FDP4020P

FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC-DC converters requiring P-Channel. • -16 A, -20 V. RDS(on) = 0.08 Ω @ VGS = -4.5 V RDS(on) = 0.11 Ω @ VGS = -2.5 V. • Critical DC electrical parameters specified at elevated temperature. • High density cell design for extremely low RDS(on). • TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. • 175°C maximum junction temperature rating. S G D A bsolute M axim um Ratings Sym bol T A = 25°C unless otherw ise noted FD P4020P Param eter FD B 4020P U nits V DSS Drain-S ource V oltage -20 V V G SS G ate-S ource V oltage ID Drain Current ±8 -16 A PD Total P ower Dissipation @ T C = 25 ° C T J , T STG Derate above 25 ° C O perating and S torage Junction Tem perature Range - Continuous - P ulsed V -48 37.5 W 0.25 -65 to +175 W /° C °C Therm al C haracteristics R θ JC Therm al Resistance, Junction-to- Case R θ JA Therm al Resistance, Junction-to- A m bient 4 (N ote 1) 62.5 40 ° C/W ° C/W Package O utlines and O rdering Inform ation D evice M arking D evice R eel Size Tape W idth Q uantity FDP 4020P FDP 4020P 13’’ 12m m 2500 units 2000 Fairchild Semiconductor International FDP4020P Rev. B FDP4020P September 2000 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆T J IDSS IGSSF IGSSR Drain-Source Breakdown VGS = 0 V, ID = -250 µA Voltage Breakdown Voltage ID = -250 µA, Referenced to 25°C Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse On Characteristics -20 V mV/°C -28 VGS = 8 V, VDS = 0 V 100 µA nA VGS = -8 V, VDS = 0 V -100 nA -1 (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA ∆VGS(th) ∆T J RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 µA, Referenced to 25°C ID(on) On-State Drain Current VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -8 A 14 VDS = -10 V, VGS = 0 V, f = 1.0 MHz 665 pF 270 pF 70 pF -0.4 -0.58 -1 VGS = -4.5 V,ID = -8 A, VGS = -4.5 V,ID = -8 A,TJ=125°C VGS = -2.5 V,ID = -7 A 0.068 0.098 0.096 V mV/°C 2 0.08 0.13 0.110 -20 Ω A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics (Note 2) VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 50 80 ns tf Turn-Off Fall Time 29 45 ns Qg Total Gate Charge 9.5 13 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -5 V, ID = -16 A, VGS = -4.5 V 8 16 ns 24 38 ns 1.3 nC 2.2 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current (Note 2) -16 ISM Maximum Pulsed Drain-Source Diode Forward Current (Note 2) -48 VSD Drain-Source Diode Forward Voltage (Note 2) -1.2 VGS = 0 V, IS = -16 A A V Notes: 1. RθJA is the sum of the juntion-to-case and case-to-ambient thermal resistance.For T0-263 the device is mounted on circuit board with a 1in2 pad of 2 oz. copper. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDP4020P Rev. B FDP4020P Electrical Characteristics FDP4020P Typical Characteristics 40 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -4.5V -4.0V 32 -3.5V -3.0V 24 16 -2.5V 8 -2.0V 0 1.8 VGS = -2.0V 1.6 -2.5V 1.4 -3.0V 1.2 -3.5V -4.0V 0.8 0 2 4 6 8 10 0 5 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 20 25 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 1.8 ID = -16A VGS = -4.5V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 -ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 ID = -8A 0.16 0.12 o TA = 125 C 0.08 o TA = 25 C 0.04 0 0.6 -50 -25 0 25 50 75 100 125 150 1.5 175 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 100 TA = -55 C -IS, REVERSE DRAIN CURRENT (A) o VDS = -5V -ID, DRAIN CURRENT (A) -4.5V 1 o 25 C o 16 125 C 12 8 4 VGS = 0V 1 o TA = 125 C o 25 C o -55 C 0.01 0.0001 0 0 0.5 1 1.5 2 2.5 3 3.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.4 0.8 1.2 1.6 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP4020P Rev. B (continued) -VGS, GATE-SOURCE VOLTAGE (V) 5 1400 VDS = -5V ID = -16A FDP4020P Typical Characteristics f = 1 MHz VGS = 0 V 1200 -10V 4 CAPACITANCE (pF) -15V 3 2 1000 800 CISS 600 400 1 COSS 200 0 CRSS 0 0 3 6 9 12 0 4 Qg, GATE CHARGE (nC) 12 16 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 100 1000 RDS(ON) LIMIT SINGLE PULSE 100µs o RθJC = 4 C/W 800 o 1ms 10 TA = 25 C 10ms DC 100ms 1 POWER (W) -ID, DRAIN CURRENT (A) 8 VGS = -4.5V SINGLE PULSE o 600 400 200 RθJC = 4 C/W o TA = 25 C 0.1 0 1 10 100 0.0001 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.001 0.01 0.1 1 10 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 R θJC (t) = r(t) * R θJC R θJC = 4°C/W 0.1 0.2 0.2 P(pk) 0.05 t1 Single Pulse 0.1 t2 TJ - TA = P * R θJC (t) Duty Cycle, D = t 1 / t 2 0.05 0.0001 0.001 0.01 0.1 1 10 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient themal response will change depending on the circuit board design. FDP4020P Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST® FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1