
80
60
40
TJ = 175°C
20
0
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
NORMALIZED DRAIN−SOURCE
ON−RESISTANCE
RDS(on), DRAIN TO SOURCE
ON−RESISTANCE (mW)
120
2.0
1.5
1.0
ID = 50 A
VGS = 10 V
TJ = 25°C
6
7
0.5
−80
10
9
8
0.9
0.7
0.5
40
0
80
120
160
200
1.05
1.00
0.95
0.90
−80
VGS, GATE−TO−SOURCE VOLTAGE (V)
CAPACITANCE (pF)
Ciss
Coss
10
1
0.1
Crss
1
80
40
120
160
200
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10000
f = 1 MHz
VGS = 0 V
0
−40
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
100
200
ID = 5 mA
TJ, JUNCTION TEMPERATURE (°C)
1000
160
1.10
VGS = VDS
ID = 250 mA
NORMALIZED DRAIN−TO−SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE THRESHOLD VOLTAGE
1.3
−40
120
Figure 12. Normalized RDS(on) vs. Junction
Temperature
Figure 11. RDS(on) vs. Gate Voltage
0.3
−80
80
40
TJ, JUNCTION TEMPERATURE (°C)
VGS, GATE TO SOURCE VOLTAGE (V)
1.1
0
−40
10
10
ID = 50 A
VDD = 40 V
8
VDD = 48 V
VDD = 32 V
6
4
2
0
0
100
4
8
12
16
20
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 16. Gate Charge vs. Gate to Source
Voltage
Figure 15. Capacitance vs. Drain to Source
Voltage
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5
24
FDMS86380−F085
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483BJ
ISSUE C
DOCUMENT NUMBER:
DESCRIPTION:
98AON13688G
PQFN8 5X6, 1.27P
DATE 13 DEC 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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