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FDN8601
N-Channel PowerTrench® MOSFET
100 V, 2.7 A, 109 m:
Features
General Description
Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
Applications
Primary DC-DC Switch
Fast switching speed
Load Switch
100% UIL tested
RoHS Compliant
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
-Continuous
ID
(Note 1a)
-Pulsed
PD
TJ, TSTG
Units
V
±20
V
2.7
12
Single Pulse Avalanche Energy
EAS
Ratings
100
(Note 3)
13
Power Dissipation
(Note 1a)
1.5
Power Dissipation
(Note 1b)
0.6
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RTJC
Thermal Resistance, Junction to Case
RTJA
Thermal Resistance, Junction to Ambient
(Note 1)
75
(Note 1a)
80
°C/W
Package Marking and Ordering Information
Device Marking
8601
©2010 Fairchild Semiconductor Corporation
FDN8601 Rev. C
Device
FDN8601
Package
SSOT-3
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
www.fairchildsemi.com
FDN8601 N-Channel PowerTrench® MOSFET
July 2010
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 PA, VGS = 0 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 PA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
1
PA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4.0
V
100
V
68
mV/°C
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 PA
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 PA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
2.0
3.0
-8
mV/°C
VGS = 10 V, ID = 1.5 A
85.4
109
VGS = 6 V, ID = 1.2 A
117
175
VGS = 10 V, ID = 1.5 A, TJ = 125 °C
143
183
VDS = 10 V, ID = 1.5 A
8
m:
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
156
210
pF
47
65
pF
2.7
5
pF
:
1.0
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0 V to 10 V
Qg
Total Gate Charge
VGS = 0 V to 5 V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 1.5 A,
VGS = 10 V, RGEN = 6 :
VDD = 50 V,
ID = 1.5 A
4.3
10
ns
1.3
10
ns
7.8
16
ns
3.4
10
ns
3
5
nC
1.8
3
nC
0.9
nC
0.8
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 1.5 A
(Note 2)
IF = 1.5 A, di/dt = 100 A/Ps
0.81
1.3
V
29
46
ns
15
27
nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 80 °C/W when mounted on a
b) 180 °C/W when mounted on a
minimum pad.
1 in2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V.
©2010 Fairchild Semiconductor Corporation
FDN8601 Rev. C
2
www.fairchildsemi.com
FDN8601 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
5
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
12
VGS = 8 V
VGS = 7 V
9
VGS = 6 V
6
VGS = 5 V
3
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
VGS = 5 V
4
VGS = 6 V
3
2
VGS = 7 V
1
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5% MAX
0
5
0
3
Figure 1. On-Region Characteristics
12
500
ID = 1.5 A
VGS = 10 V
1.8
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE (m:)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
9
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
IS, REVERSE DRAIN CURRENT (A)
9
VDS = 5 V
6
TJ = 25 oC
3
TJ = -55 oC
3
4
5
6
7
400
300
TJ = 125 oC
200
100
TJ = 25 oC
5
6
7
8
9
20
10
TJ = 150 oC
1
TJ = 25 oC
0.1
0.01
TJ = -55 oC
0.001
0.2
8
VGS = 0 V
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
FDN8601 Rev. C
10
Figure 4. On-Resistance vs Gate to
Source Voltage
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
2
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
VGS, GATE TO SOURCE VOLTAGE (V)
12
TJ = 150 oC
ID = 1.5 A
0
4
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
6
VGS = 10 V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
VGS = 8 V
3
1.2
www.fairchildsemi.com
FDN8601 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
300
ID = 1.5 A
VDD = 25 V
Ciss
100
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 50 V
6
VDD = 75 V
4
Coss
10
Crss
2
0
f = 1 MHz
VGS = 0 V
0
1
2
3
1
0.1
4
1
Figure 7. Gate Charge Characteristics
100
Figure 8. Capacitance vs Drain
to Source Voltage
7
20
10
6
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
5
TJ = 25 oC
4
TJ = 100 oC
3
TJ = 125 oC
100 us
1
1 ms
0.1
THIS AREA IS
LIMITED BY rDS(on)
0.01
2
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
10 s
RTJA = 180 oC/W
DC
o
TA = 25 C
1
0.01
0.1
1
0.001
2
tAV, TIME IN AVALANCHE (ms)
0.1
1
10
100
400
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Forward Bias Safe
Operating Area
P(PK), PEAK TRANSIENT POWER (W)
300
SINGLE PULSE
100
o
RTJA = 180 C/W
o
TA = 25 C
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum Power Dissipation
©2010 Fairchild Semiconductor Corporation
FDN8601 Rev. C
4
www.fairchildsemi.com
FDN8601 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZTJA
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
SINGLE PULSE
o
RTJA = 180 C/W
0.001 -4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDN8601 Rev. C
5
www.fairchildsemi.com
FDN8601 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Semiconductor. The datasheet is for reference information only.
Rev. I48
©2010 Fairchild Semiconductor Corporation
FDN8601 Rev. C
6
www.fairchildsemi.com
FDN8601 N-Channel PowerTrench® MOSFET
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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