FDMS8680

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS8680 N-Channel PowerTrench® MOSFET tm 30V, 35A, 7.0m: Features General Description „ Max rDS(on) = 7.0m:at VGS = 10V, ID = 14A The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. „ Max rDS(on) = 11.0m: at VGS = 4.5V, ID = 11.5A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency Applications „ MSL1 robust package design „ Low Side for Synchronous Buck to Power Core Processor „ RoHS Compliant „ Secondary Side Synchronous Rectifier „ Low Side Switch in POL DC/DC Converter „ Oring FET/ Load Switch Bottom Top S D D D Pin 1 S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V 35 63 (Note 1a) 14 (Note 3) 216 -Pulsed A 100 Single Pulse Avalanche Energy EAS Ratings 30 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 50 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 2.5 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS8680 Device FDMS8680 ©2009 Fairchild Semiconductor Corporation FDMS8680 Rev.C3 Package Power 56 1 Reel Size 13" Tape Width 12mm Quantity 3000units www.fairchildsemi.com FDMS8680 N-Channel PowerTrench® MOSFET October 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient 30 V ID = 250PA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 1 PA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3.0 V 24 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250PA, referenced to 25°C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 1.8 -5.7 mV/°C VGS = 10V, ID = 14A 5.5 7.0 VGS = 4.5V, ID = 11.5A 8.5 11.0 VGS = 10V, ID = 14A, TJ = 125°C 8.2 10.5 VDD = 10V, ID = 14A 72 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 1195 1590 pF 555 740 pF 95 145 pF 0.8 4.0 : Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to 10V Qg Total Gate Charge VGS = 0V to 5V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 15V, ID = 14A, VGS = 10V, RGEN = 6: VDD = 15V, ID = 14A 9 18 ns 3 10 ns 21 34 ns 2 10 ns 18 26 nC 10 14 nC 3.2 nC 2.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 14A (Note 2) IF = 14A, di/dt = 100A/Ps 0.8 1.2 V 27 44 ns 15 27 nC NOTES: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 50°C/W when mounted on a 1in2 pad of 2 oz copper. b. 125°C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 3mH, IAS = 12A, VDD = 30V, VGS = 10V. ©2009 Fairchild Semiconductor Corporation FDMS8680 Rev.C3 2 www.fairchildsemi.com FDMS8680 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 4.0 VGS = 4V 80 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 VGS = 10V VGS = 4.5V 60 VGS = 3.5V 40 VGS = 3V 20 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 0 0 1 2 3 3.0 VGS = 3.5V 2.5 VGS = 4V 2.0 VGS = 4.5V 1.5 1.0 VGS = 10V 0.5 4 0 20 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.2 1.0 0.8 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 14A 1.4 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 16 12 TJ = 125oC 8 TJ = 25oC 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 100 100 80 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT (A) 100 20 4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature VDD = 5V 60 40 TJ = 150oC 20 TJ = 25oC 0 80 24 ID = 14A VGS = 10V -50 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 0.6 -75 40 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics 1.6 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX VGS = 3V 3.5 1 2 TJ = 3 -55oC 4 VGS = 0V 10 TJ = 25oC 1 TJ = 150oC 0.1 0.01 TJ = -55oC 0.001 0.0 5 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation FDMS8680 Rev.C3 3 1.2 www.fairchildsemi.com FDMS8680 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2000 Ciss ID = 14A 1000 8 VDD = 10V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 15V 6 VDD = 20V 4 Coss 2 100 50 0.1 0 0 4 8 12 16 20 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 70 20 60 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 10 TJ = 25oC TJ = 125oC 50 40 VGS = 10V 30 20 Limited by Package 10 VGS = 4.5V o RTJC = 2.5 C/W 1 0.01 0.1 1 10 0 25 100 300 50 tAV, TIME IN AVALANCHE(ms) P(PK), PEAK TRANSIENT POWER (W) 10 1ms 0.1 10ms 100ms SINGLE PULSE TJ = MAX RATED 1s 10s RTJA = 125oC/W DC TA = 25oC 0.01 0.01 0.1 1 10 100 150 2000 1000 VGS = 10V SINGLE PULSE RTJA = 125oC/W TA = 25oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 0 10 1 2 10 10 3 10 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMS8680 Rev.C3 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100us THIS AREA IS LIMITED BY rDS(on) 100 o 200 100 1 75 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss f = 1MHz VGS = 0V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS8680 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZTJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.001 SINGLE PULSE t2 o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA RTJA = 125 C/W 0.0001 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMS8680 Rev.C3 5 www.fairchildsemi.com FDMS8680 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted PQFN8 5X6, 1.27P CASE 483AE ISSUE A 5.10 PKG CL 8 5.10 3.91 A SEE DETAIL B B 5 1.27 8 7 6 5 0.77 4.52 PKG CL 5.85 5.65 6.15 3.75 6.61 KEEP OUT AREA 1.27 1 4 1 TOP VIEW 2 3 4 0.61 1.27 3.81 OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE SEE DETAIL C 5.00 4.80 LAND PATTERN RECOMMENDATION 0.35 0.15 0.10 C 0.05 0.00 SIDE VIEW 8X 0.08 C 5.20 4.80 1.10 0.90 3.81 0.35 0.15 DETAIL C SCALE: 2:1 1.27 0.51 (8X) 0.31 (0.34) 0.10 1 2 3 C A B 4 0.76 0.51 (0.52) 6.25 5.90 3.48+0.30 -0.10 (0.50) (0.30) (2X) 8 0.20+0.10 -0.15 (8X) 7 6 3.96 3.61 BOTTOM VIEW 0.30 0.05 5 C SEATING PLANE DETAIL B SCALE: 2:1 NOTES: UNLESS OTHERWISE SPECIFIED A. PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA,. B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E. IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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