FDPF18N20FT-G

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Other names and brands may be claimed as the property of others. N-Channel UniFETTM FRFET® MOSFET 200 V, 18 A, 140 m � Description Features • RDS(on) = 129 mΩ (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 24 pF) • 100% Avalanche Tested • Improve dv/dt Capability • RoHS Compliant Applications • LCD/LED TV • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power Supply UniFETTM MOSFET is ON Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G D S TO-220F G MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage S Parameter FDPF18N20FT-G 200 Unit V ±30 V -Continuous (TC = 25oC) 18* -Continuous (TC = 100oC) 10.8* ID Drain Current IDM Drain Current (Note 1) 72* A EAS Single Pulsed Avalanche Energy (Note 2) 324 mJ IAR Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 10 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns - Pulsed (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL - Derate above 25oC A 35 W 0.27 W/oC -55 to +150 oC 300 o FDPF18N20FT-G Unit C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. 3.6 RθCS Thermal Resistance, Case to Sink, Typ. 0.5 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2012 Semiconductor Components Industries, LLC. September-2017, Rev. 3 1 oC/W Publication Order Number: FDPF18N20FT-G/D FDPF18N20FT-G N-Channel UniFETTM FRFET® MOSFET FDPF18N20FT-G Device Marking FDPF18N20FT Device FDPF18N20F-G Package TO-220F Eco Status Green/RoHS Reel Size - Tape Width - Quantity 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250µA, VGS = 0V, TJ = 25oC 200 - - V ID = 250µA, Referenced to 25oC - 0.2 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V - - 10 VDS = 160V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.12 0.14 Ω - 13.6 - S - 885 1180 pF - 200 270 pF - 24 35 pF - 20 26 nC - 5 - nC - 9 - nC - 16 40 ns - 50 110 ns - 50 110 ns - 40 90 ns µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 9A gFS Forward Transconductance VDS = 20V, ID = 9A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 160V, ID = 18A VGS = 10V (Note 4, 5) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 100V, ID = 18A RG = 25Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 18 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 72 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 18A - - 1.5 V trr Reverse Recovery Time - 80 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 18A dIF/dt = 100A/µs - 240 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2mH, IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics www.onsemi.com 2 (Note 4) FDPF18N20FT-G N-Channel UniFETTM FRFET® MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 30 VGS = 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] 50 o 10 150 C o 25 C *Notes: 1. 250µs Pulse Test 1 *Notes: 1. VDS = 20V 2. 250µs Pulse Test o 2. TC = 25 C 1 0.1 1 VDS,Drain-Source Voltage[V] 10 4 5 6 VGS,Gate-Source Voltage[V] 0.25 100 IS, Reverse Drain Current [A] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature RDS(ON) [Ω], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.20 VGS = 10V VGS = 20V 0.15 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TJ = 25 C 2. 250µs Pulse Test 0.10 0 10 20 30 ID, Drain Current [A] 40 1 0.0 50 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] 1000 *Note: 1. VGS = 0V 2. f = 1MHz Ciss Coss 500 VDS = 40V VDS = 100V VDS = 160V 8 6 4 2 Crss 0 0.1 2.0 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1500 0.4 0.8 1.2 1.6 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 2000 Capacitances [pF] 7 *Note: ID = 18A 0 1 10 VDS, Drain-Source Voltage [V] 30 0 www.onsemi.com 3 6 12 18 Qg, Total Gate Charge [nC] 24 FDPF18N20FT-G N-Channel UniFETTM FRFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area - FDP18N20F 100 20µs ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 100µs 10 1ms Operation in This Area is Limited by R DS(on) 1 DC *Notes: 0.1 0.9 o 1. TC = 25 C *Notes: 1. VGS = 0V 2. ID = 250µA 0.8 -100 10ms o 2. TJ = 150 C 3. Single Pulse 0.01 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1 200 10 100 VDS, Drain-Source Voltage [V] Figure 9. Maximum Drain Current vs. Case Temperature 20 12 8 4 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve - FDP18N20F 2 1 Thermal Response [ZθJC] ID, Drain Current [A] 16 0.5 0.2 0.1 PDM 0.1 t1 0.05 t2 0.02 *Notes: 0.01 0.01 o 1. ZθJC(t) = 3.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse -5 10 -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] www.onsemi.com 4 10 2 10 600 FDPF18N20FT-G N-Channel UniFETTM FRFET® MOSFET Typical Performance Characteristics (Continued) Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 FDPF18N20FT-G N-Channel UniFETTM FRFET® MOSFET Gate Charge Test Circuit & Waveform DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop www.onsemi.com 6 VDD FDPF18N20FT-G N-Channel UniFETTM FRFET® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDPF18N20FT-G N-Channel UniFETTM FRFET® MOSFET Mechanical Dimensions TO-220M03 Dimensions in Millimeters www.onsemi.com 7 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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