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FDS4141
P-Channel PowerTrench® MOSFET
-40V, -10.8A, 13.0mΩ
Features
General Description
Max rDS(on) = 13.0mΩ at VGS = -10V, ID = -10.5A
This P-Channel MOSFET has been produced using On
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized BVDSS capability to offer
superior performance benefit in the applications and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications.
Max rDS(on) = 19.0mΩ at VGS = -4.5V, ID = -8.4A
High performance trench technology for extremely low rDS(on)
RoHS Compliant
Applications
Control switch in synchronous & non-synchronous buck
Load switch
Inverter
D
D
D
D
G
SO-8
S
S
Pin 1
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
VGS
ID
Parameter
Ratings
-40
Units
V
Gate to Source Voltage
±20
V
Drain Current -Continuous
-10.8
-Pulsed
-36
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
(Note 3)
294
Power Dissipation
TA = 25°C
(Note 1a)
5
Power Dissipation
TA = 25°C
(Note 1b)
2.5
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1)
25
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDS4141
Device
FDS4141
Package
SO-8
Semiconductor Components Industries, LLC, 2017
April, 2017, Rev. 1.0
Reel Size
13’’
Tape Width
12mm
Quantity
2500units
Publication Order Number:
FDS4141
1
FDS4141 P-Channel PowerTrench® MOSFET
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Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
-40
ID = -250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = -32V,
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
V
-33
mV/°C
-1
µA
±100
nA
-3.0
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to 25°C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
-1.0
-1.6
5.3
mV/°C
VGS = -10V, ID = -10.5A
11.0
13.0
VGS = -4.5V, ID = -8.4A
15.2
19.0
VGS = -10V, ID = -10.5A, TJ= 125°C
16.8
19.9
VDD = -5V, ID = -10.5A
37
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = -20V, VGS = 0V,
f = 1MHz
f = 1MHz
2005
2670
pF
355
475
pF
190
285
pF
Ω
5
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to -10V
VGS = 0V to -5V
VDD = -20V, ID = -10.5A,
VGS = -10V, RGEN = 6Ω
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -20V,
ID = -10.5A
10
20
5
10
ns
ns
42
68
ns
12
22
ns
35
49
nC
19
27
nC
6
nC
7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = -10.5A
(Note 2)
-0.8
-1.3
VGS = 0V, IS = -2.1A
(Note 2)
-0.7
-1.2
26
42
ns
14
26
nC
IF = -10.5A, di/dt = 100A/µs
V
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50°C/W when mounted on a
1in2 pad of 2 oz copper.
b) 125°C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. UIL condition: Starting TJ = 25°C, L = 3mH, IAS = -14A, VDD = -40V, VGS = -10V.
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2
FDS4141 P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
4.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
36
-ID, DRAIN CURRENT (A)
VGS = -3.5V
VGS = -4V
27
VGS = - 4.5V
VGS = -10V
18
VGS = -3V
9
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
3.5
VGS = -3V
3.0
2.5
VGS = -3.5V
2.0
VGS = -4V
1.5
VGS = - 4.5V
1.0
VGS = -10V
0.5
0
9
Figure 1. On-Region Characteristics
1.6
ID = -10.5A
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
36
50
ID = -10.5A
VGS = -10V
100 125 150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
30
TJ = 125oC
20
10
TJ = 25oC
0
2
TJ, JUNCTION TEMPERATURE ( C)
o
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On- Resistance
vs Junction Temperature
100
36
-IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
27
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
27
VDS = -5V
TJ = 150oC
18
TJ =
25oC
9
TJ = -55oC
0
18
-ID, DRAIN CURRENT(A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
0
1
2
3
VGS = 0V
10
1
TJ = 25oC
0.1
TJ = -55oC
0.01
0.001
0.0
4
TJ = 150oC
0.2
0.4
0.6
0.8
1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
Figure 5. Transfer Characteristics
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3
1.2
FDS4141 P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
5000
ID = -10.5A
Ciss
8
VDD = -20V
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE(V)
10
6
VDD = -15V
VDD = -25V
4
2
1000
Coss
Crss
f = 1MHz
VGS = 0V
100
60
0.1
0
0
5
10
15
20
25
30
35
40
1
12
-ID, DRAIN CURRENT (A)
20
-IAS, AVALANCHE CURRENT(A)
40
Figure 8. Capacitance vs Drain
to Source Voltage
Figure 7. Gate Charge Characteristics
10
TJ = 25oC
TJ = 125oC
9
VGS = -10V
6
VGS = -4.5V
3
o
RθJA = 50 C/W
1
0.01
0.1
1
10
100
0
25
500
50
P(PK), PEAK TRANSIENT POWER (W)
10
1ms
10ms
0.1
100ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 125oC/W
10s
DC
TA = 25oC
0.01
0.01
0.1
1
10
125
150
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
100
THIS AREA IS
LIMITED BY rDS(on)
100
o
Figure 9. Unclamped Inductive
Switching Capability
1
75
TA, AMBIENT TEMPERATURE ( C)
tAV, TIME IN AVALANCHE(ms)
-ID, DRAIN CURRENT (A)
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
2000
1000
100 200
-VDS, DRAIN to SOURCE VOLTAGE (V)
VGS = -10V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
10
t, PULSE WIDTH (sec)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
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4
100
1000
FDS4141 P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
0.001
o
RθJA = 125 C/W
0.0001
-4
10
-3
10
-2
10
-1
10
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
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5
100
1000
FDS4141 P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDS4141 P-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other
countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON
Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a
critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall
indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is
subject to all applicable copyright laws and is not for resale in any manner.
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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