FDN302P

FDN302P FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of ON’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –20 V, –2.4 A. RDS(ON) = 0.055 Ω @ VGS = –4.5 V RDS(ON) = 0.080 Ω @ VGS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) Applications • Power management • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint • Load switch • Battery protection D D S S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Drain-Source Voltage Ratings –20 Units VDSS Parameter VGSS Gate-Source Voltage ±12 V ID Drain Current (Note 1a) –2.4 –10 A (Note 1a) 0.5 W – Continuous – Pulsed PD Maximum Power Dissipation (Note 1b) TJ, TSTG V 0.46 –55 to +150 °C (Note 1a) 250 °C/W (Note 1) 75 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 302 FDN302P 7’’ 8mm 3000 units 2000 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: FDN302P/D Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –12 mV/°C Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ===∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA On Characteristics –20 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ===∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C 3 VGS = –4.5 V, ID = –2.4 A VGS = –2.5 V, ID = –2 A VGS = –4.5 V, ID = –2.4A, TJ =125°C 44 64 58 ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –2.4 A 10 S VDS = –10 V, f = 1.0 MHz V GS = 0 V, 882 pF 211 pF 112 pF –0.6 –1.0 –1.5 V mV/°C 55 80 84 –10 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = –10 V, VGS = –4.5 V, VDS = –10 V, VGS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –2.4 A, 13 23 ns 11 20 ns 25 40 ns 15 27 ns 9 14 nC 2 nC 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.42 (Note 2) –0.7 –0.42 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0% www.onsemi.com 2 FDN302P Electrical Characteristics FDN302P Typical Characteristics 3 15 -3.5V -3.0V -2.5V -4.0V 12 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -4.5V 9 6 -2.0V 3 VGS = -2.0V 2.5 2 -2.5V 1.5 -3.0V -3.5V -4.0V 1 -4.5V 0.5 0 0 0.5 1 1.5 2 0 2.5 3 6 Figure 1. On-Region Characteristics. 15 0.16 ID = -1.2 A ID = -2.4A VGS = -4.5V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 12 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 0.14 0.12 0.1 TA = 125oC 0.08 0.06 TA = 25oC 0.04 0.02 150 1.5 TJ, JUNCTION TEMPERATURE (oC) 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 12 25oC -IS, REVERSE DRAIN CURRENT (A) TA = 125oC VDS = - 5V 10 -ID, DRAIN CURRENT (A) 9 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) -55oC 8 6 4 2 VGS = 0V 1 TA = 125oC 0.1 25oC -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 3 0 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDN302P Typical Characteristics 1400 VDS = -5V ID = -2.4A f = 1MHz VGS = 0 V 1200 -10V 4 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 1000 CISS 800 600 400 COSS 1 200 0 CRSS 0 0 2 4 6 8 0 10 2 Figure 7. Gate Charge Characteristics. 6 8 10 12 Figure 8. Capacitance Characteristics. 20 P(pk), PEAK TRANSIENT POWER (W) 100 RDS(ON) LIMIT 1ms 10 10ms 100ms 1s 1 10s DC VGS =-4.5V SINGLE PULSE RθJA = 270oC/W 0.1 TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 270°C/W TA = 25°C 15 10 5 0 0.001 0.01 0.1 -VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID, DRAIN CURRENT (A) 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 270 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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