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FDN338P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
• –1.6 A, –20 V. RDS(ON) = 115 mΩ @ V GS = –4.5 V
RDS(ON) = 155 mΩ @ V GS = –2.5 V
Applications
• Fast switching speed
•
Battery management
•
Load switch
• High performance trench technology for extremely
low RDS(ON)
•
Battery protection
• SuperSOTT M -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
D
D
S
S
G
TM
SuperSOT -3
G
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Ratings
Units
V DSS
Drain-Source Voltage
Parameter
–20
V
V GSS
Gate-Source Voltage
V
ID
Drain Current
±8
–1.6
– Continuous
– Pulsed
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ , TSTG
A
–5
0.5
W
0.46
–55 to +150
°C
(Note 1a)
250
°C/W
(Note 1)
75
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
338
FDN338P
7’’
8mm
3000 units
2001 Fairchild Semiconductor Corporation
FDN338P Rev F1(W)
FDN338P
November 2013
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
–16
mV/°C
Off Characteristics
∆BV DSS
∆TJ
IDSS
Drain–Source Breakdown Voltage V GS = 0 V, ID = –250 µA
Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C
Coefficient
Zero Gate Voltage Drain Current
V DS = –16 V, V GS = 0 V
IGSSF
Gate–Body Leakage, Forward
V GS = 8 V,
V DS = 0 V
100
µA
nA
IGSSR
Gate–Body Leakage, Reverse
V GS = –8 V,
V DS = 0 V
–100
nA
BV DSS
On Characteristics
–20
V
–1
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS , ID = –250 µA
∆V GS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA, Referenced to 25°C
2.7
88
117
116
ID(on)
On–State Drain Current
V GS
V GS
V GS
V GS
gFS
Forward Transconductance
V DS = –5 V,
ID = –1.6 A
6
S
V DS = –10 V,
f = 1.0 MHz
V GS = 0 V,
451
pF
75
pF
33
pF
–0.4
= –4.5 V, ID = –1.6 A
= –2.5 V, ID = –1.3 A
= –4.5 V, ID = –1.6 A, TJ =125°C
= –4.5 V, V DS = –5 V
–0.8
–1.5
V
mV/°C
115
155
165
–5
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
(Note 2)
V DD = –10 V,
V GS = –4.5 V,
10
20
ns
11
20
ns
Turn–Off Delay Time
16
29
ns
tf
Turn–Off Fall Time
6.5
13
ns
Qg
Total Gate Charge
4.4
6.2
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
V DS = –10 V,
V GS = –4.5 V
ID = –1 A,
RGEN = 6 Ω
ID = –1.6 A,
1.1
nC
0.7
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V, IS = –0.42
(Note 2)
–0.7
–0.42
A
–1.2
V
Notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDN338P Rev F1(W)
FDN338P
Typical Characteristics
5
2.2
V GS = -4.5V
-3.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-2.5V
-2.0V
-ID , DRAIN CURRENT (A)
4
3
2
1
2
VGS = -2.0V
1.8
1.6
1.4
-2.5V
-3.0V
1.2
-3.5V
-4.5V
1
0.8
0
0
0.5
1
1.5
0
2
1
Figure 1. On-Region Characteristics.
4
5
0.34
ID = -0.8 A
ID = -1.6A
V GS = -4.5V
1.6
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.4
1.2
1
0.8
0.3
0.26
0.22
0.18
T A = 125o C
0.14
0.1
TA = 25o C
0.6
-50
-25
0
25
50
75
100
125
150
0.06
1
2
T J, JUNCTION TEMPERATURE ( oC)
3
4
5
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
5
VDS = - 5V
TA = -55o C
V GS = 0V
25oC
1
4
-ID, DRAIN CURRENT (A)
2
-I D, DRAIN CURRENT (A)
-V DS, DRAIN-SOURCE VOLTAGE (V)
125o C
TA = 125o C
3
0.1
2
0.01
1
0.001
25o C
-55 oC
0.0001
0
0.5
0.75
1
1.25
1.5
1.75
2
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.25
0
0.2
0.4
0.6
0.8
1
1.2
-V SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN338P Rev F1(W)
FDN338P
Typical Characteristics
5
600
I D = -1.6A
V DS = -5V
-V GS, GATE-SOURCE VOLTAGE (V)
-10V
f = 1MHz
VG S = 0 V
500
4
CISS
-15V
400
3
300
2
200
CO S S
1
100
CR S S
0
0
0
1
2
3
4
5
0
2
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
6
8
10
20
RDS(ON) LIMIT
P(pk), PEAK TRANSIENT POWER (W)
1ms
10ms
100ms
1
1s
10s
DC
V GS =-4.5V
SINGLE PULSE
Rθ JA = 270oC/W
0.1
TA =
25o C
0.01
0.1
1
10
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
15
10
5
0
0.001
100
0.01
-V DS , DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
100
1000
t 1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
12
Figure 8. Capacitance Characteristics.
10
-ID, DRAIN CURRENT (A)
4
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) x R θJA
RθJA = 270 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN338P Rev F1(W)
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock™
AccuPower™
F-PFS™
®
AX-CAP®*
FRFET®
®*
®
SM
Global Power Resource
PowerTrench
BitSiC™
GreenBridge™
PowerXS™
Build it Now™
TinyBoost®
CorePLUS™
Green FPS™
Programmable Active Droop™
TinyBuck®
®
CorePOWER™
Green FPS™ e-Series™
QFET
TinyCalc™
QS™
CROSSVOLT™
Gmax™
TinyLogic®
Quiet Series™
CTL™
GTO™
TINYOPTO™
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Current Transfer Logic™
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TinyPower™
DEUXPEED®
ISOPLANAR™
™
TinyPWM™
Dual Cool™
Marking Small Speakers Sound Louder
TinyWire™
Saving our world, 1mW/W/kW at a time™
EcoSPARK®
and Better™
TranSiC™
EfficentMax™
SignalWise™
MegaBuck™
TriFault Detect™
ESBC™
SmartMax™
MICROCOUPLER™
TRUECURRENT®*
SMART
START™
MicroFET™
®
μSerDes™
Solutions for Your Success™
MicroPak™
SPM®
MicroPak2™
Fairchild®
STEALTH™
MillerDrive™
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UHC®
SuperFET®
MotionMax™
FACT Quiet Series™
®
Ultra FRFET™
SuperSOT™-3
mWSaver
FACT®
UniFET™
OptoHiT™
SuperSOT™-6
FAST®
VCX™
OPTOLOGIC®
SuperSOT™-8
FastvCore™
VisualMax™
OPTOPLANAR®
SupreMOS®
FETBench™
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XS™
tm
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