FDP6670AL/FDB6670AL
N-Channel Logic Level PowerTrench MOSFET
General Description
Features
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
• 80 A, 30 V
RDS(ON) = 6.5 mΩ @ VGS = 10 V
RDS(ON) = 8.5 mΩ @ VGS = 4.5 V
• Critical DC electrical parameters specified at
elevated temperature
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
• 175°C maximum junction temperature rating
It has been optimized for low gate charge, low RDS(ON)
and fast switching speed.
D
D
G
G
D
G
S
TO-220
TO-263AB
FDP Series
S
FDB Series
Absolute Maximum Ratings
Symbol
S
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
A
PD
Parameter
– Continuous
(Note 1)
80
– Pulsed
(Note 1)
240
68
W
0.45
W/°C
–65 to +175
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
2.2
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDB6670AL
FDB6670AL
13’’
24mm
800 units
FDP6670AL
FDP6670AL
Tube
n/a
45
2003 Fairchild Semiconductor Corporation
FDP6670AL/FDB6670AL Rev D(W)
FDP6670AL/FDB6670AL
May 2003
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ
Max
Units
114
mJ
80
A
Drain-Source Avalanche Ratings (Note 1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
IAR
Maximum Drain-Source Avalanche
Current
VDD = 15 V,
ID = 80 A
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V,
VGS = 0 V
1
µA
IGSS
Gate–Body Leakage
VGS = ± 20 V,
VDS = 0 V
± 100
nA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
30
V
mV/°C
24
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source On–
Resistance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
1
1.9
3
V
mV/°C
–5
ID(on)
On–State Drain Current
VGS = 10 V,
ID = 40 A
VGS = 4.5 V,
ID = 37 A
VGS= 10 V, ID = 40 A, TJ=125°C
VGS = 10 V,
VDS = 10 V
gFS
Forward Transconductance
VDS = 10V,
ID = 40 A
115
S
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
2440
pF
580
pF
250
pF
Ω
5.2
6.5
7.2
6.5
8.5
9.7
80
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VGS = 15 mV,
f = 1.0 MHz
1.4
VDD = 10V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
13
23
ns
13
23
ns
42
68
ns
(Note 2)
VDS = 15 V,
VGS = 5 V
ID = 40 A,
15
27
ns
24
33
nC
7
nC
9
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 40 A
IF = 40 A,
diF/dt = 100 A/µs
(Note 1)
0.9
80
A
1.3
V
34
nS
24
nC
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDP6670AL/FDB6670AL Rev D(W)
FDP6670AL/FDB6670AL
Electrical Characteristics
FDP6670AL/FDB6670AL
Typical Characteristics
1.8
100
ID, DRAIN CURRENT (A)
6.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.0V
VGS = 10V
4.5V
75
3.5V
50
25
3.0V
VGS = 3.5V
1.6
1.4
4.0V
4.5V
1.2
5.0V
6.0V
10V
1
0
0
0.5
1
1.5
0.8
2
0
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
40
60
ID, DRAIN CURRENT (A)
80
100
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.021
1.6
ID = 80A
VGS =10V
ID = 40A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
1.4
1.2
1
0.8
0.017
0.013
TA = 125oC
0.009
TA = 25oC
0.6
-50
-25
0
25
50
75
100
125
0.005
150
2
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
1000
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 10V
ID, DRAIN CURRENT (A)
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
80
60
40
TA = 125oC
25oC
20
-55oC
0
100
TA = 125oC
10
25oC
1
-55oC
0.1
0.01
0.001
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6670AL/FDB6670AL Rev D(W)
4000
ID = 80A
f = 1MHz
VGS = 0 V
8
VDS = 10V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
6
15V
20V
4
3000
Ciss
2000
Coss
1000
2
Crss
0
0
0
10
20
30
Qg, GATE CHARGE (nC)
40
50
0
Figure 7. Gate Charge Characteristics.
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
5000
P(pk), PEAK TRANSIENT POWER (W)
1000
10µs
RDS(ON) LIMIT
100
100µs
1mS
10mS
100mS
DC
VGS = 10V
SINGLE PULSE
RθJA = 2.2oC/W
10
TA = 25oC
1
0.1
1
10
100
SINGLE PULSE
RθJC = 2.2°C/W
TA = 25°C
4000
3000
2000
1000
0
0.00001
0.0001
0.001
VDS, DRAIN-SOURCE VOLTAGE (V)
0.01
0.1
1
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
5
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJC(t) = r(t) * RθJA
RθJA = 2.2 °C/W
0.2
0.1
P(pk
0.1
t1
t2
0.05
0.02
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
FDP6670AL/FDB6670AL Rev D(W)
FDP6670AL/FDB6670AL
Typical Characteristics
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I3
