FDS3512

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Other names and brands may be claimed as the property of others. FDS3512 FDS3512 80V N-Channel PowerTrench® MOSFET Features General Description • 4.0 A, 80 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • Low gate charge (13nC Typical) • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. • High performance trench technology for extremely low RDS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D D • High power and current handling capability D D SO-8 S S S 5 4 6 3 7 2 8 1 G Absolute Maximum Ratings Symbol RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 80 V VGSS Gate-Source Voltage ±20 V ID Drain Current 4.0 A – Continuous (Note 1a) – Pulsed PD 30 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG W 1.0 –55 to +175 °C (Note 1a) 50 °C/W (Note 1) 25 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3512 FDS3512 13’’ 12mm 2500 units  2001 Semiconductor Component Industries, LLC. October-2017, Rev. 2 Publication Order Number: FDS3512 /D Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) W DSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 40 V, ID = 4.0 A 90 mJ 4.0 A Off Characteristics ID = 250 µA V BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 64 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA 4 V On Characteristics 80 80 mV/°C (Note 2) ID = 250 µA 2 2.4 VGS(th)n Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C –6 50 55 91 ID = 4.0 A ID = 3.7A ID = 4.0 A, TJ = 125°C VDS = 5 V mV/°C 70 80 135 ID(on) On–State Drain Current VGS = 10 V, VGS = 6 V, VGS = 10 V, VGS = 10 V, GFS Forward Transconductance VGS = 10 V, ID = 4.0 A 14 S VDS = 40 V, V GS = 0 V, f = 1.0 MHz 634 pF 20 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge 58 pF 28 pF (Note 2) VDD = 40 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω VDS = 40 V, ID = 4.0 A, VGS = 10 V 7 14 ns 3 6 ns 24 38 ns 4 8 ns 13 18 nC 2.4 nC 2.8 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.8 2.1 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1in2 pad of 2 oz copper b) 105 °C/W when mounted on a 0.04 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% www.onsemi.com 2 c) 125 °C/W when mounted on a minimum pad. FDS3512 Electrical Characteristics FDS3512 Typical Characteristics 1.8 20 VGS = 10V 4.5V 6.0V ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5.0V 15 4.0V 10 5 1.6 VGS = 4.0V 1.4 4.5V 5.0V 1.2 6.0V 0.8 0 0 1 2 3 4 0 5 5 Figure 1. On-Region Characteristics. 15 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.18 2.5 ID = 4A VGS = 10V 2.2 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.9 1.6 1.3 1 0.7 0.4 ID =2A 0.14 TA = 125oC 0.10 0.06 TA = 25oC 0.02 -50 -25 0 25 50 75 100 125 150 175 2 4 o TJ, JUNCTION TEMPERATURE ( C) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) 20 VDS = 5V ID, DRAIN CURRENT (A) 10V 1 15 10 TA = 125oC 5 25oC VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 o -55 C 0.0001 0 2 3 4 0 5 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDS3512 Typical Characteristics 1000 VDS = 20V ID = 4A f = 1MHz VGS = 0 V 40V 8 800 60V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 CISS 600 400 200 COSS CRSS 0 0 0 3 6 9 12 15 0 20 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 80 50 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 60 Figure 8. Capacitance Characteristics. 100 100µs 10 1ms 10ms 100ms 1s 10s DC 1 VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 TA = 25oC 0.01 0.1 1 10 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 100 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 125 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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