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MOSFET – Dual, N-Channel,
POWERTRENCH), Power
Clip, Asymmetric
25 V
FDPC8014AS
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General Description
This device includes two specialized N−Channel MOSFETs in a
dual package. The switch node has been internally connected to enable
easy placement and routing of synchronous buck converters. The
control MOSFET (Q1) and synchronous SyncFETt (Q2) have been
designed to provide optimal power efficiency.
PIN1
PIN1
Features
• Q1: N−Channel
Max rDS(on) = 3.8 mW at VGS = 10 V, ID = 20 A
♦ Max rDS(on) = 4.7 mW at VGS = 4.5 V, ID = 18 A
Q2: N−Channel
♦ Max rDS(on) = 1.0 mW at VGS = 10 V, ID = 40 A
♦ Max rDS(on) = 1.2 mW at VGS = 4.5 V, ID = 37 A
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in
Lower Switching Losses
MOSFET Integration Enables Optimum Layout for Lower Circuit
Inductance and Reduced Switch Node Ringing
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
♦
•
•
•
•
Top
Power Clip 5x6
PDFN8 5x6, 1.27P,
CASE 483AR
MARKING DIAGRAM
$Y&Z&3&K
FDPC
8014AS
FDPC8014AS
$Y
&Z
&3
&K
Applications
• Computing
• Communications
• General Purpose Point of Load
Bottom
= Specific Device Code
= ON semiconductor Logo
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digits Lot Run Traceability Code
PAD9
V+(HSD)
PIN DESCRIPTION
Pin
Name
1
HSG
2
GR
Description
GR
Gate Return
V+
High Side Drain
V+
3, 4, 9
V+ (HSD)
5, 6, 7
SW
Switching Node, Low Side Drain
8
LSG
Low Side Gate
10
LSG
HSG
High Side Gate
HSG
GND (LSS) Low Side Source
PAD10
GND(LSS)
SW
SW
SW
LSG
GR
SW
V+
SW
V+
SW
N−Channel MOSFET
ORDERING INFORMATION
See detailed ordering and shipping information on page 10 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
December, 2020 − Rev. 2
1
Publication Order Number:
FDPC8014AS/D
FDPC8014AS
MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Q1
Q2
Unit
VDS
Drain to Source Voltage
25 (Note 4)
25
V
VGS
Gate to Source Voltage
±12
±12
V
A
ID
Parameter
Drain Current
−Continuous
TC = 25°C (Note 5)
59
159
−Continuous
TC = 100°C (Note 5)
37
100
−Continuous
TA = 25°C
20 (Note 1a)
40 (Note 1b)
−Pulsed
(Note 3)
266
1116
EAS
Single Pulse Avalanche Energy
(Note 2)
73
294
mJ
PD
Power Dissipation for Single Operation
TC = 25°C
21
37
W
Power Dissipation for Single Operation
TA = 25°C
2.1 (Note 1a)
2.3 (Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Q1
Q2
Unit
6.0
3.3
°C/W
RqJC
Thermal Resistance, Junction to Case
RqJA
Thermal Resistance, Junction to Ambient
60 (Note 1a)
55 (Note 1b)
RqJA
Thermal Resistance, Junction to Ambient
130 (Note 1c)
120 (Note 1d)
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RθJC is guaranteed by
design while RθCA is determined by the user’s board design.
a. 60°C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 55°C/W when mounted on
a 1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
c. 130°C/W when mounted on
a minimum pad of 2 oz copper
d. 120°C/W when mounted on
a minimum pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Q1: EAS of 73 mJ is based on starting TJ = 25°C; N−ch: L = 3 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 24 A.
Q2: EAS of 294 mJ is based on starting TJ = 25°C; N−ch: L = 3 mH, IAS = 14 A, VDD = 25 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 46 A.
3. Pulsed Id please refer to Figure 11 and Figure 24 SOA graph for more details.
4. The continuous VDS rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 kHz frequency can be
applied.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
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2
FDPC8014AS
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Type
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain to Source Breakdown
Voltage
ID = 250 mA, VGS = 0 V
ID = 1 mA, VGS = 0 V
Q1
Q2
25
25
−
−
−
−
V
DBVDSS / DTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 mA, referenced to 25°C
ID = 10 mA, referenced to 25°C
Q1
Q2
−
−
24
25
−
−
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V
Q1
Q2
−
−
−
−
1
500
mA
mA
IGSS
Gate to Source Leakage Current,
Forward
VGS = 12 V / −8 V, VDS = 0 V
VGS = 12 V / −8 V, VDS = 0 V
Q1
Q2
−
−
−
−
±100
±100
nA
nA
BVDSS
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 mA
VGS = VDS, ID = 1 mA
Q1
Q2
0.8
1.0
1.3
1.5
2.5
3.0
V
DVGS(th) / DTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 mA, referenced to 25°C
ID = 10 mA, referenced to 25°C
Q1
Q2
−
−
−4
−3
−
−
mV/°C
Drain to Source On Resistance
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 18 A
VGS = 10 V, ID = 20 A, TJ =125°C
Q1
−
−
−
2.9
3.6
3.9
3.8
4.7
5.3
mW
VGS = 10 V, ID = 40 A
VGS = 4.5 V, ID = 37 A
VGS = 10 V, ID = 40 A , TJ =125°C
Q2
−
−
−
0.75
0.9
1.0
1.0
1.2
1.5
VDS = 5 V, ID = 20 A
VDS = 5 V, ID = 40 A
Q1
Q2
−
−
182
296
−
−
S
Q1:
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q2:
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
−
−
1695
6985
2375
9780
pF
Q1
Q2
−
−
495
2170
710
3040
pF
rDS(on)
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Q1
Q2
−
−
54
172
100
245
pF
Gate Resistance
Q1
Q2
0.1
0.1
0.4
0.4
1.2
1.2
W
Q1
Q2
−
−
8
16
16
29
ns
Q1
Q2
−
−
2
6
10
12
ns
Turn−Off Delay Time
Q1
Q2
−
−
24
48
38
76
ns
Fall Time
Q1
Q2
−
−
2
5
10
10
ns
Rg
SWITCHING CHARACTERISTICS
td(on)
tr
td(off)
tf
Turn−On Delay Time
Rise Time
Q1:
VDD = 13 V, ID = 20 A, RGEN = 6 W
Q2:
VDD = 13 V, ID = 40 A, RGEN = 6 W
Qg
Total Gate Charge
VGS = 0 V to 10 V
Q1: VDD = 13 V, ID = 20 A
Q2: VDD = 13 V, ID = 40 A
Q1
Q2
−
−
25
97
35
135
nC
Qg
Total Gate Charge
VGS = 0 V to 4.5 V
Q1: VDD = 13 V, ID = 20 A
Q2: VDD = 13 V, ID = 40 A
Q1
Q2
−
−
11
44
16
62
nC
Qgs
Gate to Source Gate Charge
Q1: VDD = 13 V, ID = 20 A
Q2: VDD = 13 V, ID = 40 A
Q1
Q2
−
−
3.4
14
−
−
nC
Qgd
Gate to Drain “Miller” Charge
Q1
Q2
−
−
2.2
9
−
−
nC
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3
FDPC8014AS
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
Symbol
Parameter
Test Condition
Type
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
IS
IS,Pulse
Source to Drain Diode Forward
Voltage
VGS = 0 V, IS = 20 A (Note 6)
VGS = 0 V, IS = 40 A (Note 6)
Q1
Q2
−
−
0.8
0.8
1.2
1.2
V
Diode Continuous Forward
Current
TC = 25°C
Q1
Q2
−
−
59
159
−
−
A
Q1
Q2
−
−
266
1116
−
−
A
Q1
Q2
−
−
25
44
40
70
ns
Q1
Q2
−
−
10
78
20
125
nC
Diode Pulse Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Q1: IF = 20 A, di/dt = 100 A/ms
Q2: IF = 40 A, di/dt = 300 A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
VGS = 10 V
60
VGS = 4.5 V
45
VGS = 3.5 V
VGS = 3 V
30
VGS = 2.5 V
15
0
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
0.0
0.2
0.4
0.6
0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.0
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
Figure 1. On Region Characteristics
1.6
1.5
ID = 20 A
VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−75
−50
5
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
4
VGS = 2.5 V
3
2
VGS = 3 V
1
VGS = 3.5 V
0
0
15
VGS = 4.5 V
30
45
ID, DRAIN CURRENT (A)
VGS = 10 V
60
75
Figure 2. Normalized On−Resistance vs. Drain Current
and Gate Voltage
−25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150
Figure 3. Normalized On Resistance vs. Junction
Temperature
rDS(on)
DRAIN TO SOURCE ON−RESISTANCE
ID, DRAIN CURRENT (A)
75
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (TJ = 25°C unless otherwise noted)
12
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
9
ID = 20 A
6
TJ = 125°C
3
TJ = 25°C
0
1
2
3
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On−Resistance vs. Gate to Source Voltage
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4
FDPC8014AS
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (TJ = 25°C unless otherwise noted) (continued)
VDS = 5 V
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
60
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
75
45
TJ = 150°C
30
TJ = 25°C
15
TJ = −55°C
0
1.0
1.5
2.0
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3.0
10
1
TJ = 150°C
TJ = 25°C
0.1
0.01
TJ = −55°C
0.2
0.4
0.6
0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.0
Figure 6. Source to Drain Diode Forward Voltage vs.
Source Current
10
10000
ID = 20 A
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
VGS = 0 V
0.001
0.0
Figure 5. Transfer Characteristics
VDD = 13 V
6
VDD = 10 V
4
VDD = 15 V
2
0
1000
Ciss
Coss
100
Crss
f = 1 MHz
VGS = 0 V
0
6
12
18
Qg, GATE CHARGE (nC)
24
10
0.1
30
Figure 7. Gate Charge Characteristics
25
60
ID, DRAIN CURRENT (A)
TJ = 25°C
10
TJ = 100°C
TJ = 125°C
1
0.001
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs. Drain to Source Voltage
30
IAS, AVALANCHE CURRENT (A)
100
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
100
Figure 9. Unclamped Inductive Switching Capability
50
VGS = 10 V
40
30
VGS = 4.5 V
20
10
0
25
RqJC = 6.0°C/W
50
75
100
125
TC, CASE TEMPERATURE (°C)
150
Figure 10. Maximum Continuous Drain Current vs.
Case Temperature
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FDPC8014AS
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (TJ = 25°C unless otherwise noted) (continued)
ID, DRAIN CURRENT (A)
10 ms
10
100 ms
1 ms
10 ms
100 ms/DC
THIS AREA IS LIMITED
BY rDS(on)
1
0.1
0.01
0.01
SINGLE PULSE
TJ = MAX RATED
RqJC = 6.0°C/W
CURVE BENT TO
TC = 25°C
MEASURED DATA
0.1
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
100
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Figure 11. Forward Bias Safe Operating Area
P(PK), PEAK TRANSIENT POWER (W)
10000
300
100
SINGLE PULSE
RqJC = 6.0°C/W
TC = 25°C
1000
100
10
−5
10
10
−4
−3
−2
10
10
t, PULSE WIDTH (s)
10
−1
1
Figure 12. Single Pulse Maximum Power Dissipation
2
1
0.1
0.01
0.001
−5
10
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
SINGLE PULSE
−4
10
t2
NOTES:
ZqJC (t) = r(t) x RqJC
RqJC = 6.0°C/W
DUTY FACTOR: D = t1 / t2
TJ − TC = PDM x ZqJC (t)
−3
−2
10
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Case Transient Thermal Response Curve
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6
−1
10
1
FDPC8014AS
ID, DRAIN CURRENT (A)
150
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (TJ = 25°C unless otherwise noted)
VGS = 10 V
VGS = 4.5 V
120
VGS = 3.5 V
VGS = 3 V
90
VGS = 2.5 V
60
30
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
0
0.0
0.2
0.4
0.6
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.8
8
6
4
0
ID = 40 A
VGS = 10 V
1.3
1.2
1.1
1.0
0.9
0.8
−75
−50
−25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (A)
120
VDS = 5 V
90
TJ = 125°C
TJ = 25°C
30
TJ = −55°C
0
1.0
30
60
90
ID, DRAIN CURRENT (A)
150
120
1.5
2.0
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
5
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
4
ID = 40 A
3
2
TJ = 125°C
1
TJ = 25°C
0
2
3
4
5
6
7
8
9
10
Figure 17. On−Resistance vs. Gate to Source Voltage
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
60
0
VGS, GATE TO SOURCE VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
Figure 16. Normalized On−Resistance vs.
Junction Temperature
150
VGS = 3.5 V VGS = 4.5 V VGS = 10 V
Figure 15. Normalized on−Resistance vs.
Drain Current and Gate Voltage
rDS(on)
DRAIN TO SOURCE ON−RESISTANCE
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
1.4
VGS = 3 V
2
Figure 14. On−Region Characteristics
1.5
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
VGS = 2.5 V
100
10
1
Figure 18. Transfer Characteristics
TJ = 125°C
TJ = 25°C
0.1
TJ = −55°C
0.01
0.001
0.0
3.0
VGS = 0 V
0.2
0.4
0.6
0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.0
Figure 19. Source to Drain Diode Forward Voltage vs.
Source Current
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FDPC8014AS
10000
10
ID = 40 A
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (TJ = 25°C unless otherwise noted) (continued)
VDD = 13 V
6
VDD = 10 V
4
VDD = 15 V
2
0
0
20
40
60
80
Qg, GATE CHARGE (nC)
100
0.1
100
Figure 20. Gate Charge Characteristics
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
25
160
TJ = 125°C
10
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
Crss
f = 1 MHz
VGS = 0 V
Figure 21. Capacitance vs. Drain to Source Voltage
100
TJ = 25°C
TJ = 100°C
128
VGS = 10 V
96
VGS = 4.5 V
64
32
RqJC = 3.3°C/W
1
0.001
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
0
25
1000
10 ms
100 ms
THIS AREA IS LIMITED
BY rDS(on)
1 ms
10 ms
100 ms/DC
SINGLE PULSE
TJ = MAX RATED
RqJC = 3.3°C/W
CURVE BENT TO
MEASURED DATA
TC = 25°C
0.1
0.1
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
70
Figure 24. Forward Bias Safe Operating Area
P(PK), PEAK TRANSIENT POWER (W)
10000
100
1
75
100
125
150
Figure 23. Maximum Continuous Drain Current vs.
Case Temperature
2000
1000
10
50
TC, CASE TEMPERATURE (°C)
Figure 22. Unclamped Inductive Switching Capability
ID, DRAIN CURRENT (A)
Coss
1000
SINGLE PULSE
RqJC = 3.3°C/W
TC = 25°C
1000
100
10
−5
10
10
−4
−3
−2
10
10
t, PULSE WIDTH (s)
10
−1
1
Figure 25. Single Pulse Maximum Power Dissipation
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FDPC8014AS
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (TJ = 25°C unless otherwise noted) (continued)
2
1
0.1
0.01
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
NOTES:
ZqJC (t) = r(t) x RqJC
RqJC = 3.3°C/W
DUTY FACTOR: D = t1 / t2
TJ − TC = PDM x ZqJC (t)
SINGLE PULSE
0.001
−5
10
t2
−4
10
−3
−2
10
10
t, RECTANGULAR PULSE DURATION (sec)
−1
10
1
Figure 26. Junction−to−Case Transient Thermal Response Curve
TYPICAL CHARACTERISTICS
SyncFET Schottky Body Diode Characteristics
50
CURRENT (A)
40
30
di/dt = 300 A/ms
20
10
0
−10
100
150
200
250
300 350
TIME (ns)
400
450
500
Figure 27. FDPC8014AS SyncFET Body Diode Reverse
Recovery Characteristic
IDSS, REVERSE LEAKAGE CURRENT (A)
Figure 27 shows the reverses recovery characteristic of the
FDPC8014AS.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
ON Semiconductor’s SyncFET process embeds a
Schottky diode in parallel with POWERTRENCH
MOSFET. This diode exhibits similar characteristics to a
discrete external Schottky diode in parallel with a MOSFET.
10
−2
10
−3
10
−4
10
−5
10
−6
TJ = 125°C
TJ = 100°C
TJ = 25°C
0
5
10
15
20
VDS, REVERSE VOLTAGE (V)
25
Figure 28. SyncFET Body Diode Reverse Leakage vs.
Drain−source Voltage
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9
FDPC8014AS
ORDERING INFORMATION
Device
Device Marking
Package
Reel Size
Tape Width
Shipping†
FDPC8014AS
FDPC8014AS
Power Clip 56
PDFN8 5x6, 1.27P
(Pb−Free)
13”
12 mm
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark and SyncFET is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the
United States and/or other countries.
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5x6, 1.27P
CASE 483AR
ISSUE A
DOCUMENT NUMBER:
DESCRIPTION:
98AON13666G
PQFN8 5x6, 1.27P
DATE 21 MAY 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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