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N-Channel PowerTrench® MOSFET
100 V, 96 A, 8.5 mΩ
Features
Description
This N-Channel MOSFET is produced using ON Semiconductor's
PowerTrench® process that has been tailored to minimize the
on-state resistance while maintaining superior switching
performance.
• RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A
• Fast Switching Speed
• Low Gate Charge, QG = 31 nC (Typ.)
Applications
• High Performance Trench Technology for Extremely Low
RDS(on)
• Synchronous Rectification for ATX / Server / Telecom PSU
• High Power and Current Handling Capability
• Battery Protection Circuit
• RoHS Compliant
• Motor Drives and Uninterruptible Power Supplies
D
GD
S
G
TO-220
S
MOSFET Maximum Ratings TC = 25
Symbol
VDSS
C unless otherwise noted.
Parameter
FDP085N10A-F102
100
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
dv/dt
Peak Diode Recovery dv/dt
EAS
o
±20
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
A
68
(Note 1)
384
A
(Note 2)
269
mJ
6.0
V/ns
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
TL
V
96
(Note 3)
(TC = 25oC)
Unit
V
- Derate Above 25oC
188
W
W/oC
1.25
o
-55 to +175
o
300
C
C
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case, Max.
0.8
RθJA
Thermal Resistance, Junction to Ambient, Max.
62.5
©2011 Semiconductor Components Industries, LLC
November-2017, Rev. 3
Unit
FDP085N10A-F102
RθJC
1
o
C/W
Publication Order Number:
FDP085N10A/D
FDP085N10A — N-Channel PowerTrench® MOSFET
FDP085N10A
Part Number
FDP085N10A-F102
Top Mark
FDP085N10A
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
100
-
-
V
-
0.07
-
V/oC
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 µA, VGS = 0 V,TC = 25oC
o
ID = 250 µA, Referenced to 25 C
VDS = 80 V, VGS = 0 V
VDS = 80 V, TC = 150oC
-
-
1
-
-
500
VGS = ±20 V, VDS = 0 V
-
-
±100
VGS = VDS, ID = 250 µA
2.0
-
4.0
V
-
7.35
8.5
mΩ
-
72
-
S
-
2025
2695
pF
-
468
620
pF
pF
µA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
gFS
Forward Transconductance
Static Drain to Source On Resistance
VGS = 10 V, ID = 96 A
VDS = 10 V, ID = 96 A
Dynamic Characteristics
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs2
Gate Charge Threshoid to Plateau
ESR
Equivalent Series Resistance (G-S)
Coss
Output Capacitance
Coss(er)
Energy Releted Output Capacitance
Qgs
Gate to Source Gate Charge
Qgd
VDS = 50 V, VGS = 0 V,
f = 1 MHz
-
20
-
VDS = 50 V, VGS = 0 V
-
752
-
pF
-
31
40
nC
VGS = 10 V, VDS = 50 V,
ID = 96 A
-
9.7
-
nC
-
5.0
-
nC
-
7.5
-
nC
-
0.97
-
Ω
-
18
46
ns
-
22
54
ns
-
29
68
ns
-
8
26
ns
Gate to Drain “Miller” Charge
(Note 4)
f = 1 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
td(off)
Turn-Off Delay Time
tr
Turn-On Rise Time
tf
Turn-Off Fall Time
VDD = 50 V, ID = 96 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
96
A
Maximum Pulsed Drain to Source Diode Forward Current
-
-
384
A
VSD
Drain to Source Diode Forward Voltage
-
-
1.3
V
-
59
-
ns
-
80
-
nC
ISM
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 96 A
VDD = 50 V,VGS = 0 V, ISD = 96 A,
dIF/dt = 100 A/µs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 13.4 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 96 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
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2
FDP085N10A — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
FDP085N10A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
300
VGS = 15.0V
10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
100
100
ID, Drain Current[A]
ID, Drain Current[A]
500
o
175 C
o
25 C
10
o
-55 C
*Notes:
1. 250µs Pulse Test
10
o
2. TC = 25 C
5
0.1
1
VDS, Drain-Source Voltage[V]
1
5
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
18
2
3
4
5
6
VGS, Gate-Source Voltage[V]
500
o
*Note: TC = 25 C
IS, Reverse Drain Current [A]
RDS(ON) [mΩ],
Drain-Source On-Resistance
VGS = 10V
12
8
VGS = 20V
0
100
200
300
ID, Drain Current [A]
o
10
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
0.6
0.9
1.2
VSD, Body Diode Forward Voltage [V]
1.5
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
Ciss
Capacitances [pF]
o
25 C
1
0.3
10000
1000
10
0.1
175 C
100
400
Figure 5. Capacitance Characteristics
100
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
16
4
*Notes:
1. VDS = 10V
2. 250µs Pulse Test
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
10
VDS, Drain-Source Voltage [V]
6
4
2
0
100
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3
VDS = 20V
VDS = 50V
VDS = 80V
8
*Note: ID = 96A
0
7
14
21
28
Qg, Total Gate Charge [nC]
35
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.12
1.08
1.04
1.00
0.96
0.92
-80
*Notes:
1. VGS = 0V
2. ID = 250µA
-40
0
40
80
120 160
o
TJ, Junction Temperature [ C]
1.0
ID, Drain Current [A]
100µs
10
Operation in This Area
is Limited by R DS(on)
1 *Notes:
o
1. TC = 25 C
1ms
10ms
DC
VGS= 10V
40
20
2. TJ = 175 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
o
RθJC = 0.8 C/W
0
25
200
Figure 11. Eoss vs. Drain to Source Voltage
IAS, AVALANCHE CURRENT (A)
2.0
1.5
1.0
0.5
20
40
60
80
V DS , Drain to Source Voltage [V ]
50
75
100
125
150
o
TC, Case Temperature [ C]
175
Figure 12. Unclamped Inductive
Switching Capability
30
2.5
EOSS, [µJ]
200
60
o
0
0
40
80
120 160
o
TJ, Junction Temperature [ C]
80
100
0.0
-40
100
10µs
0.1
*Notes:
1. VGS = 10V
2. ID = 96A
Figure 10. Maximum Drain Current
vs. Case Temperature
1000
ID, Drain Current [A]
1.5
0.5
-80
200
Figure 9. Maximum Safe Operating Area
2.0
100
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4
If R = 0
t AV = (L)(IAS)/(1.3*RATED BV DSS -V DD )
If R = 0
t AV = (L/R)In[(I AS*R)/(1.3*RATED BV DSS-V DD )+1]
10
o
STARTING T J = 25 C
o
STARTING T J = 150 C
1
0.01
0.1
1
10
100 300
tAV , TIME IN AVALANCHE (ms)
FDP085N10A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
o
ZθJC
(t), Thermal
Response
Thermal
Response
[ZθJC[ ]C/W]
Figure 13. Transient Thermal Response Curve
1
0.5
PDM
0.2
0.1
t1
0.1
0.01
Single pulse
0.005 -5
10
o
1. ZθJC(t) = 0.8 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.02
0.01
t2
*Notes:
0.05
-4
10
-3
-2
10
10
t1, Rectangular
PulseDuration
Duration [sec]
[sec]
Rectangular
Pulse
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5
-1
10
1
FDP085N10A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDP085N10A — N-Channel PowerTrench® MOSFET
IG = const.
Figure 14. Gate Charge Test Circuit & Waveform
VDS
RG
V
10V
GS
RL
VDS
90%
VDD
VGS
DUT
VGS
10%
td(on)
tr
t on
td(off)
t off
Figure 15. Resistive Switching Test Circuit & Waveforms
VGS
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
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6
tf
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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7
FDP085N10A — N-Channel PowerTrench® MOSFET
DUT
FDP085N10A — N-Channel PowerTrench® MOSFET
Mechanical Dimensions
Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB (Delta)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any
manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions,
specifically the warranty therein, which covers ON Semiconductor products.
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8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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