FDN372S
30V N-Channel PowerTrench SyncFET™
General Description
Features
The FDN372S is designed to replace a single MOSFET
and Schottky diode, used in synchronous DC-DC
power supplies, with a single integrated component.
This 30V MOSFET is designed to maximize power
conversion efficiency with low Rds(on) and low gate
charge. The FDN372S includes an integrated Schottky
diode using Fairchild Semiconductor’s monolithic
SyncFET process, making it ideal as the low side
switch in a synchronous converter.
• 2.6 A, 30 V.
RDS(ON) = 40 mΩ @ VGS = 10 V
RDS(ON) = 50 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
Applications
•
DC-DC Converter
•
Motor Drives
D
D
S
S
G
TM
SuperSOT -3
G
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
– Continuous
(Note 1a)
– Pulsed
TJ, TSTG
Units
30
V
± 16
V
2.6
A
10
Power Dissipation for Single Operation
PD
Ratings
(Note 1a)
0.5
(Note 1b)
0.46
Operating and Storage Junction Temperature Range
–55 to +150
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
250
°C/W
(Note 1)
75
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
372
FDN372S
7’’
8mm
3000 units
2002 Fairchild Semiconductor Corporation
FDN372S Rev C(W)
FDN372S
September 2002
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V,
VDS = 24 V,
VGS = 0 V
500
µA
IGSS
Gate–Body Leakage
VGS = ±16 V,
VDS = 0 V
±100
nA
3
V
On Characteristics
ID = 1 mA
30
V
24
ID = 10 mA, Referenced to 25°C
mV/°C
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 10 mA, Referenced to 25°C
ID = 1 mA
ID(on)
On–State Drain Current
VGS = 10 V,
ID = 2.6 A
ID = 2.3 A
VGS = 4.5 V,
VGS = 10V, ID = 2.6 A, TJ = 125°C
VGS = 10 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 10V,
ID = 2.6 A
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1
1.4
–3.2
32
36
45
mV/°C
40
50
60
mΩ
10
A
15
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
V GS = 15 mV
f = 1.0 MHz
630
pF
115
pF
45
pF
2.4
Ω
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15 V,
VGS = 5 V
ID = 2.6 A,
7
14
ns
5
10
ns
21
34
ns
2.7
5.4
ns
5.8
8.1
nC
1.3
1.9
nC
1.2
1.7
nC
0.7
A
440
700
mV
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 0.7 A
IF = 2.6 A,
diF/dt = 300 A/µs
(Note 2)
(Note 2)
10
ns
4
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDN372S Rev C(W)
FDN372S
Electrical Characteristics
FDN372S
Typical Characteristics
2.2
25
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
VGS = 10V
3.5V
ID, DRAIN CURRENT (A)
20
3.0V
15
10
2.5V
5
0
2
VGS = 2.5V
1.8
1.6
1.4
3.5V
4.5V
1
2
3
4
0
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
30
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.12
ID = 2.6A
VGS = 10V
0.11
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10V
1
0.8
0
1.4
1.2
1
0.8
ID = 1.3A
0.1
0.09
TA = 125oC
0.08
0.07
0.06
0.05
TA = 25oC
0.04
0.03
0.6
0.02
-50
-25
0
25
50
75
100
125
1
o
2
3
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
10
8
IS, REVERSE DRAIN CURRENT (A)
TA = -55oC
VDS = 10V
ID, DRAIN CURRENT (A)
5.0V
4 5V
1.2
25oC
6
125oC
4
2
0
VGS = 0V
1
0.1
TA = 125oC
25oC
0.01
-55oC
0.001
0.0001
0.5
1.5
2.5
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4.5
0.0
0.2
0.4
0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN372S Rev C(W)
FDN372S
Typical Characteristics
800
ID = 2.6A
VDS = 10V
f = 1 MHz
VGS = 0 V
15V
4
Ciss
600
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
5
20V
3
2
400
200
1
Coss
Crss
0
0
1
2
3
4
5
6
0
7
0
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
15
20
Figure 8. Capacitance Characteristics.
100
20
10
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100µs
1ms
10ms
1s
DC
1
100ms
VGS = 10V
SINGLE PULSE
RθJA = 270oC/W
0.1
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
15
10
5
0
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL
RESISTANCE
1
D = 0.5
RθJA(t) = r(t)* RθJA
o
0.2
0.1
RθJA = 270 C/W
0.1
0.05
P(pk)
0.02
0.01
0.001
0.0001
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN372S Rev C(W)
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I1
