MOSFET - Dual N‐Channel,
Asymmetric,
POWERTRENCH Power
Clip 25 V
FDPC8016S
www.onsemi.com
General Description
This device includes two specialized N−Channel MOSFETs in a
dual package. The switch node has been internally connected to enable
easy placement and routing of synchronous buck converters. The
control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been
designed to provide optimal power efficiency.
ELECTRICAL CONNECTION
Features
Q1: N-Channel
• Max RDS(on) = 3.8 mW at VGS = 10 V, ID = 20 A
• Max RDS(on) = 4.7 mW at VGS = 4.5 V, ID = 18 A
N-Channel MOSFET
Q2: N-Channel
PIN1
• Max RDS(on) = 1.4 mW at VGS = 10 V, ID = 35 A
• Max RDS(on) = 1.7 mW at VGS = 4.5 V, ID = 32 A
• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in
•
Top View
Bottom View
Power Clip 56
(PQFN8 5x6)
CASE 483AR
PIN ASSIGNMENT
Applications
• Computing
• Communications
• General Purpose Point of Load
HSG
GR
V+
V+
*
GND(LSS)
PAD9
•
Lower Switching Losses
MOSFET Integration Enables Optimum Layout for Lower Circuit
Inductance and Reduced Switch Node Ringing
These Devices are Pb−Free and are RoHS Compliant
LSG
SW
SW
SW
*PAD10 V+(HSD)
MARKING DIAGRAM
$Y&Z&3&K
05OD
15OD
$Y
&Z
&3
&K
05OD 15OD
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
November, 2019 − Rev. 6
1
Publication Order Number:
FDPC8016S/D
FDPC8016S
PINOUT DESCRIPTION
Pin
Name
Description
Pin
Name
Description
Pin
Name
Description
1
HSG
High Side Gate
3. 4, 10
V+(HSD)
High Side Drain
8
LSG
Low Side Gate
2
GR
Gate Return
5, 6, 7
SW
Switching Node,
Low Side Drain
9
GND(LSS)
Low Side Source
MOSFET MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified)
Symbol
Parameter
Q1
Q2
Unit
VDS
Drain to Source Voltage
25 (Note 5)
25 (Note 5)
V
VGS
Gate to Source Voltage
±12
±12
V
60
20 (Note 1a)
75
100
35 (Note 1b)
140
73
216
21
2.1 (Note 1a)
42
2.3 (Note 1b)
ID
Drain Current
Continuous (TC = 25°C)
Continuous (TA = 25°C)
Pulsed (TA = 25°C) (Note 4)
EAS
Single Pulsed Avalanche Energy (Note 3)
PD
Power Dissipation for Single Operation
(TC = 25°C)
(TA = 25°C)
TJ, TSTG
Operating and Storage Junction Temperature Range
A
mJ
W
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Q1
Q2
Unit
6.0
3.0
_C/W
RqJC
Thermal Resistance, Junction to Case
RqJA
Thermal Resistance, Junction to Ambient
60 (Note 1a)
55 (Note 1b)
_C/W
RqJA
Thermal Resistance, Junction to Ambient
130 (Note 1c)
120 (Note 1d)
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
05OD/15OD
FDPC8016S
Power Clip 56
13″
12 mm
3,000 Units
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ID = 1 mA, VGS = 0 V
Q1
Q2
25
25
−
−
−
−
V
DBVDSS/DTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25°C
ID = 10 mA, referenced to 25°C
Q1
Q2
−
−
24
28
−
−
mV/_C
IDSS
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V
Q1
Q2
−
−
−
−
1
500
mA
IGSS
Gate to Source Leakage Current,
Forward
VGS = 12 V / −8 V, VDS= 0 V
VGS = 12 V / −8 V, VDS= 0 V
Q1
Q2
−
−
−
−
±100
±100
nA
nA
BVDSS
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = VDS, ID = 1 mA
Q1
Q2
0.8
1.0
1.3
1.5
2.5
2.5
V
DVGS(th)/DTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25°C
ID = 10 mA, referenced to 25°C
Q1
Q2
−
−
−4
−3
−
−
mV/_C
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2
FDPC8016S
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Unit
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 18 A
VGS = 10 V, ID = 20 A,
TJ =125°C
Q1
−
−
−
2.8
3.4
3.9
3.8
4.7
5.3
mW
VGS = 10 V, ID = 35 A
VGS = 4.5 V, ID = 32 A
VGS = 10 V, ID = 35 A ,
TJ =125°C
Q2
−
−
−
1.1
1.3
1.5
1.4
1.7
1.9
VDS = 5 V, ID = 20 A
VDS = 5 V, ID = 35 A
Q1
Q2
−
−
182
241
−
−
S
Q1:
VDS = 13 V, VGS = 0 V,
f = 1 MHZ
Q2:
VDS = 13 V, VGS = 0 V,
f = 1 MHZ
Q1
Q2
−
−
1695
4715
2375
6600
pF
Q1
Q2
−
−
495
1195
710
1675
pF
Q1
Q2
−
−
54
159
100
290
pF
Q1
Q2
0.1
0.1
0.4
0.5
1.2
1.5
W
Q1
Q2
−
−
8
13
16
24
ns
Q1
Q2
−
−
2
4
10
10
ns
Q1
Q2
−
−
24
38
38
61
ns
Q1
Q2
−
−
2
3
10
10
ns
ON CHARACTERISTICS
RDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
SWITCHING CHARACTERISTICS
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Q1:
VDD = 13 V, ID = 20 A,
RGEN = 6 Ω
Q2:
VDD = 13 V, ID = 35 A,
RGEN = 6 Ω
Fall Time
Qg
Total Gate Charge
VGS = 0 V to 10 V
Q1: VDD = 13 V, ID = 20 A
Q2: VDD = 13 V, ID = 35 A
Q1
Q2
−
−
25
67
35
94
nC
Qg
Total Gate Charge
VGS = 0 V to 4.5 V
Q1: VDD = 13 V, ID = 20 A
Q2: VDD = 13 V, ID = 35 A
Q1
Q2
−
−
11
31
16
44
nC
Qgs
Gate to Source Gate Charge
Q1: VDD = 13 V, ID = 20 A
Q2: VDD = 13 V, ID = 35 A
Q1
Q2
−
−
3.4
10
−
−
nC
Qgd
Gate to Drain “Miller” Charge
Q1: VDD = 13 V, ID = 20 A
Q2: VDD = 13 V, ID = 35 A
Q1
Q2
−
−
2.2
6.3
−
−
nC
Source to Drain Diode Forward
Voltage
VGS = 0 V, IS = 20 A
VGS = 0 V, IS = 35 A (Note 2)
Q1
Q2
−
0.8
0.8
1.2
1.2
V
trr
Reverse Recovery Time
Q1
Q2
−
25
33
40
53
ns
Qrr
Reverse Recovery Charge
Q1:
IF = 20 A, di/dt = 100 A/μs
Q2:
IF = 35 A, di/dt = 200 A/μs
Q1
Q2
−
10
31
20
50
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqCA is determined
by the user’s board design.
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3
FDPC8016S
a) 60°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b) 55°C/W when mounted on
a 1 in2 pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
c) 130°C/W when mounted on
a minimum pad of 2 oz copper.
d) 120°C/W when mounted on
a minimum pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Q1:
EAS of 73 mJ is based on starting TJ = 25_C; N-ch: L = 3 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V,
100% tested at L = 0.1 mH, IAS = 24 A.
Q2:
EAS of 216 mJ is based on starting TJ = 25_C; N-ch: L = 3 mH, IAS = 12 A, VDD = 25 V, VGS = 10 V,
100% tested at L = 0.1 mH, IAS = 39 A.
4. Pulsed Id limited by junction temperature, td
