FDP5800

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP5800 N-Channel Logic Level PowerTrench® MOSFET 60 V, 80 A, 6 mΩ Features Description • RDS(on) = 4.6 mΩ (Typ.) @ VGS = 10 V, ID = 80 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • High Performance Trench Technology for Extermly Low RDS(on) • Low Gate Charge Applications • High Power and Current Handing Capability • Power Tools • RoHS Compliant • Motor Drives and Uninterruptible Power Supplies • Synchronous Rectification • Battery Protection Circuit D GD S G TO-220 S MOSFET Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS Drain-Source Voltage Parameter VGSS Gate-Source Voltage - Continuous (TC = 25oC) - Continuous (TC = 100oC) ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy - Continuous (TA = 25oC) Power Dissipation PD TJ, TSTG - Pulsed (Note 1) (TC = 25oC) - Derate Above 25oC Operating and Storage Temperature Range FDP5800 60 Unit V ±20 V 80 A 80* A 14 A 320 A 652 mJ 242 1.61 W W/°C -55 to +175 °C FDP5800 Unit *Drain current limited by package. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. 0.62 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2006 Fairchild Semiconductor Corporation FDP5800 Rev. C2 1 o C/W www.fairchildsemi.com FDP5800 — N-Channel Logic Level PowerTrench® MOSFET December 2013 Part Number FDP5800 Top Mark FDP5800 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC= 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics Drain-Source Breakdown Voltage ID = 250 μA, VGS = 0 V, TJ =25oC 60 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 48 V VGS = 0 V -- -- 1 μA -- -- 500 μA IGSS Gate-Body Leakage Current, Forward VGS = ±20 V, VDS = 0 V -- -- ±100 nA VGS = VDS, ID = 250 μA BVDSS TJ = 150°C On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On Resistance 1.0 -- 2.5 V VGS = 10 V , ID = 80 A -- 4.6 6.0 mΩ VGS =4.5 V , ID = 80 A -- 5.9 7.2 mΩ VGS = 5 V , ID = 80 A -- 5.6 7.0 mΩ VGS =10 V, ID = 80 A, TJ = 175oC -- 10.4 12.6 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG VDS = 15 V,VGS = 0 V, f = 1 MHz -- 6890 9160 pF -- 750 1000 pF -- 295 445 pF Gate Resistance VGS = 0.5 V, f = 1 MHz -- 1.2 -- Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 V to 10 V -- 112 145 nC nC Qg(TH) Total Gate Charge at 5V VGS = 0 V to 5 V Qg(TH) Threshold Gate Charge VGS = 0 V to 1 V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge VDS = 30 V, ID = 80 A, Ig = 1 mA -- 58 -- -- 7.0 -- nC -- 23 -- nC -- 13 -- nC -- 18 -- nC Switching Characteristics (VGS = 10V) tON Turn-On Time -- 37 85 ns td(on) Turn-On Delay Time -- 18 46 ns tr Turn-On Rise Time -- 19 47 ns td(off) Turn-Off Delay Time -- 55 120 ns tf Turn-Off Fall Time -- 9 28 ns tOFF Turn-Off Time -- 64 138 ns VDD = 30 V, ID = 80 A, VGS = 10 V, RG = 1.5 Ω Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 80 A -- -- 1.25 V VGS = 0 V, ISD = 40 A -- -- 1.0 V VGS = 0 V, ISD = 60 A, dIF/dt = 100 A/μs -- 58 -- ns -- 106 -- nC Notes: 1: L = 1 mH, IAS = 36 A, VDD = 54 V, VGS = 10 V, RG = 25 Ω, Starting TJ = 25oC ©2006 Fairchild Semiconductor Corporation FDP5800 Rev. C2 2 www.fairchildsemi.com FDP5800 — N-Channel Logic Level PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1000 400 VDS = 6V * Notes : 1. 250μs Pulse Test o ID,Drain Current[A] ID,Drain Current[A] 2. TC = 25 C 100 VGS 10.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Top : 10 5 0.03 0.1 1 VDS,Drain-Source Voltage[V] o 150 C 10 o 25 C 1 o -55 C 0.1 3 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1 IS, Reverse Drain Current [A] 1000 VGS = 10V 5.0 2 3 4 VGS,Gate-Source Voltage[V] 5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 5.5 RDS(ON) [mΩ], Drain-Source On-Resistance 100 4.5 VGS = 20V VGS = 0V o 150 C 100 o 25 C 10 o 4.0 * Note : TJ = 25 C 0 40 80 120 ID, Drain Current [A] 160 1 0.2 200 Figure 5. Capacitance Characteristics 9000 Ciss 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 25V Capacitances [pF] 7500 6000 4500 * Note: 1. VGS = 0V 2. f = 1MHz Coss 3000 1500 100 -1 10 Crss 0 1 10 10 VDS, Drain-Source Voltage [V] ©2006 Fairchild Semiconductor Corporation FDP5800 Rev. C2 1.4 Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] 10000 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 3 VDS = 50V 6 4 2 0 30 VDS = 35V 8 * Note : ID = 80A 0 20 40 60 80 100 Qg, Total Gate Charge [nC] 120 www.fairchildsemi.com FDP5800 — N-Channel Logic Level PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.4 rDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -100 * Notes : 1. VGS = 0V 2. ID = 250μA -50 0 50 100 150 o TJ, Junction Temperature [ C] 0.8 * Notes : 1. VGS = 10V 2. ID = 80A -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 200 125 CURRENT LIMITED BY PACKAGE ID, Drain Current [A] 100μs 100 ID, Drain Current [A] 1.2 Figure 10. Maximum Drain Current vs. Case Temperature 500 1ms 10 10ms 100ms Operation in This Area is Limited by R DS(on) DC SINGLE PULSE o 0.1 1.6 0.4 -80 200 Figure 9. Maximum Safe Operating Area 1 2.0 TC = 25 C 100 75 50 25 o TJ = 175 C o RθJC = 0.62 C/W 0.01 0.1 1 10 VDS, Drain-Source Voltage [V] 0 25 100 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve D = 0.5 0.2 o (t), Thermal Response [ C/W] θJC ZθZJC (t),Thermal Response 1 0.1 0.1 0.05 PDM 0.02 t1 0.01 0.01 o 1. ZθJC(t) = 0.62 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 1E-3 -5 10 ©2006 Fairchild Semiconductor Corporation FDP5800 Rev. C2 t2 * Notes : -4 10 -3 -2 -1 0 10 10 10 10 t1, Square Wave Pulse Duration [sec] 4 1 10 2 10 www.fairchildsemi.com FDP5800 — N-Channel Logic Level PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP5800 — N-Channel Logic Level PowerTrench® MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2006 Fairchild Semiconductor Corporation FDP5800 Rev. C2 5 www.fairchildsemi.com FDP5800 — N-Channel Logic Level PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2006 Fairchild Semiconductor Corporation FDP5800 Rev. C2 6 www.fairchildsemi.com FDP5800 — N-Channel Logic Level PowerTrench® MOSFET Mechanical Dimensions Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 ©2006 Fairchild Semiconductor Corporation FDP5800 Rev. C2 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2006 Fairchild Semiconductor Corporation FDP5800 Rev. C2 8 www.fairchildsemi.com FDP5800 — N-Channel Logic Level PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ Sync-Lock™ F-PFS™ ® AX-CAP®* FRFET® ®* ® SM Global Power Resource PowerTrench BitSiC™ GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Programmable Active Droop™ Green FPS™ CorePLUS™ TinyBuck® ® QFET Green FPS™ e-Series™ CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® μSerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® STEALTH™ MillerDrive™ Fairchild Semiconductor® UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ SuperSOT™-3 mWSaver FACT® UniFET™ OptoHiT™ SuperSOT™-6 FAST® VCX™ OPTOLOGIC® SuperSOT™-8 FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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