MOSFET - N-Channel,
Shielded Gate PowerTrench
120 V, 2.95 mW, 181 A
FDP2D9N12C
Features
•
•
•
•
•
•
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Shielded Gate MOSFET Technology
Max RDS(on) = 2.95 mW at VGS = 10 V, ID = 181 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
100% UIL Tested
These Devices are Pb−Free, Halogen−Free and are RoHS Compliant
V(BR)DSS
RDS(ON) MAX
ID MAX
120 V
2.95 mW @ 10 V
181 A
Typical Applications
D
• Synchronous Rectification for ATX / Server / Telecom PSU
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
120
V
Gate−to−Source Voltage
VGS
±20
V
ID
181
A
PD
179
W
ID
19.5
A
PD
2.0
W
IDM
933
A
TJ, Tstg
−55 to
+150
°C
IS
172
A
EAS
490
mJ
TL
300
°C
Parameter
Continuous Drain
Current RqJC (Note 2)
Power Dissipation
RqJC (Note 2)
Continuous Drain
Current RqJA
(Notes 1, 2)
Power Dissipation
RqJA (Notes 1, 2)
Pulsed Drain Current
Steady
State
Steady
State
TC = 25°C
S
N−CHANNEL MOSFET
MARKING
DIAGRAM
4
4
Drain
TA = 25°C
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IAV = 99 Apk, L = 0.1 mH)
Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using a 1 in2 pad size, 1 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
1
TO−220
CASE 221A
STYLE 5
2
&Z&3&K
FDP
2D9N12C
1
Gate
3
3
Source
2
Drain
&Z
&3
&K
= Assembly Plant Code
= Date Code (Year & Week)
= Lot
ORDERING INFORMATION
Device
Package
Shipping†
FDP2D9N12C
TO−220
(Pb−Free)
50 / Tube,
800 / Box
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2018
October, 2019 − Rev. 1
1
Publication Order Number:
FDP2D9N12C/D
FDP2D9N12C
THERMAL RESISTANCE RATINGS
Symbol
Max
Unit
Junction−to−Case − Steady State (Note 2)
Parameter
RqJC
0.7
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
62.5
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
120
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 250 mA, ref to 25°C
VGS = 0 V,
VDS = 96 V
V
46
mV/°C
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 664 mA
VGS(TH)/TJ
ID = 664 mA, ref to 25°C
−8.6
RDS(on)
VGS = 10 V, ID = 95 A
2.7
2.95
mW
VGS = 6 V, ID = 57 A
3.5
5.1
mW
gFS
VDS = 10 V, ID = 50 A
215
TJ = 25°C
1
TJ = 150°C
mA
100
mA
±100
nA
4.0
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
2.0
3.1
mV/°C
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
7910
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
32
Gate−Resistance
RG
0.78
1.9
Total Gate Charge
QG(TOT)
98
137
Threshold Gate Charge
QG(TH)
23
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
15
Plateau Voltage
VGP
5.0
V
Output Charge
QOSS
325
nC
VGS = 0 V, f = 1 MHz, VDS = 60 V
VGS = 10 V, VDS = 60 V; ID = 95 A
VDD = 60 V, VGS = 0 V
12883
3825
pF
W
nC
35
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
43
VGS = 10 V, VDD = 60 V,
ID = 95 A, RG = 6.0 W
tf
31
ns
72
24
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, IS = 95 A
TJ = 25°C
0.9
1.3
V
88
VGS = 0 V, VDD = 60 V
dIS/dt = 300 A/ms, IS = 100 A
QRR
48
ns
40
500
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
FDP2D9N12C
TYPICAL CHARACTERISTICS
300
ID, DRAIN CURRENT (A)
7.0 V
10 V
8V
5
6.0 V
RDS(on), NORMALIZED DRAIN−TO−
SOURCE ON−RESISTANCE
350
5.5 V
250
200
150
VGS = 5.0 V
100
50
0
4
3
2
5
5.5 V
4
3
8.0 V
6.0 V
2
7.0 V
1
0
10 V
0
150
100
50
200
250
300
350
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
20
2.0
RDS(on), ON−RESISTANCE (mW)
ID = 100 A
VGS = 10 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−75 −50
350
−25
0
25
50
75
100
125
TJ = 25°C
4
5
6
7
8
9
10
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
TJ = 25°C
TJ = 150°C
3
TJ = 125°C
5
Figure 3. Normalized On−Resistance vs.
Junction Temperature
100
0
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
200
50
15
TJ, JUNCTION TEMPERATURE (°C)
250
150
ID = 100 A
0
150
VDS = 5 V
300
ID, DRAIN CURRENT (A)
1
IS, REVERSE DRAIN CURRENT (A)
RDS(on), NORMALIZED DRAIN−TO−SOURCE RESISTANCE
0
VGS = 5.0 V
TJ = −55°C
4
5
6
10
1
0.1 TJ = 150°C
0.01
0.001
7
VGS = 0 V
100
TJ = −55°C
TJ = 25°C
0
0.2
0.4
0.6
0.8
1.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source−to−Drain Diode Forward
Voltage vs. Source Current
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3
1.2
FDP2D9N12C
TYPICAL CHARACTERISTICS
10
VDD = 80 V
6
4
COSS
1K
100
10
2
0
CISS
10K
VDD = 60 V
CAPACITANCE (pF)
8
VGS (V)
100K
VDD = 40 V
20
0
40
80
60
1
100
CRSS
f = 1 MHz
VGS = 0 V
1
0.1
100
10
CHARGE (nC)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain−to−Source
Voltage
100
PEAK TRANSIENT POWER (W)
IAS, AVALANCHE CURRENT (A)
1M
TJ = 25°C
TJ = 100°C
TJ = 125°C
10
1
0.001
0.01
0.1
100
10
1
100K
10K
1K
100
10
0.00001
1000
0.0001
0.001
0.01
0.1
1
tAV, TIME IN AVALANCHE (mS)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Peak Power
200
1000
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT(A)
VGS = 10 V
150
VGS = 6 V
100
50
1 ms
100
25
50
75
100
125
10
TC = 25°C
Single Pulse
RqJC = 0.7°C/W
RDS(on) Limit
Thermal Limit
Package Limit
1
0.1
150
10 ms
100 ms/DC
RqJC = 0.7°C/W
0
100 ms
10 ms
0.1
1
10
100
TC, CASE TEMPERATURE (°C)
Figure 11. Drain Current vs. Case Temperature
Figure 12. Forward Bias Safe Operating Area
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4
FDP2D9N12C
TYPICAL CHARACTERISTICS
ZqJA, NORMALIZED THERMAL
IMPEDANCE (°C/W)
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
0.001
Single Pulse
0.00001
0.0001
0.001
0.01
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
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5
0.1
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AJ
DATE 05 NOV 2019
SCALE 1:1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
BASE
EMITTER
COLLECTOR
EMITTER
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 7:
PIN 1.
2.
3.
4.
CATHODE
ANODE
CATHODE
ANODE
STYLE 8:
PIN 1.
2.
3.
4.
CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
STYLE 10:
PIN 1.
2.
3.
4.
GATE
SOURCE
DRAIN
SOURCE
STYLE 11:
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
SOURCE
STYLE 12:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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