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FDP8447L
tm
N-Channel PowerTrench® MOSFET
40V, 50A, 8.7mΩ
Features
General Description
Max rDS(on) = 8.7mΩ at VGS = 10V, ID = 14A
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench technology to deliver
low rDS(on) and optimized BVDSS capability to offer superior
performance benefit in the application.
Max rDS(on) = 11.2mΩ at VGS = 4.5V, ID = 11A
Fast Switching
RoHS Compliant
Applications
Inverter
Power Supplies
D
G
G
D
S
TO-220
FDP Series
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25°C
-Continuous (Silicon limited)
TC = 25°C
-Continuous
TA = 25°C
PD
TJ, TSTG
Units
V
±20
V
50
65
(Note 1)
-Pulsed
12
A
100
Drain-Source Avalanche Energy
EAS
Ratings
40
(Note 3)
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
153
60
(Note 1)
Operating and Storage Junction Temperature Range
2
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
2.1
(Note 1)
62.5
°C/W
Package Marking and Ordering Information
Device Marking
FDP8447L
Device
FDP8447L
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
Package
TO-220AB
1
Reel Size
Tube
Tape Width
N/A
Quantity
50units
www.fairchildsemi.com
FDP8447L N-Channel PowerTrench® MOSFET
May 2007
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
40
ID = 250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 32V,
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
V
34
mV/°C
1
µA
±100
nA
3
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
-6
VGS = 10V, ID = 14A
7.7
8.7
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5V, ID = 11A
8.9
11.2
VGS = 10V, ID = 14A, TJ = 125°C
12.1
13.7
gFS
Forward Transconductance
VDD = 5V, ID = 14A
1
1.7
mV/°C
74
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 20V, VGS = 0V,
f = 1MHz
f = 1MHz
1880
2500
pF
245
325
pF
150
225
pF
Ω
1.4
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to 10V
Qg
Total Gate Charge
VGS = 0V to 5V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 20V, ID = 14A,
VGS = 10V, RGEN = 6Ω
VDD = 20V,
ID = 14A
9
18
ns
7
14
ns
28
45
ns
4
10
ns
35
49
nC
19
27
nC
4.7
nC
6.2
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 14A
(Note 2)
IF = 14A, di/dt = 100A/µs
0.8
1.2
V
28
42
ns
22
33
nC
NOTES:
1. RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V.
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
2
www.fairchildsemi.com
FDP8447L N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
100
3.0
80
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID, DRAIN CURRENT (A)
VGS = 4.5V
VGS = 4V
60
VGS = 3.5V
40
20
VGS = 3V
0
0
1
2
3
2.5
VGS = 3.5V
2.0
VGS = 4V
1.5
1.0
VGS = 4.5V
0
20
ID = 7A
rDS(on), DRAIN TO
1.2
1.0
0.8
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
80
100
20
ID = 14A
VGS = 10V
1.4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
16
TJ = 125oC
12
TJ = 25oC
8
4
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
150
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
100
100
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
80
ID, DRAIN CURRENT (A)
60
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
VDS = 5V
60
40
TJ = 25oC
20
TJ = 125oC
TJ = -55oC
0
1
40
ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
0.6
-50
VGS = 10V
0.5
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 3V
2
3
10
1
TJ = 125oC
TJ = 25oC
0.1
TJ = -55oC
0.01
0.001
0.0
4
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
VGS = 0V
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDP8447L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10000
ID = 14A
VDD = 10V
Ciss
8
VDD = 20V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 30V
6
4
1000
Coss
2
f = 1MHz
VGS = 0V
0
0
10
20
30
10
0.1
40
1
Figure 7. Gate Charge Characteristics
40
Figure 8. Capacitance vs Drain
to Source Voltage
80
ID, DRAIN CURRENT (A)
20
10
TJ = 25oC
TJ =
125oC
60
VGS = 10V
40
Limited by Package
VGS = 4.5V
20
o
RθJC = 2.1 C/W
1
0.01
0.1
1
10
0
25
100 300
50
75
tAV, TIME IN AVALANCHE(ms)
100
125
150
o
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
1000
P(PK), PEAK TRANSIENT POWER (W)
300
100
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
IAS, AVALANCHE CURRENT(A)
Crss
100
100us
10
THIS AREA IS
LIMITED BY rDS(on)
1ms
10ms
100ms
SINGLE PULSE
TJ = MAX RATED
1
RθJC = 2.1oC/W
TC = 25oC
0.1
0.1
1
10
100
SINGLE PULSE
RθJC = 2.1oC/W
TC = 25oC
100
50
-4
10
-3
10
-2
10
-1
10
0
10
1
10
t, PULSE WIDTH (s)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
VGS = 10V
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDP8447L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJC
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
o
RθJC = 2.1 C/W
0.05
-4
10
-3
10
-2
-1
10
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
5
www.fairchildsemi.com
FDP8447L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided in
the labeling, can be reasonably expected to result in a significant
injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
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Definition
Advance Information
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This datasheet contains the design specifications for product
development. Specifications may change in any manner
without notice.
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This datasheet contains preliminary data; supplementary data will
be published at a later date. Fairchild Semiconductor reserves the
right to make changes at any time without notice to improve
design.
No Identification Needed
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Semiconductor reserves the right to make changes at any time
without notice to improve design.
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Not In Production
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor.The datasheet is printed
for reference information only.
Rev. I27
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
www.fairchildsemi.com
FDP8447L N-Channel PowerTrench® MOSFET
tm
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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