FDMS86500L

FDMS86500L MOSFET, N‐Channel, POWERTRENCH) 60 V, 158 A, 2.5 mW General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Features • Max rDS(on) = 2.5 mW at VGS = 10 V, ID = 25 A • Max rDS(on) = 3.7 mW at VGS = 4.5 V, ID = 20 A • Advanced Package and Silicon combination for low rDS(on) and high • • • • efficiency Next generation enhanced body diode technology, engineered for soft recovery MSL1 robust package design 100% UIL tested RoHS Compliant www.onsemi.com S D S D S D G D N-Channel MOSFET D Applications Ratings Unit VDS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V ID Drain Current: − Continuous TC = 25°C (Note 5) − Continuous TC = 100°C (Note 5) − Continuous TA = 25°C (Note 1a) − Pulsed (Note 4) 158 100 25 799 EAS Single Pulse Avalanche Energy (Note 3) 240 PD Power Dissipation: TC = 25°C TA = 25°C (Note 1a) 104 2.5 TJ, TSTG Operating and Storage Junction Temperature Range D S G D MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter D Pin 1 S Power 56 (PQFN8) CASE 483AE • Primary Switch in Isolated DC−DC • Synchronous Rectifier • Load Switch Symbol Bottom S Top A mJ W S S S G $Y &Z &3 &K FDMS86500L D $Y&Z&3&K FDMS 86500L D D D = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION −55 to +150 °C See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2015 November, 2018 − Rev. 2 1 Publication Order Number: FDMS86500L/D FDMS86500L PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Quantity FDMS86500L FDMS86500L Power 56 (PQFN8) (Pb-Free / Halogen Free) 3000/Tape&Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL CHARACTERISTICS Symbol Parameter Value Unit °C/W RqJC Thermal Resistance, Junction to Case 1.2 RqJA Thermal Resistance, Junction to Ambient (Note 1a) 50 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V DBVDSS /DTJ Breakdown Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 mA IGSS Gate to Source Leakage Current, Forward VGS = ±20 V, VDS = 0 V ±100 nA 3 V BVDSS 60 V 30 mV/°C ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA DVGS(th) /DTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C −7 Static Drain to Source On Resistance VGS = 10 V, ID = 25 A 2.1 2.5 VGS = 4.5 V, ID = 20 A 2.9 3.7 VGS = 10 V, ID = 25 A, TJ = 125°C 3.1 3.7 VDS = 5 V, ID = 20 A 95 rDS(on) gFS Forward Transconductance 1 1.8 mV/°C mW S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg VDS = 30 V, VGS = 0 V, f = 1 MHz 9420 12530 pF 1470 1955 pF 50 80 pF 1.1 3.0 W 27 43 ns 16 28 ns Turn-Off Delay Time 63 100 ns Fall Time 7.8 16 ns VGS = 0 V to 10 V, VDD = 30 V, ID = 25 A 117 165 nC VGS = 0 V to 4.5 V, VDD = 30 V, ID = 25 A 54 108 nC Gate Resistance f = 1MHz 0.1 SWITCHING CHARACTERISTICS td(on) tr td(off) tf Qg Turn-On Delay Time Rise Time Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 30 V, ID = 25 A, VGS = 10 V, RGEN = 6 W VDD = 30 V, ID = 25 A www.onsemi.com 2 26.6 nC 11.5 nC FDMS86500L ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) Symbol Parameter Test Condition Min Typ Max Unit DRAIN-SOURCE DIODE CHARACTERISTICS Is Is,pulse VSD Continuous Drain to Source Diode Forward Current TC = 25°C 80 A Pulse Drain to Source Diode Forward Current TC = 25°C 799 A Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.68 1.2 V VGS = 0 V, IS = 25 A (Note 2) 0.79 1.3 54 87 ns 42 67 nC 46 73 ns 84 134 nC trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 25 A, di/dt = 100 A/ms IF = 25 A, di/dt = 300 A/ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqCA is determined by the user’s board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. EAS of 220 mJ is based on starting TJ = 25°C, L = 0.3 mH, IAS = 40 A, VDD = 54 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 66 A. Pulsed Id please refer to Figure 11 SOA graph for more details. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 350 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON−RESISTANCE ID , DRAIN CURRENT (A) 2. 3. 4. 5. VGS = 5 V 280 VGS = 4.5 V VGS = 4 V 210 140 VGS = 3.5 V 70 0 PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX 0 1 2 3 4 5 VDS , DRAIN TO SOURCE VOLTAGE (V) 5 VGS = 3.5 V 4 VGS = 4 V 3 VGS = 4.5 V 2 1 0 PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX 0 70 140 VGS = 5 V 210 VGS = 10 V 280 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage www.onsemi.com 3 350 FDMS86500L TYPICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted) 10 ID = 25 A VGS = 10 V 1.6 r DS(on) , DRAIN TO SOURCE ON−RESISTANCE(mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 1.8 1.4 1.2 1.0 0.8 0.6 −75 −50 −25 0 25 50 ID = 25 A PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX 8 6 TJ = 125 oC 4 2 TJ = 25 oC 0 2 75 100 125 150 4 TJ, JUNCTION TEMPERATURE (5C) I D , DRAIN CURRENT (A) PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX 280 VDS = 5 V 210 140 TJ = 150 oC TJ = 25 oC 70 TJ = −55oC 0 1 2 3 4 VGS = 0 V 100 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = −55oC 0.001 0.0 5 0.2 0.4 0.6 0.8 1.0 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current 50000 10 ID = 25 A VDD = 20 V 10000 8 CAPACITANCE (pF) VGS , GATE TO SOURCE VOLTAGE (V) 10 500 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 30 V 6 VDD = 40 V 4 Ciss Coss 1000 100 2 0 8 Figure 4. On−Resistance vs. Gate to Source Voltage I S , REVERSE DRAIN CURRENT (A) Figure 3. Normalized On Resistance vs. Junction Temperature 350 6 VGS, GATE TO SOURCE VOLTAGE (V) Crss f = 1 MHz VGS = 0 V 0 20 40 60 80 100 10 0.1 120 Qg , GATE CHARGE (nC) 1 10 V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage www.onsemi.com 4 60 FDMS86500L TYPICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted) 160 ID , DRAIN CURRENT (A) IAS , AVALANCHE CURRENT (A) 100 TJ = 25 oC TJ = 100 oC 10 TJ = 125 oC 120 VGS = 10 V 80 VGS = 4.5 V 40 o RqJC = 1.2 C/W 1 0.01 0.1 1 10 100 tAV , TIME IN AVALANCHE (ms) 0 25 1000 THIS AREA IS LIMITED BY r DS(on) 100 m s SINGLE PULSE TJ = MAX RATED 1 ms RqJC = 1.2 oC/W 0.1 0.1 TC = 25 oC 2 1 NORMALIZED THERMAL IMPEDANCE,ZsJA P(PK), PEAK TRANSIENT POWER (W) ID , DRAIN CURRENT (A) 10 m s 1 0.1 0.01 0.001 −5 10 CURVE BENT TO MEASURED DATA 1 10 100 125 150 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 1000 10 75 Tc , CASE TEMPERATURE ( oC) Figure 9. Unclamped Inductive Switching Capability 100 50 10 ms DC 100 300 20000 SINGLE PULSE RqJC = 1.2 oC/W 10000 TC = 25 oC 1000 100 10 −5 10 −4 10 −3 −2 10 −1 10 10 VDS , DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZqJC(t) = r(t) x RqJC SINGLE PULSE RqJC= 1.2 5C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 −4 10 −3 −2 10 10 t, RECTANGULAR PULSE DURATION (sec) −1 10 1 Figure 13. Transient Thermal Response Curve POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PQFN8 5X6, 1.27P CASE 483AE ISSUE B DOCUMENT NUMBER: DESCRIPTION: 98AON13655G PQFN8 5X6, 1.27P DATE 06 JUL 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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