FDPF7N50U

FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, 1.5  Features Description • RDS(on) = 1.5  (Max.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge (Typ.12.8 nC) • Low Crss (Typ. 9 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D G G D S TO-220 G D TO-220F S S Absolute Maximum Ratings Symbol Parameter FDPF7N50U VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) IDM Drain Current - Pulsed Unit 500 V 5* 3.0 * A A (Note 1) 20 * A 30 V 125 mJ VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 5 A EAR Repetitive Avalanche Energy (Note 1) 8.9 mJ (Note 3) dv/dt Peak Diode Recovery dv/dt PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (TC = 25C) - Derate above 25C 20 V/ns 31.3 0.25 W W/C -55 to +150 C 300 C * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FDPF7N50U RJC Thermal Resistance, Junction-to-Case, Max. 4.0 RJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 ©2009 Fairchild Semiconductor Corporation FDPF7N50U Rev. C0 1 Unit C/W www.fairchildsemi.com FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET March 2013 Device Marking Device Package Reel Size Tape Width Quantity FDPF7N50U FDPF7N50U TO-220F -- -- 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Unit 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250A, Referenced to 25C -- 0.5 -- V/C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125C --- --- 25 250 A A IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 2.5A -- 1.2 1.5  gFS Forward Transconductance VDS = 40V, ID = 2.5A -- 2.5 -- S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 720 940 pF -- 95 190 pF -- 9 13.5 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250V, ID = 5A RG = 25 (Note 4) VDS = 400V, ID = 5A VGS = 10V (Note 4) -- 6 20 ns -- 55 120 ns -- 25 60 ns -- 35 80 ns -- 12.8 16.6 nC -- 3.7 -- nC -- 5.8 -- nC -- -- 5 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 20 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 5A -- -- 1.6 V trr Reverse Recovery Time 40 -- ns Reverse Recovery Charge VGS = 0V, IS = 5A dIF/dt =100A/s -- Qrr -- 0.04 -- C NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 5A, VDD = 50V, L=10mH, RG = 25, Starting TJ = 25C 3. ISD  5A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2009 Fairchild Semiconductor Corporation FDPF7N50U Rev. C0 2 www.fairchildsemi.com FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 20 Figure 2. Transfer Characteristics VGS Top : 10.0 V 8.0V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V 1 10 ID , Drain Current [A] ID, Drain Current [A] 15 10 * Notes : 1. 250s Pulse Test 5 o o 150 C 0 10 o 25 C -1 10 2. TC = 25 C * Note : 1. VDS = 40V 2. 250s Pulse Test 0 0 10 20 30 40 -2 50 10 2 VDS, Drain-Source Voltage [V] 6 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature IDR , Reverse Drain Current [A] 2.5 2.0 VGS = 10V 1.5 1.0 VGS = 20V 0.5 1 10 0 10 o 150 C o 25 C * Notes : 1. VGS = 0V 2. 250s Pulse Test o * Note : TJ = 25 C 0.0 -1 0 5 10 15 10 20 0.2 0.4 0.6 0.8 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Ciss Coss Crss * Notes : 1. VGS = 0 V 2. f = 1 MHz 10 0 FDPF7N50U Rev. C0 1.8 1 10 VDS = 250V 10 VDS = 400V 8 6 4 2 * Note : ID = 57 A 0 0 5 10 15 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] ©2009 Fairchild Semiconductor Corporation 1.6 VDS = 100V Crss = Cgd 10 1.4 12 Ciss = Cgs + Cgd (Cds = shorted) 100 1.2 Figure 6. Gate Charge Characteristics Coss = Cds + Cgd 1000 1.0 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitance [pF] 8 VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage RDS(ON) [],Drain-Source On-Resistance 4 3 www.fairchildsemi.com FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Drain Current Vs. Case Temperature 6 1.1 ID, Drain Current [A] BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.0 * Notes : 1. VGS = 0 V 0.9 4 2 2. ID = 250 A 0.8 -100 -50 0 50 100 150 0 25 200 50 75 o TJ, Junction Temperature [ C] 100 125 150 o TC, Case Temperature [ C] Figure 9. Maximum Safe Operating Area - FDPF7N50U 10 us 1 ID, Drain Current [A] 10 100 us 1 ms 10 ms 100 ms 0 10 Operation in This Area is Limited by R DS(on) DC -1 10 * Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 10 VDS, Drain-Source Voltage [V] Figure 10. Transient Thermal Response Curve ZJC(t), Thermal Response D = 0 .5 10 0 0 .2 0 .1 0 .0 5 10 PDM 0 .0 2 -1 t1 0 .0 1 * N o te s : t2 o 1 . Z  JC (t) = 4 .0 C /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z  J C (t) s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] ©2009 Fairchild Semiconductor Corporation FDPF7N50U Rev. C0 4 www.fairchildsemi.com FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET Typical Performance Characteristics (Continued) FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FDPF7N50U Rev. C0 5 www.fairchildsemi.com FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FDPF7N50U Rev. C0 6 www.fairchildsemi.com FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET Mechanical Dimensions TO-220M03 Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation FDPF7N50U Rev. C0 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2009 Fairchild Semiconductor Corporation FDPF7N50U Rev. C0 8 www.fairchildsemi.com FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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