FDN342P

FDN342P FDN342P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V). Applications • Load Switch • Battery Protection • Power Management Features • -2 A, -20 V. RDS(ON) = 0.08 Ω @ VGS = -4.5 V RDS(ON) = 0.13 Ω @ VGS = -2.5 V. • Rugged gate rating (±12V). • High performance trench technology for extremely low RDS(ON). • Enhanced power SuperSOTTM-3 (SOT-23). D D S TM SuperSOT -3 G Absolute Maximum Ratings Symbol S G TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage V ID Drain Current ±12 -2 - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation TJ, Tstg A -10 (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range -55 to +150 W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDN342P FDN342P 7’’ 8mm 3000 units  1999 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: FDN342P/D Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = -250 µA,Referenced to 25°C Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 12 V, VDS = 0 V 100 µA nA VGS = -12 V, VDS = 0 V -100 nA IGSSR On Characteristics -20 V -16 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient ID = -250 µA,Referenced to 25°C 3 Static Drain-Source On-Resistance 0.062 0.086 0.099 ID(on) On-State Drain Current VGS = -4.5 V, ID = -2 A VGS = -4.5 V, ID = -2 A,TJ=125°C VGS = -2.5 V, ID = -1.5 A VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -5 A -0.6 -1.05 -1.5 V mV/°C 0.08 0.14 0.13 -5 Ω A 7 S Dynamic Characteristics VDS = -10 V, VGS = 0 V f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 635 pF 175 pF 75 pF (Note 2) VDD = -10 V, ID = -1 A VGS = -4.5 V, RGEN = 6 Ω 20 VDS = -10 V, ID = -2 A VGS = -4.5 V, 35 ns 8 16 ns 9 18 ns 19 32 ns 6.3 9 nC 1.5 nC 1.7 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A (Note 2) -0.7 -0.42 A -1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. Cu. b) 270°C/W when mounted on a mininum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2 FDN342P Electrical Characteristics FDN342P Typical Characteristics 2 VGS = -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN-SOURCE CURRENT (A) 20 -4.0V -3.5V 15 -3.0V 10 -2.5V 5 -2.0V 1.8 VGS = -2.5V 1.6 -3.0V 1.4 -3.5V 1.2 -4.0V -4.5V 1 0 0 1 2 3 4 0.8 5 0 -VDS, DRAIN-SOURCE VOLTAGE (V) 4 8 12 16 20 - ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.3 ID = -2.0A VGS = -4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 ID = -1A 0.2 TA = 125oC 0.1 TA = 25oC 0 0.6 -50 -25 0 25 50 75 100 125 1 150 2 Figure 3. On-Resistance Variation with Temperature. 4 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 8 -IS, REVERSE DRAIN CURRENT (A) 25oC TA = -55oC VDS = -5V o -ID, DRAIN CURRENT (A) 3 -VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) 125 C 6 4 2 VGS = 0V 10 TA = 125oC 25oC 1 -55oC 0.1 0.01 0.001 0.0001 0 0.4 1.4 2.4 3.4 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 1.4 (continued) 5 1000 VDS = -5V ID = -2A f = 1MHz VGS = 0 V -10V 4 800 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) FDN342P Typical Characteristics 3 2 CISS 600 400 1 200 0 0 COSS CRSS 0 2 4 6 0 8 5 Qg, GATE CHARGE (nC) 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 100 20 SINGLE PULSE POWER (W) 1ms 1 100ms VGS = -4.5V SINGLE PULSE RθJA = 270oC/W 0.1 o TA=25 C 10ms 10s DC 1s 12 8 4 TA = 25oC 0 0.01 0.1 1 10 100 0.0001 0.001 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE 1 TRANSIENT THERMAL RESISTANCE -ID, DRAIN CURRENT (A) o RDS(ON) LIMIT 10 RθJA=270 C/W 16 0.5 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.2 R θJA (t) = r(t) * RθJA R θJA = 270 °C/W 0.1 0.05 0.02 0.01 P(pk) t1 Single Pulse t2 0.005 TJ - TA = P * RθJA (t) 0.002 Duty Cycle, D = t1 /t2 0.001 0.0001 0.001 0.01 0.1 1 10 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. www.onsemi.com 4 100 300 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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