FDP083N15A

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP083N15A N-Channel PowerTrench® MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS(on) = 6.85 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Fast Switching Speed • Low Gate Charge, QG = 64.5 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS(on) Applications • Synchronous Rectification for ATX / Server / Telecom PSU • High Power and Current Handling Capability • Battery Protection Circuit • RoHS Compliant • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter D GD S G TO-220 S Absolute Maximum Ratings TC = Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage 25oC unless otherwise noted. Parameter FDP083N15A_F102 150 - DC ±20 - AC (f > 1 Hz) o ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - Continuous (TC = 25 C, Silicon Limited) V ±30 117 A - Continuous (TC = 100oC, Silicon Limited) 83 - Pulsed (Note 1) 468 A (Note 2) 542 mJ 6 V/ns (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL Unit V - Derate Above 25oC 294 W 1.96 W/oC -55 to +175 o C 300 o C Thermal Characteristics Symbol Parameter FDP083N15A_F102 RθJC Thermal Resistance, Junction to Case, Max. 0.51 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2011 Fairchild Semiconductor Corporation FDP083N15A Rev. 1.21 1 Unit oC/W www.fairchildsemi.com FDP083N15A — N-Channel PowerTrench® MOSFET April 2015 Part Number FDP083N15A_F102 Top Mark FDP083N15A Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 150 - - V - 0.08 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V, TC = 25oC ID = 250 μA, Referenced to 25oC VDS = 120 V, VGS = 0 V - - 1 VDS = 120 V, TC = 150oC - - 500 VGS = ±20 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 75 A - 6.85 8.30 mΩ gFS Forward Transconductance VDS = 10 V, ID = 75 A - 139 - S VDS = 25 V, VGS = 0 V, f = 1 MHz - 4645 6040 pF - 1445 1880 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance(G-S) VDS = 7 5V, VGS = 0 V, f = 1 MHz - 100 - - 4570 6040 pF - 460 1880 pF - 20 - pF - 64.5 84 nC - 19.1 - nC - 8.7 - nC - 13.5 - nC f = 1 MHz - 2.5 - Ω VDD = 75 V, ID = 75 A, VGS = 10 V, RG = 4.7 Ω - 22 54 ns - 58 126 ns VDS = 120 V, ID = 75 A, VGS = 10 V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) - 61 132 ns - 26 62 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 117 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 468 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 75 A - - 1.25 V trr Reverse Recovery Time - 96 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 75 A, dIF/dt = 100 A/μs - 268 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. Starting TJ = 25°C, L = 3 mH, ISD = 19 A. 3. ISD ≤ 75 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2011 Fairchild Semiconductor Corporation FDP083N15A Rev. 1.21 2 www.fairchildsemi.com FDP083N15A — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 300 VGS = 10.0V 8.0V 6.5V 6.0V 5.5V 5.0V 100 ID, Drain Current[A] ID, Drain Current[A] 500 100 o 175 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 10V 2. 250μs Pulse Test o 10 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 VGS, Gate-Source Voltage[V] 500 IS, Reverse Drain Current [A] 12 10 VGS = 10V 8 VGS = 20V 6 100 o 175 C 10 *Notes: 1. VGS = 0V *Note: TC = 25 C 0 100 200 300 ID, Drain Current [A] 1 0.0 400 Figure 5. Capacitance Characteristics o 25 C o 4 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 14 RDS(ON) [mΩ], Drain-Source On-Resistance 2 2. 250μs Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.5 Figure 6. Gate Charge Characteristics 10 10000 VGS, Gate-Source Voltage [V] Ciss Capacitances [pF] Coss 1000 Crss 100 *Note: 1. VGS = 0V 2. f = 1MHz 50 0.1 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 10 VDS, Drain-Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDP083N15A Rev. 1.21 6 4 2 0 30 3 VDS = 30V VDS = 75V VDS = 120V 8 *Note: ID = 75A 0 14 28 42 56 Qg, Total Gate Charge [nC] 70 www.fairchildsemi.com FDP083N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 75A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 1000 120 100 100 10μs 10 100μs ID, Drain Current [A] ID, Drain Current [A] 2.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area 1 2.5 1ms Operation in This Area is Limited by R DS(on) 10ms SINGLE PULSE DC o 0.1 TC = 25 C 80 VGS = 10V 60 40 20 o TJ = 175 C o 0.01 0.1 o RθJC = 0.51 C/W 1 10 100 VDS, Drain-Source Voltage [V] 0 25 300 RθJC= 0.51 C/W 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Unclamped Inductive Switching Capability IAS, AVALANCHE CURRENT (A) 300 If R = 0 t AV = (L) ( IAS ) /( 1.3*RATED BV DSS -V DD ) If R = 0 t AV = (L/R)In [( IAS *R ) /( 1.3*RATED BV DSS -V DD ) +1 ] 100 o STARTING T J = 25 C 10 o STARTING T J = 150 C 1 0.001 0.01 0.1 1 10 100 1000 t AV , TIM E IN AVALANCHE (m s) ©2011 Fairchild Semiconductor Corporation FDP083N15A Rev. 1.21 4 www.fairchildsemi.com FDP083N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP083N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve Thermal Response [ZθJC] ZθJC(t), Thermal Response [oC/W] 1 0.5 0.1 0.2 0.1 PDM 0.05 0.01 t1 0.02 0.01 *Notes: Single pulse 1E-3 -5 10 ©2011 Fairchild Semiconductor Corporation FDP083N15A Rev. 1.21 t2 o 1. ZθJC(t) = 0.51 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 10 Rectangular Pulse [sec] t1, Rectangular PulseDuration Duration [sec] 5 -1 10 0 10 www.fairchildsemi.com FDP083N15A — N-Channel PowerTrench® MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDP083N15A Rev. 1.21 6 www.fairchildsemi.com FDP083N15A — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDP083N15A Rev. 1.21 7 www.fairchildsemi.com 3.89 3.60 0.36 M 10.360 10.109 A B B A 2.860 2.660 8.89 6.86 6.477 6.121 1.41 1.17 7° 3° 15.215 14.757 15.97 8.787 15.89 8.587 1 13.894 12.941 12.878 12.190 5° 3° 5° 3° 3 3 2.640 2.440 1 2.755 2.555 1.650 (SEE NOTE E) 1.250 1.91 5° 3° C 0.889 0.787 0.36 M C B 0.457 0.357 5.180 4.980 5° 3° 4.672 4.472 NOTES: A. PACKAGE REFERENCE: JEDEC TO220 VARIATION AB B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. MAX WIDTH FOR F102 DEVICE = 1.35mm. F. DRAWING FILE NAME: TO220T03REV4. G. FAIRCHILD SEMICONDUCTOR. 3.962 3.505 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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