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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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FDMT80080DC
N-Channel Dual CoolTM 88 PowerTrench® MOSFET
80 V, 254 A, 1.35 m
特性
概述
最大值 rDS(on) = 1.35 m (VGS = 10 V、 ID = 36 A)
最大值 rDS(on) = 1.82 m (VGS = 8 V、 ID = 31 A)
低 rDS(on) 和高效的先进硅封装
此 N 沟道 MOSFET 采用 Fairchild 先进的 PowerTrench® 工艺生
产。先进的硅技术和 Dual CoolTM 封装技术完美融合,可在提供
最小 rDS(on) 的同时通过极低的结至环境热阻保持卓越的开关性
能。
下一代先进体二极管技术,专为软恢复设计
薄型 8x8mm MLP 封装
应用
MSL1 强健封装设计
OringFET/ 负载开关
100% 经过 UIL 测试
同步整流
符合 RoHS 标准
DC-DC 转换
引脚 1
G
引 脚
S
S
S
S
D
顶
D
D
Dual CoolTM 88
D
G
D
S
D
S
D
S
D
底
MOSFET 最大额定值 TA = 25 °C,除非另有说明。
符号
参数
额定值
80
单位
V
栅极-源极电压
±20
V
漏极电流-连续
VDS
漏极-源极电压
VGS
ID
TC = 25 °C
(注 5)
254
-连续
TC = 100°C
(注 5)
160
-连续
TA = 25 °C
(注 1a)
36
-脉冲
EAS
单脉冲雪崩能量
PD
TJ, TSTG
功耗
TC = 25 °C
功耗
TA = 25 °C
(注 4)
1453
(注 3)
1734
156
(注 1a)
3.2
-55 to +150
工作和保存结温范围
A
mJ
W
°C
热特性
RJC
结至外壳热阻
(顶部源极)
1.6
RJC
结至外壳热阻
(底部漏极)
0.8
RJA
结至环境热阻
(注 1a)
38
RJA
结至环境热阻
(注 1b)
81
RJA
结至环境热阻
(注 1i)
15
RJA
结至环境热阻
(注 1j)
21
RJA
结至环境热阻
(注 1k)
9
°C/W
封装标识与定购信息
器件封装
80080DC
©2015 飞兆半导体公司
FDMT80080DC Rev. 1.0
器件
FDMT80080DC
封装
Dual CoolTM 88
1
卷盘大小
13”
卷带宽度
13.3 mm
数量
3000 件
www.fairchildsemi.com
FDMT80080DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET
2015 年 8 月
符号
参数
测试条件
最小值
典型值
最大值
单位
关断特性
BVDSS
漏极-源极击穿电压
ID = 250 A, VGS = 0 V
BVDSS
TJ
击穿电压温度系数
ID = 250 A,参考 25 °C
IDSS
零栅极电压漏极电流
VDS = 64 V, VGS = 0 V
1
A
IGSS
栅极-源极漏电流
VGS = ±20 V, VDS = 0 V
100
nA
VGS(th)
栅极至源极阀值电压
VGS = VDS, ID = 250 A
4.0
V
VGS(th)
TJ
栅极至源极阀值电压温度系数
ID = 250 A,参考 25 °C
-12
VGS = 10 V, ID = 36 A
1.06
rDS(on)
漏极至源极静态导通电阻
VGS = 8 V, ID = 31 A
1.23
1.82
VGS = 10 V, ID = 36 A, TJ = 125 °C
1.74
2.22
VDS = 5 V, ID = 36 A
116
80
V
41
mV/°C
导通特性
gFS
正向跨导
2.0
3.1
mV/°C
1.35
m
S
动态特性
Ciss
输入电容
Coss
输出电容
Crss
反向传输电容
Rg
栅极阻抗
VDS = 40 V, VGS = 0 V,
f = 1 MHz
0.1
14800
20720
pF
2080
2915
pF
56
125
pF
1.8
4.5
67
108
ns
65
104
ns
75
120
ns
30
48
ns
195
273
nC
159
223
nC
开关特性
td(on)
导通延迟时间
tr
上升时间
td(off)
关断延迟时间
tf
下降时间
Qg(TOT)
总栅极电荷
VGS = 0 V 至 10 V
Qg(TOT)
总栅极电荷
VGS = 0 V 至 8 V
Qgs
栅极-源极电荷
Qgd
栅极-漏极 “ 米勒 ” 电荷
VDD = 40 V, ID = 36 A,
VGS = 10 V, RGEN = 6
VDD = 40 V,
ID = 36 A
69
nC
36
nC
漏极-源极二极管特性
VSD
源极-漏极二极管正向电压
trr
反向恢复时间
Qrr
反向恢复电荷
©2015 飞兆半导体公司
FDMT80080DC Rev. 1.0
VGS = 0 V, IS = 2.6 A
(注 2)
0.7
1.1
VGS = 0 V, IS = 36 A
(注 2)
0.8
1.2
IF = 36 A, di/dt = 100 A/ms
2
V
81
130
ns
88
141
nC
www.fairchildsemi.com
FDMT80080DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET
电气特性 TJ = 25 °C,除非另有说明。
RJC
结至外壳热阻
(顶部源极)
1.6
RJC
结至外壳热阻
(底部漏极)
0.8
RJA
结至环境热阻
(注 1a)
38
RJA
结至环境热阻
(注 1b)
81
RJA
结至环境热阻
(注 1c)
26
RJA
结至环境热阻
(注 1d)
34
RJA
结至环境热阻
(注 1e)
14
RJA
结至环境热阻
(注 1f)
16
RJA
结至环境热阻
(注 1g)
26
RJA
结至环境热阻
(注 1h)
60
RJA
结至环境热阻
(注 1i)
15
RJA
结至环境热阻
(注 1j)
21
RJA
结至环境热阻
(注 1k)
9
(注 1l)
11
RJA
结至环境热阻
注:
1. RJA 通过安装在 FR-4 电路板上的器件确定,该电路板使用指定的 2 oz 铜焊盘,如下图所示。 RCA 由用户的电路板设计确定
a. 38 °C/W (安装于 a 1 平方英寸
2 oz 铜焊盘)
°C/W
。
b. 81 °C/W(安装于 最小 2 oz 铜焊盘)
DS
DF
SS
SF
G
DS
DF
SS
SF
G
c. 静止空气, 20.9x10.4x12.7mm 铝质散热器, 1 平方英寸 2 oz 铜焊盘
d. 静止空气, 20.9x10.4x12.7mm 铝质散热器,最小 2 oz 铜焊盘
e. 静止空气, 45.2x41.4x11.7mm Aavid Thermalloy 器件号 10-L41B-11 散热器, 1 平方英寸 2 oz 铜焊盘
f. 静止空气, 45.2x41.4x11.7mm Aavid Thermalloy 器件号 10-L41B-11 散热器,最小 2 oz 铜焊盘
g. 200FPM 气流,无散热器, 1 平方英寸 2 oz 铜焊盘
h. 200FPM 气流,无散热器,最小 2 oz 铜焊盘
i. 200FPM 气流, 20.9x10.4x12.7mm 铝质散热器, 1 平方英寸 2 oz 铜焊盘
j. 200FPM 气流, 20.9x10.4x12.7mm 铝质散热器,最小 2 oz 铜焊盘
k. 200FPM 气流, 45.2x41.4x11.7mm Aavid Thermalloy 器件号 10-L41B-11 散热器, 1 平方英寸 2 oz 铜焊盘
l. 200FPM 气流, 45.2x41.4x11.7mm Aavid Thermalloy 器件号 10-L41B-11 散热器,最小 2 oz 铜焊盘
2. 脉冲测试:脉冲宽度:< 300 ms,占空比:< 2.0%。
3. EAS 为 1734 mJ,基于起始 TJ = 25 °C ; N-ch:L = 3 mH, IAS = 34 A、 VDD = 80 V、 VGS =10 V。 100% 经过测试 (L = 0.3 mH、 IAS = 75 A )
4. 有关脉冲编号的更多详情,请参考图 11 中的 SOA 图形。
5. 计算得到的连续电流仅限于最大结温,实际连续电流将受限于散热以及电气机械应用的电路板设计。
©2015 飞兆半导体公司
FDMT80080DC Rev. 1.0
3
www.fairchildsemi.com
FDMT80080DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET
热特性
5
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
320
VGS = 8 V
240
VGS = 6.5 V
160
VGS = 6 V
VGS = 5.5 V
80
0
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
0
1
2
3
4
VGS = 5.5 V
4
VGS = 6 V
3
VGS = 6.5 V
2
VGS = 8 V
1
0
5
0
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (m)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
6
ID = 36 A
VGS = 10 V
0.6
-75
320
ID = 36 A
4
3
TJ = 125 oC
2
1
TJ = 25 oC
0
100 125 150
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
5
4
TJ, JUNCTION TEMPERATURE (oC)
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
图 4. 导通电阻与栅极 — 源极电压的关系
图 3. 标准化导通电阻与结温的关系
320
320
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
VDS = 5 V
240
ID, DRAIN CURRENT (A)
240
图 2. 标准化导通电阻与漏极电流和栅极电压的关系
1.8
160
TJ = 150 oC
TJ = 25 oC
80
TJ = -55 oC
0
160
ID, DRAIN CURRENT (A)
图 1. 通态区域特性
1.6
VGS = 10 V
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
2
3
4
5
6
7
VGS = 0 V
10
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
0.001
0.0
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = -55 oC
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
图 6. 源极 — 漏极二极管正向电压与源极电流的关系
图 5. 传输特性
©2015 飞兆半导体公司
FDMT80080DC Rev. 1.0
100
4
www.fairchildsemi.com
FDMT80080DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET
典型特性 TJ = 25 °C,除非另有说明。
10
50000
Ciss
VDD = 40 V
8
10000
VDD = 30 V
6
VDD = 50 V
4
2
0
Coss
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 36 A
1000
Crss
100
f = 1 MHz
VGS = 0 V
0
40
80
120
160
10
0.1
200
1
10
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
图 7. 栅极电荷特性
图 8. 电容与漏极 — 源极电压的关系
300
100
o
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
RJC = 0.8 C/W
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
1
0.01
0.1
1
10
100
1000
240
VGS = 10 V
180
VGS = 8 V
120
60
0
25
10000
75
100
125
图 10. 最大连续漏极电流与壳温的关系
2000
1000
P(PK), PEAK TRANSIENT POWER (W)
50000
SINGLE PULSE
RJC = 0.8 oC/W
10000
10 s
100
10
1
THIS AREA IS
LIMITED BY rDS(on)
100 s
1 ms
SINGLE PULSE
TJ = MAX RATED
o
RJC = 0.8 C/W
0.1
0.1
150
TC, CASE TEMPERATURE ( C)
图 9. 非箝位电感开关能力
ID, DRAIN CURRENT (A)
50
o
tAV, TIME IN AVALANCHE (ms)
TC = 25 oC
1
10 ms
CURVE BENT TO
MEASURED DATA
10
DC
100
300
1000
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
图 12. 单个脉冲最大功耗
图 11. 正向偏压安全工作区
©2015 飞兆半导体公司
FDMT80080DC Rev. 1.0
TC = 25 oC
5
www.fairchildsemi.com
FDMT80080DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET
典型特性 TJ = 25 °C,除非另有说明。
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
0.001
-5
10
注:
ZJC(t) = r(t) x RJC
RJC = 0.8 oC/W
峰值 TJ = PDM x ZJC(t) + TC
占空比 D = t1 / t2
SINGLE PULSE
-4
10
-3
-2
10
10
-1
10
1
t, RECTANGULAR PULSE DURATION (sec)
图 13. 结至外壳瞬态热响应曲线
©2015 飞兆半导体公司
FDMT80080DC Rev. 1.0
6
www.fairchildsemi.com
FDMT80080DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET
典型特性 TJ = 25 °C,除非另有说明。
(2X)
0.05 C
8.00±0.10
8
A
5
8
B
8.00
6.90
2.00
5
1.10
KEEP OUT
AREA
5.23
4.24
3.94
PKG
CL
8.00±0.10
9.00
(1.83)
1.55
(2.41)
1
4
PKG
CL
4.03
3.68
0.05 C
1.13
1
(2X)
1.10
(1.56)
(8X)
SEE DETAIL A
(1.00)
5.10
7.10
4
0.48
LAND PATTERN
RECOMMENDATION
0.30
0.20
0.95
0.75
0.10
.05
6.00
2.00
(0.50)
PIN #1
IDENT
1
(0.40)
2
3
4
C A B
C
1.10 8X
0.90
0.70
0.50
1.68
1.48
1.20
(0.91)
2.78
(1.23)
8
(0.60)
7
7.00
6.80
6
5
0.45
0.25
(4X)
5.33
5.13
0.05
0.00
C
SEATING
PLANE
SCALE: 2X
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE IS NOT PRESENTLY REGISTERED
WITH ANY STANDARDS COMMITTEE.
B) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR PROTRUSIONS.
C) ALL DIMENSIONS ARE IN MILLIMETERS.
D) DRAWING CONFORMS TO ASME Y14.5M-2009.
E) IT IS RECOMMENDED TO HAVE NO TRACES OR
VIAS WITHIN THE KEEP OUR AREA.
F) DRAWING FILENAME: MKT-PQFN08RREV2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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