FDP75N08A
N-Channel UniFETTM MOSFET
75 V, 75 A, 11 mΩ
Description
Features
•
•
•
•
•
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
75 A, 75 V, RDS(on) = 11 mΩ @ VGS = 10 V
Low Gate Charge (Typ. 145 nC)
Low Crss (Typ. 86 pF)
Fast Switching
Improved dv/dt Capability
D
GD
S
G
TO-220
S
Absolute Maximum Ratings
Symbol
TC = 25°C unless otherwise noted.
Parameter
FDP75N08A
Unit
VDSS
Drain-Source Voltage
75
V
ID
Drain Current
- Continuous (TC = 25°C)
75
A
IDM
Drain Current
- Pulsed
- Continuous (TC = 100°C)
47
A
(Note 1)
300
A
± 20
V
1738
mJ
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
75
A
EAR
Repetitive Avalanche Energy
(Note 1)
13.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
300
°C
- Derate Above 25°C
4.5
V/ns
137
W
1.09
W/°C
-55 to +150
°C
Thermal Characteristics
Symbol
Parameter
FDP75N08A
Unit
RθJC
Thermal Resistance, Junction-to-Case, Max.
0.91
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
62.5
°C/W
©2006 Fairchild Semiconductor Corporation
FDP75N08A Rev. C0
1
www.fairchildsemi.com
FDP75N08A — N-Channel UniFETTM MOSFET
December 2013
Device Marking
FDP75N08A
Device
FDP75N08A
Electrical Characteristics
Symbol
Package
TO-220
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
TC = 25°C unless otherwise noted.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
75
--
--
V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature Coefficient
ID = 250 µA, Referenced to 25°C
--
0.6
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 75 V, VGS = 0 V
--
--
1
µA
VDS = 60 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 37.5 A
--
9.4
11
mΩ
gFS
Forward Transconductance
VDS = 40 V, ID = 37.5 A
--
15
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
3437
4468
pF
--
738
959
pF
--
86
129
pF
--
43
95
ns
--
212
434
ns
--
273
556
ns
--
147
303
ns
--
80
104
nC
--
20
--
nC
--
24
--
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
VDD = 37.5 V, ID = 75A,
RG = 25 Ω
(Note 4)
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 60 V, ID = 75A,
VGS = 10 V
(Note 4)
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
75
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
300
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 75 A
--
--
1.4
V
trr
Reverse Recovery Time
62
--
ns
Reverse Recovery Charge
VGS = 0 V, IS = 75 A,
dIF / dt = 100 A/µs
--
Qrr
--
145
--
nC
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 206 µH, IAS = 75 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
©2006 Fairchild Semiconductor Corporation
FDP75N08A Rev. C0
2
www.fairchildsemi.com
FDP75N08A — N-Channel UniFETTM MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0V
9.0V
7.5V
7.0V
6.5v
6.0V
5.5V
5.0V
Bottom : 4.5V
2
10
100
ID, Drain Current [A]
ID, Drain Current [A]
Top:
0
150 C
0
-55 C
0
25 C
10
* Note :
1. VDS=40V
2. 250µs Pulse Test
* Note :
1. 250µs Pulse Test
0
2. TC=25 C
1
1
10
0
2
1
10
10
8
6
4
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.011
IDR, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
0.012
VGS = 10V
0.010
0.009
VGS = 20V
0.008
o
* Note : TJ = 25 C
2
10
0
150 C
0
25 C
1
10
* Note :
1. VGS=0V
2. 250µs Pulse Test
0
0.007
10
0
25
50
75
100
125
150
175
0.2
200
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VDS, Source-Drain Violtage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
Capacitances [pF]
5000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
Ciss
4000
3000
2000
* Note :
1. VGS = 0 V
2. f = 1 MHz
Crss
1000
0
-1
10
VDS = 15V
10
VGS, Gate-Source Voltage [V]
6000
VDS = 37.5V
VDS = 60V
8
6
4
2
* Note : ID = 75A
0
0
10
0
1
10
20
30
40
50
60
70
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
©2006 Fairchild Semiconductor Corporation
FDP75N08A Rev. C0
10
3
www.fairchildsemi.com
FDP75N08A — N-Channel UniFETTM MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
* Not s :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.0
1.5
1.0
* N tes :
1. VGS = 10 V
2. ID = 37.5 A
0.5
0.0
-100
200
-50
0
o
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
3
100
10
10 µs
80
ID, Drain Current [A]
ID, Drain Current [A]
100 µs
2
10
1ms
1
10ms
100ms
DC
Operation in This Area
is Limited by R DS(on)
10
0
10
* Notes :
o
1. TC = 25 C
60
40
20
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
10
1
0
25
2
10
10
50
75
100
125
150
o
VDS, Drain-SourceVoltage[V]
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
0
ZθJC, Thermal Response [oC/W]
10
D=0.5
0.2
0.1
-1
10
0.05
PDM
0.02
0.01
t1
t2
* Notes :
0
1. ZθJC(t) = 0.91 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
-2
10
single pulse
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
t1, Square Wave Pulse Duration [sec]
©2006 Fairchild Semiconductor Corporation
FDP75N08A Rev. C0
4
www.fairchildsemi.com
FDP75N08A — N-Channel UniFETTM MOSFET
Typical Performance Characteristics
FDP75N08A — N-Channel UniFETTM MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
t off
tf
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
tp
©2006 Fairchild Semiconductor Corporation
FDP75N08A Rev. C0
VDS (t)
VDD
DUT
tp
5
Time
www.fairchildsemi.com
FDP75N08A — N-Channel UniFETTM MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2006 Fairchild Semiconductor Corporation
FDP75N08A Rev. C0
6
www.fairchildsemi.com
FDP75N08A — N-Channel UniFETTM MOSFET
Mechanical Dimensions
Figure 16. TO-220, Molded, 3Lead, Jedec Variation AB
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2006 Fairchild Semiconductor Corporation
FDP75N08A Rev. C0
7
www.fairchildsemi.com
tm
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2006 Fairchild Semiconductor Corporation
FDP75N08A Rev. C0
8
www.fairchildsemi.com
FDP75N08A — N-Channel UniFETTM MOSFET
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