FDP6035AL

FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 48 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14 mΩ @ VGS = 4.5 V • Critical DC electrical parameters specified at elevated temperature These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. • High performance trench technology for extremely low RDS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • 175°C maximum junction temperature rating It has been optimized for low gate charge, low RDS(ON) and fast switching speed. D D G G D G S TO-220 TO-263AB FDP Series S FDB Series Absolute Maximum Ratings Symbol S TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current 48 A – Continuous – Pulsed PD (Note 1) 180 52 W 0.3 W/°C –65 to +175 °C °C/W Total Power Dissipation @ TC = 25°C Derate above 25°C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 2.9 RθJA Thermal Resistance, Junction-to-Ambient 62.5 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6035AL FDB6035AL 13’’ 24mm 800 units FDP6035AL FDP6035AL Tube n/a 45 2003 Fairchild Semiconductor Corporation FDP6035AL/FDB6035AL Rev D(W) FDP6035AL/FDB6035AL July 2003 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 58 mJ 48 A Drain-Source Avalanche Ratings (Note 1) EAS IAS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 48 A Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ± 20 V, VDS = 0 V ± 100 nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) 30 V mV/°C 23 (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On– Resistance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C 1 1.9 3 V mV/°C –5 ID(on) On–State Drain Current VGS = 10 V, ID = 24 A VGS = 4.5 V, ID = 20 A VGS= 10 V, ID = 24 A, TJ=125°C VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 10V, ID = 24 A 68 S VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1250 pF 330 pF 155 pF VGS = 15 mV, f = 1.0 MHz 1.3 Ω VDD = 15V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 11 20 ns 7.9 10.2 13.0 12 14 21 60 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time 12 22 ns td(off) Turn–Off Delay Time 29 46 ns tf Turn–Off Fall Time 12 21 ns Qg Total Gate Charge 13 18 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 5 V ID = 48 A, 4.3 nC 5.5 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 24 A IF = 24 A, diF/dt = 100 A/µs (Note 1) 0.92 60 A 1.3 V 26 nS 15 nC Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDP6035AL/FDB6035AL Rev D(W) FDP6035AL/FDB6035AL Electrical Characteristics FDP6035AL/FDB6035AL Typical Characteristics 1.8 180 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V ID, DRAIN CURRENT (A) 150 5.0V 120 4.5V 90 4.0V 60 3.5V 30 VGS = 3.5V 3.5V 1.6 1.4 4.0V 4.5V 1.2 5.0V 6.0V 10V 1 3.0V 0 0.8 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 5 0 Figure 1. On-Region Characteristics. 80 100 0.030 ID = 24A VGS =10V RDS(ON), ON-RESISTANCE (OHM) ID = 24A 1.6 1.4 1.2 1 0.8 0.6 0.025 0.020 TA = 125oC 0.015 o TA = 25 C 0.010 0.005 -50 -25 0 25 50 75 100 125 o TJ, JUNCTION TEMPERATURE ( C) 150 175 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 90 1000 VDS = 5V IS, REVERSE DRAIN CURRENT (A) VGS = 0V 75 ID, DRAIN CURRENT (A) 40 60 ID, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 60 45 TA = 125oC -55oC 30 25oC 15 0 100 10 o TA = 125 C 1 25oC 0.1 -55oC 0.01 0.001 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 Figure 5. Transfer Characteristics. 4.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6035AL/FDB6035AL Rev D(W) FDP6035AL/FDB6035AL Typical Characteristics 2000 ID = 48A f = 1MHz VGS = 0 V VDS = 10V 20V 1600 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 15V 6 4 Ciss 1200 800 Coss 2 400 0 0 Crss 0 5 10 15 Qg, GATE CHARGE (nC) 20 0 25 Figure 7. Gate Charge Characteristics. 30 5000 P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 1000 10µs RDS(ON) LIMIT 100 100µs 1mS 10mS 100mS DC 10 VGS = 10V SINGLE PULSE RθJC = 2.9oC/W TA = 25oC 1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJC = 2.9°C/W TA = 25°C 4000 3000 2000 1000 0 0.00001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 5 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJC(t) = r(t) * RθJC RθJC = 2.9 °C/W 0.2 0.1 P(pk 0.1 t1 t2 TJ - TA = P * RθJC(t) Duty Cycle, D = t1 / t2 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDP6035AL/FDB6035AL Rev D(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOSTM I2C™ TM EnSigna ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5