FDPF390N15A

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDPF390N15A N-Channel PowerTrench® MOSFET 150 V, 15 A, 40 mΩ Features Description • RDS(on) = 31 mΩ (Typ.) @ VGS = 10 V, ID = 15 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintain-ing superior switching performance. • Fast Switching Speed • Low Gate Charge, QG = 14.3 nC (Typ.) Applications • High Performance Trench Technology for Extremely Low RDS(on) • Consumer Appliances • High Power and Current Handling Capability • LED TV • RoHS Compliant • Synchronous Rectification • Uninterruptible Power Supply • Motor Solar Inverter D G G D S TO-220F S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Parameter Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt FDPF390N15A 150 Unit V ±20 V - Continuous (TC = 25oC,Silicon Limited) 15 - Continuous (TC = 100oC,Silicon Limited) - Pulsed (Note 1) 10 60 A (Note 2) 78 mJ (Note 3) 6.0 V/ns (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds. - Derate above 25oC A 22 W 0.18 W/oC -55 to +175 oC 300 oC Thermal Characteristics Symbol Parameter FDPF390N15A RθJC Thermal Resistance, Junction to Case, Max. 5.7 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2011 Fairchild Semiconductor Corporation FDPF390N15A Rev C1 1 Unit oC/W www.fairchildsemi.com FDPF390N15A — N-Channel PowerTrench® MOSFET December 2013 Part Number FDPF390N15A Top Mark FDPF390N15A Electrical Characteristics Symbol Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 150 - - V - 0.1 - V/oC µA Off Characteristics BVDSS ∆BVDSS / ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 µA, VGS = 0 V ID = 250 µA, Referenced to 25oC VDS = 120 V, VGS = 0 V - - 1 VDS = 120 V, TC = 125oC VGS = ±20 V, VDS = 0 V - - 500 - - ±100 2.0 - 4.0 V - 31 40 mΩ - 32 - S - 965 1285 pF - 96 130 pF pF nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 µA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 15A VDS = 10 V, ID = 15 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) VDS = 75 V, VGS = 0 V f = 1 MHz - VDS = 75 V,VGS = 0 V VDS = 75 V,ID = 27 A VGS = 10 V (Note 4) f = 1 MHz 5.8 - 169 - pF 14.3 18.6 nC 5.0 - nC - 2.0 - nC - 3.5 - nC - 1.4 - Ω - 14 38 ns - 10 30 ns - 20 50 ns - 5 20 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 75 V, ID = 27 A VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 15 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 64 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 15 A - - 1.25 V trr Reverse Recovery Time 63 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 27 A dIF/dt = 100 A/µs - 131 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. Starting TJ = 25°C, L = 3 mH, ISD = 7.2 A 3. ISD ≤ 15 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C 4. Essentially independent of operating temperature typical characteristics. ©2011 Fairchild Semiconductor Corporation FDPF390N15A Rev C1 2 www.fairchildsemi.com FDPF390N15A — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 200 200 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V *Notes: 1. VDS = 10V 2. 250µs Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 100 10 10 o 150 C o 25 C o -55 C *Notes: 1. 250µs Pulse Test o 2. TC = 25 C 1 0.1 1 1 VDS, Drain-Source Voltage[V] 5 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 6 7 VGS, Gate-Source Voltage[V] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 80 200 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 100 60 VGS = 10V 40 VGS = 20V o o 25 C 150 C 10 *Notes: 1. VGS = 0V o 20 *Note: TC = 25 C 0 20 40 60 ID, Drain Current [A] 80 2. 250µs Pulse Test 1 0.4 100 Figure 5. Capacitance Characteristics 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.3 Figure 6. Gate Charge Characteristics 2000 10 VGS, Gate-Source Voltage [V] 1000 Capacitances [pF] Ciss 100 Coss *Note: 1. VGS = 0V 2. f = 1MHz 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 1 10 VDS, Drain-Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDPF390N15A Rev C1 Crss VDS = 30V VDS = 75V VDS = 120V 8 6 4 2 *Note: ID = 27A 0 100 200 3 0 4 8 12 Qg, Total Gate Charge [nC] 16 www.fairchildsemi.com FDPF390N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 8. On-Resistance Variation vs. Temperature 1.10 2.6 1.08 2.4 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250µA 0.92 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.0 1.6 1.2 *Notes: 1. VGS = 10V 2. ID = 15A 0.8 0.4 -80 160 Figure 9. Maximum Safe Operating Area -40 0 40 80 120 o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature 300 16 100 VGS= 10V 100µs 10 ID, Drain Current [A] ID, Drain Current [A] 160 1ms 10ms 100ms 1 Operation in This Area is Limited by R DS(on) 0.1 DC *Notes: o 1. TC = 25 C 0.01 12 8 4 o 2. TJ = 150 C 3. Single Pulse 0.001 10 100 VDS, Drain-Source Voltage [V] 1 o RθJC =5.7 C/W 0 25 200 Figure 11. Eoss vs. Drain to Source Volatage IAS, AVALANCHE CURRENT (A) , [µJ] OSS 1.0 0.8 0.6 0.4 0.2 0 30 60 90 120 VDS, Drain to Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDPF390N15A Rev C1 150 Figure 12. Unclamped Inductive Switching Capability 1.2 0.0 50 75 100 125 o TC, Case Temperature [ C] 12 10 o STARTING TJ = 25 C o STARTING TJ = 150 C 1 0.01 150 4 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD) If R = 0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1] 0.1 1 tAV, TIME IN AVALANCHE (ms) 10 20 www.fairchildsemi.com FDPF390N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDPF390N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve ZθJC(t), Thermal Response [oC/W] 8 0.5 1 0.2 0.1 PDM 0.05 t1 0.02 0.1 t2 0.01 *Notes: 0.01 -5 10 ©2011 Fairchild Semiconductor Corporation FDPF390N15A Rev C1 o 1. ZθJC(t) = 5.7 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 5 10 100 www.fairchildsemi.com FDPF390N15A — N-Channel PowerTrench® MOSFET 50KΩ 50K Ω 200nF 200n F 12V VGS Same Same Type as DU DUT T Qg 10V 300nF 300n F VDS VGS Qgs Qgd DUT DU T IG = const. Charrge Cha Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT DUT VGS 10% 10% td(on d( on)) tr td(o d( of f) t on t of offf tf Figure 15. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDS DSS S - VDD L BVDS DSS S IAS ID RG VGS VDD ID (t) VDS (t) VDD DUT tp tp Ti Tim me Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDPF390N15A Rev C1 6 www.fairchildsemi.com FDPF390N15A — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDPF390N15A Rev C1 7 www.fairchildsemi.com B A 10.36 9.96 B 3.28 3.08 7.00 3.40 3.20 2.66 2.42 0.70 SEE NOTE "F" SEE NOTE "F" 6.88 6.48 1 X 45° B 16.00 15.60 16.07 15.67 (3.23) B 1 2.14 3 1.47 1.24 2.96 2.56 0.90 0.70 10.05 9.45 0.50 M A 30° 0.45 0.25 2.54 B 2.54 B 4.90 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. OPTION 1 - WITH SUPPORT PIN HOLE. OPTION 2 - NO SUPPORT PIN HOLE. G. DRAWING FILE NAME: TO220M03REV5 0.60 0.45 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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