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FDMS86569-F085 N-Channel PowerTrench® MOSFET
FDMS86569-F085
N-Channel PowerTrench® MOSFET
60 V, 65 A, 5.6 mΩ
Features
Typical RDS(on) = 4.3 mΩ at VGS = 10V, ID = 65 A
Typical Qg(tot) = 36 nC at VGS = 10V, ID = 65 A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter/Alternator
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
VDSS
Drain-to-Source Voltage
VGS
ID
EAS
PD
Parameter
Ratings
60
Units
V
±20
V
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
TC = 25°C
65
Pulsed Drain Current
TC = 25°C
See Figure 4
Single Pulse Avalanche Energy
(Note 2)
41
A
mJ
Power Dissipation
100
W
Derate Above 25oC
0.67
W/oC
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
-55 to + 175
oC
1.5
oC/W
50
oC/W
(Note 3)
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 30uH, IAS = 52A, VDD = 60V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.
Package Marking and Ordering Information
Device Marking
FDMS86569
Device
FDMS86569-F085
©2016 Semiconductor Components Industries, LLC.
August-2017, Rev. 2
Package
Power56
Reel Size
13”
1
Tape Width
12mm
Quantity
3000units
Publication Order Number:
FDMS86569-F085/D
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-to-Source Breakdown Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 60V,
VGS = 0V
60
-
-
V
-
-
1
μA
-
-
1
mA
-
-
±100
nA
TJ = 25oC
TJ = 175oC (Note 4)
VGS = ±20V
On Characteristics
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
ID = 65A,
VGS= 10V
2.0
2.8
4.0
V
-
4.3
5.6
mΩ
-
8.3
10.8
mΩ
TJ = 25oC
TJ = 175oC (Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
f = 1MHz
Qg(ToT)
Total Gate Charge
VGS = 0 to 10V
Qg(th)
Threshold Gate Charge
VGS = 0 to 2V
Qgs
Gate-to-Source Gate Charge
Qgd
Gate-to-Drain “Miller“ Charge
-
VDS = 30V, VGS = 0V,
f = 1MHz
VDD = 30V
ID = 65A
-
2560
-
pF
-
740
-
pF
-
40
-
pF
-
2.0
-
Ω
-
36
54
nC
-
4.8
-
nC
-
14
-
nC
7
-
nC
ns
Switching Characteristics
ton
Turn-On Time
-
-
36
td(on)
Turn-On Delay
-
16
-
ns
tr
Rise Time
-
11
-
ns
td(off)
Turn-Off Delay
-
23
-
ns
tf
Fall Time
-
8
-
ns
toff
Turn-Off Time
-
-
41
ns
V
VDD = 30V, ID = 65A,
VGS = 10V, RGEN = 6Ω
Drain-Source Diode Characteristics
VSD
Source-to-Drain Diode Voltage
trr
Reverse-Recovery Time
Qrr
Reverse-Recovery Charge
ISD =65A, VGS = 0V
-
-
1.25
ISD = 32.5A, VGS = 0V
-
-
1.2
V
IF = 65A, dISD/dt = 100A/μs
VDD = 48V
-
55
72
ns
-
45
59
nC
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
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2
FDMS86569-F085 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted.
120
1.0
100
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
CURRENT LIMITED
BY PACKAGE
80
60
40
20
0
175
Figure 1. Normalized Power Dissipation vs. Case
Temperature
VGS = 10V
CURRENT LIMITED
BY SILICON
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
200
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
0.1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
-5
10
-4
10
-3
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
TC = 25oC
VGS = 10V
FOR TEMPERATURES
IDM, PEAK CURRENT (A)
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
1000
175 - TC
I = I25
150
100
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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3
0
10
1
10
FDMS86569-F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
1000
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
2000
1000
100
100us
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
0.1
0.1
1ms
10ms
100ms
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
500
Figure 5. Forward Bias Safe Operating Area
TJ = 25oC
150
100
TJ = 175oC
TJ = -55oC
50
0
3
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
100
10
0.01
0.1
1
10
100
VGS = 0 V
TJ = 175 oC
TJ = 25 oC
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 8. Forward Diode Characteristics
250
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
1
0.001
VSD, BODY DIODE FORWARD VOLTAGE (V)
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
150
STARTING TJ = 150oC
Figure 6. Unclamped Inductive Switching
Capability
10
250μs PULSE WIDTH
Tj=25oC
VGS
200
10
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 7. Transfer Characteristics
250
STARTING TJ = 25oC
250
PULSE DURATION = 250μs
DUTY CYCLE = 0.5% MAX
VDD = 5V
200
100
tAV, TIME IN AVALANCHE (ms)
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
250
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
50
250μs PULSE WIDTH
Tj=175oC
200
VGS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
150
100
50
5V
5V
0
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
5
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Saturation Characteristics
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4
5
FDMS86569-F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
PULSE DURATION = 250μs
DUTY CYCLE = 0.5% MAX
40
ID = 65A
30
20
TJ = 175oC
10
0
5
TJ = 25oC
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 11. RDSON vs. Gate Voltage
PULSE DURATION = 250μs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
ID = 65A
VGS = 10V
0.5
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 12. Normalized RDSON vs. Junction
Temperature
1.10
VGS = VDS
ID = 250μA
1.1
ID = 5mA
1.05
0.9
1.00
0.7
0.95
0.5
0.3
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
Ciss
Coss
100
10
f = 1MHz
VGS = 0V
1
0.1
Crss
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 15. Capacitance vs. Drain to Source
Voltage
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
10000
1000
0.90
-80
200
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
CAPACITANCE (pF)
2.5
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.3
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
50
10
ID = 65A
8
VDD = 30V
VDD = 36V
VDD = 24V
6
4
2
0
0
5
10
15
20
25
30
Qg, GATE CHARGE(nC)
35
40
Figure 16. Gate Charge vs. Gate to Source
Voltage
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5
FDMS86569-F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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