FDN327N

FDN327N FDN327N N-Channel 1.8 Vgs Specified PowerTrench MOSFET Features General Description • 2 A, 20 V. This 20V N-Channel MOSFET uses ON Semiconductor’s high voltage PowerTrench process. It has been optimized for power management applications. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 80 mΩ @ VGS = 2.5 V RDS(ON) = 120 mΩ @ VGS = 1.8 V Applications • Low gate charge (4.5 nC typical) • Load switch • Fast switching speed • Battery protection • Power management • High performance trench technology for extremely low RDS(ON) D D S S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 20 V VGSS Gate-Source Voltage ±8 V ID Drain Current (Note 1a) 2 A PD Power Dissipation for Single Operation (Note 1a) 0.5 (Note 1b) 0.46 – Continuous – Pulsed TJ, TSTG 8 W –55 to +150 °C (Note 1a) 250 °C/W (Note 1) 75 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 327 FDN327N 7’’ 8mm 3000 units 2001 Semiconductor Components Industries, LLC. September-2017, Rev 3 Publication Order Number: FDN327N/D Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA 1.5 V On Characteristics 20 ID = 250 µA,Referenced to 25°C V 12 mV/°C (Note 2) VDS = VGS, ID = 250 µA VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 4.5 V, ID = 2.0 A VGS = 2.5 V, ID = 1.9 A VGS = 1.8 V, ID = 1.6 A VGS = 4.5V, ID = 2 A, TJ = 125°C VGS = 4.5V, VDS = 5 V gFS Forward Transconductance VDS = 5V, ID = 2 A VDS = 10 V, f = 1.0 MHz V GS = 0 V 0.4 ID = 250 µA,Referenced to 25°C 0.7 –3 40 49 65 55 mV/°C 70 80 120 103 8 mΩ A 11 S 423 pF 87 pF 48 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) 6 12 ns 6.5 13 ns Turn–Off Delay Time 14 29 ns tf Turn–Off Fall Time 2 4 ns Qg Total Gate Charge 4.5 6.3 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 10 V, VGS = 4.5 V, VDS = 10 V, VGS = 4.5 V ID = 1 A, RGEN = 6 Ω ID = 2 A, 0.89 nC 0.95 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.6 0.42 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2 FDN327N Electrical Characteristics FDN327N Typical Characteristics 2 16 VGS = 4.5V RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V ID, DRAIN CURRENT (A) 3.0V 2.0V 12 1.8V 8 4 0 VGS = 1.8V 1.8 1.6 2.0V 1.4 2.5V 1.2 3.0V 3.5V 0.8 0 0.5 1 1.5 2 2.5 3 3.5 0 4 8 VDS, DRAIN-SOURCE VOLTAGE (V) 16 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.18 1.6 ID = 2A VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 12 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 ID = 1A 0.14 0.1 TA = 125 oC 0.06 o TA = 25 C 0.02 -50 -25 0 25 50 75 100 125 150 1 2 o TJ, JUNCTION TEMPERATURE ( C) 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 12 o TA =-55 C VGS = 0V o 25 C IS, REVERSE DRAIN CURRENT (A) VDS = 5V I D, DRAIN CURRENT (A) 4.5V 1 125oC 9 6 3 10 TA = 125oC 1 25oC 0.1 o -55 C 0.01 0.001 0 0.0001 0.5 1 1.5 2 2.5 0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDN327N Typical Characteristics 5 VGS , GATE-SOURCE VOLTAGE (V) 600 VDS = 5V ID = 2A f = 1MHz VGS = 0 V 10V 500 4 CISS CAPACITANCE (pF) 15V 3 2 1 400 300 200 COSS 100 CRSS 0 0 0 2 4 6 0 4 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) RDS(ON) LIMIT 100µs 1ms 10ms 1 100ms 1s DC VGS = 4.5V SINGLE PULSE 0.1 o RθJA = 270 C/W o TA = 25 C 16 20 20 SINGLE PULSE RθJA = 270°C/W TA = 25°C 15 10 5 0 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 12 Figure 8. Capacitance Characteristics. 100 10 8 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA (t) = r(t) + RθJA RθJA = 270 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 0.01 0.001 0.0001 t2 SINGLE PULSE 0.001 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. 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