FDN358P

FDN358P FDN358P Single P-Channel, Logic Level, PowerTrench MOSFET Features General Description • –1.5 A, –30 V. RDS(ON) = 125 mΩ @ VGS = –10 V RDS(ON) = 200 mΩ @ VGS = –4.5 V This P-Channel Logic Level MOSFET is produced using ON Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Low gate charge (4 nC typical) • High performance trench technology for extremely low RDS(ON) . These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion. • High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. D D S G TM SuperSOT -3 Absolute Maximum Ratings Symbol VDSS TA=25oC unless otherwise noted Parameter Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Power Dissipation for Single Operation – Continuous Ratings Units –30 V ±20 V (Note 1a) –1.5 A (Note 1a) 0.5 (Note 1b) 0.46 – Pulsed TJ, TSTG S G –5 W –55 to +150 °C (Note 1a) 250 °C/W (Note 1) 75 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 358 FDN358P 7’’ 8mm 3000 units 2003 Semiconductor Components Industries, LLC. October-2017, Rev.7 Publication Order Number: FDN358P/D Symbol Parameter T A = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C VDS = –24V, V –30 –22 VGS = 0 V mV/°C –1 µA –10 VDS = –24V, VGS = 0 V, TJ=55°C IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA –3 V On Characteristics (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS= –4.5 V, ID = –1.2A, ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –1.5 A 3.5 VDS = –15 V, f = 1.0 MHz V GS = 0 V, 182 pF 56 pF 26 pF VGS(th) ∆VGS(th) ∆TJ RDS(on) VGS = –10 V, –1 –1.9 4 ID = –1.5 A VGS = –10 V, ID = –1.5 A,TJ=125°C mV/°C 105 125 148 210 161 200 –5 mΩ A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = –15 V, VGS = –10 V, VDS = –15V, VGS = –10 V ID = –0.5 A, RGEN = 6 Ω ID = –1.5 A, 5 10 13 23 ns ns 12 21 ns 2 4 ns 4 5.6 nC 0.8 nC 0.8 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –0.42 A Voltage (Note 2) –0.76 –0.42 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2 FDN358P Electrical Characteristics FDN358P Typical Characteristics 5 VGS=-10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 2.2 -4.5V -6.0V 4 -3.5V 3 2 -3.0V 1 2.0 VGS=-4.0V 1.8 1.6 -4.5V -5.0V 1.4 -6.0V 1.2 -7.0V -10V 1.0 0 0 0.5 1 1.5 2 0.8 2.5 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 2 3 4 5 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 1.6 ID = -1.5A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 ID = -0.75A 0.3 TA = 125oC 0.2 TA = 25oC 0.1 0 150 2 4 6 8 10 o TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 5 -ID, DRAIN CURRENT (A) -IS, REVERSE DRAIN CURRENT (A) 10 TA = -55oC VDS = -5V 25oC 4 125oC 3 2 1 0 VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 1.5 2 2.5 3 3.5 4 0.0 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDN358P Typical Characteristics 250 ID = -1.5A VDS = -5V 8 200 -15V 6 4 150 100 2 50 0 0 COSS CRSS 0 1 2 3 4 0 5 Qg, GATE CHARGE (nC) 10 15 25 P(pk), PEAK TRANSIENT POWER (W) 20 RDS(ON) LIMIT 1ms 10ms 100ms 1 1s 10s DC 0.1 VGS = -10V SINGLE PULSE RθJA = 270oC/W o TA = 25 C 0.01 0.1 1 30 Figure 8. Capacitance Characteristics. 10 10 SINGLE PULSE RθJA = 270°C/W TA = 25°C 15 10 5 0 0.001 100 0.01 0.1 1 -VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V CISS -10V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 270 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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