FDS4141-F085

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Other names and brands may be claimed as the property of others. ® P-Channel PowerTrench MOSFET -40V, -10.8A, 19.0mΩ Applications „ Control switch in synchronous & non-synchronous buck Features „ Typ rDS(on) = 10.5mΩ at VGS = -10V, ID = -10.5A „ Load switch „ Inverter „ Typ rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -8.4A „ Typ Qg(TOT) = 35nC at VGS = -10V „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant „ Qualified to AEC Q101 D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S D D G SO-8 S S Pin 1 S ©2009Semiconductor Components Industries, LLC. September-2017,Rev. 1 Publication Order Number: FDS4141-F085/D FDS4141-F085 P-Channel PowerTrench® MOSFET FDS4141-F085 Symbol Drain to Source Voltage VDSS VGS ID Parameter Ratings -40 Units V Gate to Source Voltage ±20 V Drain Current Continuous (VGS = 10V) -10.8 A Pulsed -36 EAS Single Pulse Avalanche Energy 229 PD Power Dissipation 1.6 W -55 to +150 oC TJ, TSTG Operating and Storage Temperature mJ Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient SO-8, 1in2 copper pad area 30 o 81 oC/W C/W Package Marking and Ordering Information Device Marking FDS4141 Device FDS4141-F085 Package SO-8 Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -40 - - V IDSS Zero Gate Voltage Drain Current VDS = -32V, - - -1 µA IGSS Gate to Source Leakage Current VGS = ±20V, - - ±100 nA V On Characteristics VGS(th) rDS(on) gFS Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250µA -1.0 -1.7 -3.0 ID = -10.5A, VGS = -10V - 10.5 13.0 ID = -8.4A, VGS = -4.5V - 14.8 19.0 ID = -10.5A, VGS = -10V, TJ = 125oC - 15.3 19.0 ID = -10.5A, VDD = -5V 34 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(TOT) Total Gate Charge at -10V VGS = 0 to -10V Qg(-5) Total Gate Charge at -5V VGS = 0 to -5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge VDS = -20V, VGS = 0V, f = 1MHz VDD = -20V ID = -10.5A www.onsemi.com 2 - 2005 - pF - 355 - pF - 190 - pF - 5.0 - Ω - 35 45 nC - 18.6 24.2 nC - 5.2 - nC - 6.6 - nC FDS4141-F085 P-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 25 ns td(on) Turn-On Delay Time - 9.7 - ns tr Rise Time - 4.4 - ns td(off) Turn-Off Delay Time - 41 - ns tf Fall Time - 11.6 - ns toff Turn-Off Time - - 84 ns ISD = -10.5A - -0.8 -1.3 ISD = -2.1A - -0.7 -1.2 VDD = -20V, ID = -10.5A VGS = -10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = -10.5A, dSD/dt = 100A/µs V - 26 34 ns - 13.4 17.4 nC Notes: 1: Starting TJ = 25oC, L = 6.2mH, IAS = -8.6A This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All ON Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. www.onsemi.com 3 FDS4141-F085 P-Channel PowerTrench® MOSFET Electrical Characteristics TA = 25oC unless otherwise noted 1.0 -ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 9 1.2 0.8 0.6 0.4 0.2 VGS = -10V 6 VGS = -4.5V 3 o RθJA = 81 C/W 0 0.0 0 25 50 75 100 125 TA, CASE TEMPERATURE (oC) 150 Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 25 50 75 100 125 TA, CASE TEMPERATURE (oC) 150 Figure 2. Maximum Continuous Drain Current vs Ambient Temperature DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 81 C/W 0.001 -3 10 -2 10 -1 2 10 1 10 t, RECTANGULAR PULSE DURATION (s) 3 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 -IDM, PEAK CURRENT (A) VGS = -10V TA = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 150 - TA I = I25 125 10 SINGLE PULSE o RθJA = 81 C/W 1 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 4 2 10 3 10 FDS4141-F085 P-Channel PowerTrench® MOSFET Typical Characteristics 60 -IAS, AVALANCHE CURRENT (A) -ID, DRAIN CURRENT (A) 100 10 1ms 1 10 10ms 100ms 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.01 0.01 SINGLE PULSE TJ = MAX RATED o TA = 25 C If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1s DC STARTING TJ = 150oC 1 0.01 0.1 1 10 100 300 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area STARTING TJ = 25oC 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability 36 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 36 VDD = -5V 27 18 TJ = 150oC 9 TJ = 25oC TJ = -55oC 0 0 1 2 3 -VGS, GATE TO SOURCE VOLTAGE (V) 40 30 TJ = 150oC 20 TJ = 25oC 0 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage VGS = -4V VGS = -3.5V 18 VGS = -3V 9 0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID = -10.5A PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) VGS = -4.5V 1 2 -VDS, DRAIN TO SOURCE VOLTAGE (V) 3 Figure 8. Saturation Characteristics 50 2 VGS = -10V 27 0 4 Figure 7. Transfer Characteristics 10 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 10 1.8 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -75 ID = -10.5A VGS = -10V -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature www.onsemi.com 5 FDS4141-F085 P-Channel PowerTrench® MOSFET Typical Characteristics 1.10 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = -250µA 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pF) 4000 Ciss 1000 Coss f = 1MHz VGS = 0V 100 0.1 Crss 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 13. Capacitance vs Drain to Source Voltage 60 ID = -1mA 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature -VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED GATE THRESHOLD VOLTAGE 1.4 10 ID = -10.5A 8 VDD = -20V 6 VDD = -15V VDD = -25V 4 2 0 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) 35 40 Figure 14. Gate Charge vs Gate to Source Voltage www.onsemi.com 6 FDS4141-F085 P-Channel PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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