FDP75N08A

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP75N08A N-Channel UniFETTM MOSFET 75 V, 75 A, 11 mΩ Description Features • • • • • UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. 75 A, 75 V, RDS(on) = 11 mΩ @ VGS = 10 V Low Gate Charge (Typ. 145 nC) Low Crss (Typ. 86 pF) Fast Switching Improved dv/dt Capability D GD S G TO-220 S Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted. Parameter FDP75N08A Unit VDSS Drain-Source Voltage 75 V ID Drain Current - Continuous (TC = 25°C) 75 A IDM Drain Current - Pulsed - Continuous (TC = 100°C) 47 A (Note 1) 300 A ± 20 V 1738 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 75 A EAR Repetitive Avalanche Energy (Note 1) 13.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds 300 °C - Derate Above 25°C 4.5 V/ns 137 W 1.09 W/°C -55 to +150 °C Thermal Characteristics Symbol Parameter FDP75N08A Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.91 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W ©2006 Fairchild Semiconductor Corporation FDP75N08A Rev. C0 1 www.fairchildsemi.com FDP75N08A — N-Channel UniFETTM MOSFET December 2013 Device Marking FDP75N08A Device FDP75N08A Electrical Characteristics Symbol Package TO-220 Reel Size Tube Tape Width N/A Quantity 50 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 75 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 75 V, VGS = 0 V -- -- 1 µA VDS = 60 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 37.5 A -- 9.4 11 mΩ gFS Forward Transconductance VDS = 40 V, ID = 37.5 A -- 15 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 3437 4468 pF -- 738 959 pF -- 86 129 pF -- 43 95 ns -- 212 434 ns -- 273 556 ns -- 147 303 ns -- 80 104 nC -- 20 -- nC -- 24 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time VDD = 37.5 V, ID = 75A, RG = 25 Ω (Note 4) tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 60 V, ID = 75A, VGS = 10 V (Note 4) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 75 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 300 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 75 A -- -- 1.4 V trr Reverse Recovery Time 62 -- ns Reverse Recovery Charge VGS = 0 V, IS = 75 A, dIF / dt = 100 A/µs -- Qrr -- 145 -- nC Notes: 1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: L = 206 µH, IAS = 75 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3: ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4: Essentially independent of operating temperature typical characteristics. ©2006 Fairchild Semiconductor Corporation FDP75N08A Rev. C0 2 www.fairchildsemi.com FDP75N08A — N-Channel UniFETTM MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0V 9.0V 7.5V 7.0V 6.5v 6.0V 5.5V 5.0V Bottom : 4.5V 2 10 100 ID, Drain Current [A] ID, Drain Current [A] Top: 0 150 C 0 -55 C 0 25 C 10 * Note : 1. VDS=40V 2. 250µs Pulse Test * Note : 1. 250µs Pulse Test 0 2. TC=25 C 1 1 10 0 2 1 10 10 8 6 4 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.011 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.012 VGS = 10V 0.010 0.009 VGS = 20V 0.008 o * Note : TJ = 25 C 2 10 0 150 C 0 25 C 1 10 * Note : 1. VGS=0V 2. 250µs Pulse Test 0 0.007 10 0 25 50 75 100 125 150 175 0.2 200 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VDS, Source-Drain Violtage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 Capacitances [pF] 5000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss Ciss 4000 3000 2000 * Note : 1. VGS = 0 V 2. f = 1 MHz Crss 1000 0 -1 10 VDS = 15V 10 VGS, Gate-Source Voltage [V] 6000 VDS = 37.5V VDS = 60V 8 6 4 2 * Note : ID = 75A 0 0 10 0 1 10 20 30 40 50 60 70 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] ©2006 Fairchild Semiconductor Corporation FDP75N08A Rev. C0 10 3 www.fairchildsemi.com FDP75N08A — N-Channel UniFETTM MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Not s : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 * N tes : 1. VGS = 10 V 2. ID = 37.5 A 0.5 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 3 100 10 10 µs 80 ID, Drain Current [A] ID, Drain Current [A] 100 µs 2 10 1ms 1 10ms 100ms DC Operation in This Area is Limited by R DS(on) 10 0 10 * Notes : o 1. TC = 25 C 60 40 20 o 2. TJ = 150 C 3. Single Pulse -1 10 0 10 1 0 25 2 10 10 50 75 100 125 150 o VDS, Drain-SourceVoltage[V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 0 ZθJC, Thermal Response [oC/W] 10 D=0.5 0.2 0.1 -1 10 0.05 PDM 0.02 0.01 t1 t2 * Notes : 0 1. ZθJC(t) = 0.91 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) -2 10 single pulse -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] ©2006 Fairchild Semiconductor Corporation FDP75N08A Rev. C0 4 www.fairchildsemi.com FDP75N08A — N-Channel UniFETTM MOSFET Typical Performance Characteristics FDP75N08A — N-Channel UniFETTM MOSFET Figure 12. Gate Charge Test Circuit & Waveform 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD ID (t) tp ©2006 Fairchild Semiconductor Corporation FDP75N08A Rev. C0 VDS (t) VDD DUT tp 5 Time www.fairchildsemi.com FDP75N08A — N-Channel UniFETTM MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2006 Fairchild Semiconductor Corporation FDP75N08A Rev. C0 6 www.fairchildsemi.com FDP75N08A — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO-220, Molded, 3Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 ©2006 Fairchild Semiconductor Corporation FDP75N08A Rev. C0 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2006 Fairchild Semiconductor Corporation FDP75N08A Rev. C0 8 www.fairchildsemi.com FDP75N08A — N-Channel UniFETTM MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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