FDPC4044

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Common Drain N-Channel PowerTrench® MOSFET 30 V, 27 A, 4.3 mΩ General Description Features This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow. FDPC4044 combines ON Semiconductor’s advanced PowerTrench® process with state of the art packaging process to minimize the on-state resistance. „ Max rS1S2(on) = 4.3 mΩ at VGS = 10 V, IS1S2 = 27 A „ Max rS1S2(on) = 6.4 mΩ at VGS = 4.5 V, IS1S2 = 23 A „ Pakage size/height: 3.3 x 3.3 x 0.8 mm „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing Applications „ Battery management „ Load switch „ RoHS Compliant „ Battery protection S1 S2 S2 S2 Pin 1 S1 G1 S1 S1 G2 D2 D1 G1 Pin 1 G2 Top Bottom S2 Power Clip 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VS1S2 Source1 to Source2 Voltage VGS Gate to Source Voltage IS1S2 PD TJ, TSTG Parameter Source1 to Source2 Current -Continuous TA = 25 °C -Pulsed Ratings 30 Units V V (Note 3) ±20 (Note 1a) 27 (Note 2) 120 Power Dissipation TA = 25 °C (Note 1a) 2.7 Power Dissipation TA = 25 °C (Note 1b) 1 Operating and Storage Junction Temperature Range A W -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 47 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 127 °C/W Package Marking and Ordering Information Device Marking 40CF Device FDPC4044 ©2013 Semiconductor Components Industries, LLC August-2017, Rev.3 Package Power Clip 33 Reel Size 13 ” Tape Width 12 mm Quantity 3000 units Publication Order Number: FDPC4044/D FDPC4044 Common Drain N-Channel PowerTrench® MOSFET FDPC4044 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics IS1S2 Zero Gate Voltage Source1 to Source2 Current VS1S2 = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = 20 V, VS1S2 = 0 V 100 nA V On Characteristics VGS(th) rS1S2(on) gFS Gate to Source Threshold Voltage Static Source1 to Source2 On Resistance Forward Transconductance VGS = VS1S2, IS1S2 = 250 μA 1.5 3 VGS =10 V, IS1S2 = 27 A 1.2 3.2 4.3 VGS = 4.5 V, IS1S2 = 23 A 4.6 6.4 VGS = 10 V, IS1S2 = 27 A, TJ = 125 oC 4.5 7 VS1S2 = 10 V, IS1S2 = 27 A 150 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VS1S2 = 15 V, VGS = 0 V, f = 1 MHz 2295 3215 pF 627 880 pF 66 95 pF ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VS1S2 = 15 V, IS1S2 = 27 A, VGS = 10 V, RGEN = 6 Ω 8.5 17 4.8 10 ns 32 52 ns tf Fall Time 5.2 10 ns Qg Total Gate Charge 35 49 nC Qgs Gate to Source1 Gate Charge Qgd Gate to Source2 “Miller” Charge VS1S2 = 15 V, IS1S2 = 27 A, VG1S1 = 10 V, VG2S2 = 0 V 5.7 nC 4.7 nC Source1 to Source2 Diode Characteristics Ifss Maximum Continuous Source1 to Source2 Diode Forward Current Vfss Source1 to Source2 Diode Forward Voltage VG1S1 = 0 V, VG2S2 = 4.5 V, Ifss = 27 A (Note 2) 0.8 1 A 1.2 V Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.127 °C/W when mounted on a minimum pad of 2 oz copper. a. 47 °C/W when mounted on a 1 in2 pad of 2 oz copper. 3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. www.onsemi.com 2 S2S S2F S1S S1F G2 S2S S2F S1S S1F G2 2. Pulse Test: Pulse Width < 300 us, Duty cycle < 2.0%. FDPC4044 Common Drain N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted VG1S1 = 10 V VG1S1 = 4.5 V VG1S1 = 4 V VG1S1 = 3.5 V 80 VG1S1 = 3 V 40 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VG2S2 = 4.5 V 0 0.0 0.5 1.0 1.5 2.0 IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) 120 120 VGS = 10 V VGS = 4.5 V VGS = 4 V 80 VGS = 3.5 V 40 VGS = 3 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 1.0 1.5 Figure 1. On-Region Characteristics Figure 2. On-Region Characteristics 3 4 VG1S1 = 3 V 2 VG1S1 = 4.5 V VG1S1 = 4 V VG1S1 = 3.5V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VG2S2 = 4.5 V VG1S1 = 10 V 0 0 40 80 120 NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) VGS = 3 V VGS = 3.5 V 2 VGS = 4 V VGS = 4.5 V 1 0 0 40 80 120 Figure 4. Normalized On-Resistance vs Source1 to Source2 Current and Gate Voltage 1.6 rS1S2(on), SOURCE1 TO 1.0 0.8 -50 SOURCE2 ON-RESISTANCE (mΩ) 20 IS1S2 = 27 A VGS = 10 V 1.2 0.6 -75 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) Figure 3. Normalized On-Resistance vs Source1 to Source2 Current and Gate Voltage 1.4 2.0 3 IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE 0.5 VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 15 IS1S2 = 27 A 10 TJ = 125 oC 5 TJ = 25 oC 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. On-Resistance vs Gate to Source Voltage Figure 5. Normalized On- Resistance vs Junction Temperature www.onsemi.com 3 10 FDPC4044 Common Drain N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 100 Ifss, REVERSE SOURCE1 TO SOURCE2 CURRENT (A) IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) 120 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VS1S2 = 5 V 80 TJ = 150 oC TJ = 25 oC 40 VG1S1 = 0 V, VG2S2 = 4.5 V 10 TJ = 150 oC 1 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0 1 2 3 TJ = -55 oC 0.001 0.0 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 Figure 8. Source1 to Source2 Diode Forward Voltage vs Source Current 10000 10 vG2S2 = 0 V, IS1S2 = 27 A Ciss 8 VS1S2 = 10 V CAPACITANCE (pF) VG1S1, GATE1 TO SOURCE1 VOLTAGE (V) Figure 7. Transfer Characteristics 6 VS1S2 = 15 V 4 VS1S2 = 20 V 1000 Coss Crss 100 2 f = 1 MHz VGS = 0 V 0 0 10 20 30 10 0.1 40 Qg, GATE CHARGE (nC) P(PK), PEAK TRANSIENT POWER (W) 100 us 10 1 ms 10 ms 100 ms 1s 10 s DC 0.1 0.01 THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED RθJA = 127 oC/W o TA = 25 C 0.001 0.01 0.1 CURVE BENT TO MEASURED DATA 1 10 30 Figure 10. Capacitance vs Source1 to Source2 Voltage 200 100 1 1 VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) Figure 9. Gate Charge Characteristics IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) 0.2 Vfss, BODY DIODE FORWARD VOLTAGE (V) 10 100200 2000 1000 SINGLE PULSE RθJA = 127 oC/W TA = 25 oC 100 10 1 0.1 -4 10 -3 10 -2 10 -1 10 1 10 100 t, PULSE WIDTH (sec) VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 1000 FDPC4044 Common Drain N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 127 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 5 100 1000 FDPC4044 Common Drain N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted www.onsemi.com 6 FDPC4044 Common Drain N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout FDPC4044 Common Drain N-Channel PowerTrench® MOSFET ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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