FDPF18N50

TM UniFET FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 45 nC) • Low Crss ( typical 25 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability D G G DS TO-220F TO-220 GD S FDP Series FDPF Series S Absolute Maximum Ratings Symbol Parameter FDP18N50 VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR FDPF18N50 500 V 18 10.8 (Note 1) Unit 18 * 10.8 * 72 * 72 A A A ±30 V (Note 2) 945 mJ Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 23 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (TC = 25°C) - Derate above 25°C 235 1.88 58 0.47 W W/°C -55 to +150 °C 300 °C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP18N50 FDPF18N50 Unit RθJC Thermal Resistance, Junction-to-Case 0.53 2.15 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2006 Fairchild Semiconductor Corporation FDP18N50 / FDPF18N50 Rev. A 1 www.fairchildsemi.com FDP18N50 / FDPF18N50 500V N-Channel MOSFET October 2006 Device Marking Device Package Reel Size Tape Width Quantity FDP18N50 FDP18N50 TO-220 - - 50 FDPF18N50 FDPF18N50 TO-220F - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.220 0.265 Ω -- 25 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 9A gFS Forward Transconductance VDS = 40V, ID = 9A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 2200 2860 pF -- 330 430 pF -- 25 40 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250V, ID = 18A RG = 25Ω (Note 4, 5) VDS = 400V, ID = 18A VGS = 10V (Note 4, 5) -- 55 120 ns -- 165 340 ns -- 95 200 ns -- 90 190 ns -- 45 60 nC -- 12.5 -- nC -- 19 -- nC 18 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 72 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 18A -- -- 1.4 V trr Reverse Recovery Time 500 -- ns Reverse Recovery Charge VGS = 0V, IS = 18A dIF/dt =100A/µs -- Qrr -- 5.4 -- µC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.2mH, IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FDP18N50 / FDPF18N50 Rev. A www.fairchildsemi.com FDP18N50 / FDPF18N50 500V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 2 Top : 1 10 ID, Drain Current [A] ID, Drain Current [A] 10 0 10 o 150 C 1 10 o 25 C o -55 C * Notes : 1. 250µs Pulse Test -1 * Notes : 1. VDS = 40V 2. 250µs Pulse Test o 10 2. TC = 25 C 0 -1 0 10 10 1 10 10 2 4 6 10 12 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2 10 0.6 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.5 VGS = 10V 0.4 0.3 VGS = 20V 0.2 o 1 10 150oC o * Notes : 1. VGS = 0V 2. 250µs Pulse Test 25 C * Note : TJ = 25 C 0 0.1 0 5 10 15 20 25 30 35 40 45 50 55 60 65 10 70 0.2 0.4 0.6 0.8 Figure 5. Capacitance Characteristics Coss Ciss 2000 1000 1.4 1.6 1.8 2.0 2.2 2.4 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] 3000 1.2 Figure 6. Gate Charge Characteristics 5000 4000 1.0 VSD, Source-Drain voltage [V] ID, Drain Current [A] Capacitances [pF] 8 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] * Note : 1. VGS = 0 V 2. f = 1 MHz Crss 10 VDS = 100V VDS = 250V 8 VDS = 400V 6 4 2 * Note : ID = 18A 0 -1 10 0 10 0 1 10 0 VDS, Drain-Source Voltage [V] 20 30 40 50 QG, Total Gate Charge [nC] 3 FDP18N50 / FDPF18N50 Rev. A 10 www.fairchildsemi.com FDP18N50 / FDPF18N50 500V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 2. ID = 250µA 0.9 0.8 -100 -50 0 50 100 150 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 9 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] o TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area - FDP18N50 Figure 9-2. Maximum Safe Operating Area - FDPF18N50 2 2 10 10 ID, Drain Current [A] ID, Drain Current [A] 10 µs 100 µs 1 ms 1 10 10 ms 100 ms DC Operation in This Area is Limited by R DS(on) 0 10 -1 1 ms 1 10 10 ms 100 ms Operation in This Area is Limited by R DS(on) 0 10 DC * Notes : -1 * Notes : 10 10 µs 100 µs 10 o 1. TC = 25 C o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse o 2. TJ = 150 C 3. Single Pulse -2 10 -2 0 1 10 10 2 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Currentvs. Case Temperature 20 ID, Drain Current [A] 15 10 5 0 25 50 75 100 125 150 o TC, Case Temperature [ C] 4 FDP18N50 / FDPF18N50 Rev. A www.fairchildsemi.com FDP18N50 / FDPF18N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) FDP18N50 / FDPF18N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve - FDP18N50 ZθJC(t), Thermal Response 10 0 D = 0 .5 10 0 .2 -1 PDM 0 .1 t1 t2 0 .0 5 0 .0 2 0 .0 1 10 * N o te s : o 1 . Z θ J C ( t) = 0 .5 3 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) -2 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] ZθJC(t), Thermal Response Figure 11-2. Transient Thermal Response Curve - FDPF18N50 10 D = 0 .5 0 0 .2 0 .1 10 PDM 0 .0 5 -1 t1 t2 0 .0 2 0 .0 1 * N o te s : o 10 1 . Z θ J C ( t) = 2 .1 5 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) -2 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] 5 FDP18N50 / FDPF18N50 Rev. A www.fairchildsemi.com FDP18N50 / FDPF18N50 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 FDP18N50 / FDPF18N50 Rev. A www.fairchildsemi.com FDP18N50 / FDPF18N50 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 FDP18N50 / FDPF18N50 Rev. A www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 8 FDP18N50 / FDPF18N50 Rev. A www.fairchildsemi.com FDP18N50 / FDPF18N50 500V N-Channel MOSFET Mechanical Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 9 FDP18N50 / FDPF18N50 Rev. A 2.76 ±0.20 4.70 ±0.20 0.35 ±0.10 www.fairchildsemi.com FDP18N50 / FDPF18N50 500V N-Channel MOSFET Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 10 FDP18N50 / FDPF18N50 Rev. A www.fairchildsemi.com FDP18N50 / FDPF18N50 500V N-Channel MOSFET TRADEMARKS