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FDP4D5N10C / FDPF4D5N10C
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 128 A, 4.5 mΩ
Features
General Description
This N-Channel MV MOSFET is produced using ON
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized to minimize on-state resistance and yet maintain
superior switching performance with best in class soft body
diode.
Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 100 A
Extremely Low Reverse Recovery Charge, Qrr
100% UIL Tested
RoHS Compliant
Applications
Synchronous Rectification for ATX / Server / Telecom PSU
Motor Drives and Uninterruptible Power Supplies
Micro Solar Inverter
D
G
G
G
D
S
D
S
TO-220
S
TO-220F
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol
Ratings
Parameter
VDS
Drain to Source Voltage
FDP4D5N10C
100
VGS
Gate to Source Voltage
±20
±20
128*
128*
Drain Current -Continuous
ID
-Continuous
TC = 25°C
(Note 3)
TC = 100°C
(Note 3)
91
91
(Note 1)
512
512
-Pulsed
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
FDPF4D5N10C
100
(Note 2)
Units
V
V
A
486
mJ
Power Dissipation
TC = 25°C
150
37.5
Power Dissipation
TA = 25°C
2.4
2.4
-55 to +175
-55 to +175
°C
FDP4D5N10C
FDPF4D5N10C
Units
Operating and Storage Junction Temperature Range
W
* Drain current limited by maximum junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
1.0
4.0
RθJA
Thermal Resistance, Junction to Ambient
62.5
62.5
°C/W
Package Marking and Ordering Information
Device Marking
FDP4D5N10C
Device
FDP4D5N10C
Package
TO-220
Packing Mode
Tube
Quantity
50 units
FDPF4D5N10C
FDPF4D5N10C
TO-220F
Tube
50 units
Semiconductor Components Industries, LLC, 2017
June, 2017, Rev. 1.0
Publication Order Number:
FDP4D5N10C / FDPF4D5N10C/D
1
FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET
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Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
100
V
53
mV/°C
VDS = 80 V, VGS = 0 V
1
μA
VDS = 80 V, TJ= 150°C
500
μA
VGS = ±20 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 310 μA
3.2
4.0
V
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 100 A
4.0
4.5
mΩ
gFS
Forward Transconductance
VDS = 5 V, ID = 100 A
134
2.0
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
0.1
3615
5065
pF
2330
3265
pF
18
35
pF
1.1
2.2
Ω
29
47
ns
49
79
ns
41
66
ns
13
24
ns
48
68
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
Qoss
Output Charge
VDD = 50 V, ID = 100 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VDD = 50 V,
ID = 100 A
VDD = 50 V, VGS = 0 V
nC
19
nC
9
nC
150
nC
Drain-Source Diode Characteristic
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
128
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
512
A
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 100 A
1.0
1.3
V
trr
Reverse Recovery Time
VGS = 0 V, VDD = 50 V,
IF = 100 A, dIF/dt = 100 A/μs
82
132
ns
106
170
nC
71
114
ns
258
413
nC
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, VDD = 50 V,
IF = 100 A, dIF/dt = 300 A/μs
Notes:
1. Pulsed Id please refer to Figure “Forward Bias Safe Operating Area” for more details.
2. EAS of 486 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 18 A, VDD = 100 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 58 A.
3. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
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2
FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted.
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
240
VGS = 7 V
VGS = 6 V
180
120
VGS = 5.5 V
60
VGS = 5 V
0
0
1
2
3
4
5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
300
VGS = 5 V
4
VGS = 5.5 V
3
VGS = 6 V
VGS = 7 V
2
1
0
5
0
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
1.8
1.6
1.4
1.2
1.0
0.8
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
40
ID = 100 A
VGS = 10 V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
300
IS, REVERSE DRAIN CURRENT (A)
180
TJ = 175 oC
TJ = 25
oC
60
TJ = -55 oC
2
3
4
5
6
7
8
ID = 100 A
24
16
TJ = 150 oC
8
TJ = 25 oC
4
5
6
7
8
9
10
Figure 4. On-Resistance vs. Gate to
Source Voltage
VDS = 5 V
120
300
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
240
240
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
32
0
Figure 3. Normalized On Resistance
vs. Junction Temperature
ID, DRAIN CURRENT (A)
180
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
2.2
0
120
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
2.0
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
9
300
100
VGS = 0 V
10
TJ = 175 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
10
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
1.2
FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
10000
ID = 100 A
8
VDD = 50 V
VDD = 75 V
6
4
Coss
1000
100
Crss
10
2
0
Ciss
VDD = 25 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
f = 1 MHz
VGS = 0 V
0
10
20
30
40
1
0.1
50
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
100
160
o
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
RθJC = 1.0 C/W
TJ = 25 oC
10
TJ = 125 oC
TJ = 150 oC
1
0.001
0.01
0.1
1
10
100
120
VGS = 10 V
80
40
0
25
1000
50
100
125
150
175
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
1000
1000
10 μs
100
10
1
THIS AREA IS
LIMITED BY rDS(on)
100 μs
SINGLE PULSE
TJ = MAX RATED
1 ms
RθJC = 1.0 oC/W
TC = 25 oC
0.1
0.1
1
10 ms
100 ms
CURVE BENT TO
MEASURED DATA
10
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
75
o
tAV, TIME IN AVALANCHE (ms)
100
10 μs
100
10
1
THIS AREA IS
LIMITED BY rDS(on)
100 μs
SINGLE PULSE
TJ = MAX RATED
1 ms
RθJC = 4.0 oC/W
TC = 25 oC
0.1
0.1
400
VDS, DRAIN to SOURCE VOLTAGE (V)
1
10 ms
CURVE BENT TO
MEASURED DATA
10
100 ms
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Forward Bias Safe
Operating Area for FDPF4D5N10C
Figure 11. Forward Bias Safe
Operating Area for FDP4D5N10C
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4
400
FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
100000
SINGLE PULSE
RθJC = 1.0 oC/W
P(PK), PEAK TRANSIENT POWER (W)
P(PK), PEAK TRANSIENT POWER (W)
100000
TC = 25 oC
10000
100
-4
10
-3
10
-2
10
-1
10
0
1
10
TC = 25 oC
10000
1000
10
-5
10
SINGLE PULSE
RθJC = 4.0 oC/W
10
1000
2
10
100
10
-5
10
-4
10
t, PULSE WIDTH (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
-2
10
-1
0
10
1
10
10
2
10
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum
Power Dissipation for FDP4D5N10C
2
-3
10
Figure 14. Single Pulse Maximum
Power Dissipation for FDPF4D5N10C
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
PDM
t1
t2
NOTES:
SINGLE PULSE
0.001
-5
10
-4
10
ZθJC(t) = r(t) x RθJC
RθJC = 1.0 oC/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
-3
10
-2
-1
10
10
0
1
10
10
2
10
t, RECTANGULAR PULSE DURATION (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Figure 15. Junction-to-Case Transient Thermal Response Curve for FDP4D5N10C
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
t1
t2
NOTES:
0.01
ZθJC(t) = r(t) x RθJC
RθJC = 4.0 oC/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
-5
10
-4
10
-3
10
-2
-1
10
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 16. Junction-to-Case Transient Thermal Response Curve for FDPF4D5N10C
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5
2
10
FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
TO-220, Molded, 3-Lead, Jedec Variation AB (Delta)
ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other
countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON
Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a
critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall
indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is
subject to all applicable copyright laws and is not for resale in any manner.
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FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET
Dimensional Outline and Pad Layout
FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET
Dimensional Outline and Pad Layout
TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other
countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON
Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a
critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall
indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is
subject to all applicable copyright laws and is not for resale in any manner.
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7