FDS4410

April 1998 FDS4410 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 10 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS = 10 V The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. with PWM controllers. RDS(ON) = 0.0200 Ω @ VGS = 4.5 V. Optimized for use in switching DC/DC converters Very fast switching . The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. SuperSOTTM-6 SOT-23 SuperSOTTM-8 D D S F D 10 44 D D SO-8 S pin 1 S G S Absolute Maximum Ratings Low gate charge (typical 22 nC). SO-8 SOT-223 SOIC-16 5 4 6 3 7 2 8 1 TA = 25oC unless other wise noted Symbol Parameter FDS4410 Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current - Continuous 10 A (Note 1a) - Pulsed PD Power Dissipation for Single Operation 50 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ,TSTG Operating and Storage Temperature Range W 1 -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W © 1998 Fairchild Semiconductor Corporation FDS4410 Rev.B1 Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 V ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA o TJ = 55°C ON CHARACTERISTICS mV /oC 21 1 µA 10 µA 100 nA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 1 RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, I D = 10 A 2 3 TJ =125°C VGS = 4.5 V, I D = 9 A V mV /oC -4.5 0.011 0.0135 0.018 0.023 0.017 0.02 50 Ω ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V A gFS Forward Transconductance VDS = 10 V, I D= 10 A 27 S VDS = 15 V, VGS = 0 V, f = 1.0 MHz 1340 pF 340 pF 125 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDS= 15 V, I D= 1 A 12 22 ns tr Turn - On Rise Time VGS = 10 V , RGEN = 6 Ω 13 24 ns tD(off) Turn - Off Delay Time 38 60 ns tf Turn - Off Fall Time 10 18 ns Qg Total Gate Charge VDS = 15 V, I D = 10 A, 22 31 nC Qgs Gate-Source Charge VGS = 10 V 5 nC Qgd Gate-Drain Charge 4 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.73 2.1 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50OC/W on a 1 in2 pad of 2oz copper. b. 105OC/W on a 0.04 in2 pad of 2oz copper. c. 125OC/W on a 0.006 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDS4410 Rev.B1 Typical Electrical Characteristics 3 R DS(on) , NORMALIZED VGS = 10V 6.0V 5.0V 4.5V 40 4.0V 30 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 50 20 3.5V 10 0 0 0.5 1 V DS 1.5 2 2.5 5.0V 5.5V 7.0V 10V 1 0 10 40 50 0.05 I D = 5A I D = 10 A VGS = 10 V 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 0.04 0.03 TA = 125°C 0.02 0.01 TA = 25°C 0 150 2 4 TJ , JUNCTION TEMPERATURE (°C) Figure 3. On-Resistance Variation Temperature. 50 20 10 0 3 4 10 50 30 VGS , GATE TO SOURCE VOLTAGE (V) 8 Figure 4 . On-Resistance Variation with Gate-to-Source Voltage. with IS , REVERSE DRAIN CURRENT (A) 40 6 V GS , GATE TO SOURCE VOLTAGE (V) TA = -55°C 25°C 125°C VDS = 5V I D , DRAIN CURRENT (A) 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 2 20 I D , DRAIN CURRENT (A) R DS(ON) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED 4.5V 1.5 0.5 3 1.8 DRAIN-SOURCE ON-RESISTANCE 4.0V 2 , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 1.6 VGS = 3.5V 2.5 5 V GS = 0V 10 1 TA = 125°C 0.1 25°C -55°C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5 . Transfer Characteristics. Figure 6 . Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4410 Rev.B1 Typical Electrical And Thermal Characteristics 2000 V DS = 5V I D = 10A C iss 10V 8 15V CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) 10 6 4 1000 500 C oss 200 2 5 10 15 20 25 Figure 7. Gate Charge Characteristics. 1 2 5 10 30 Figure 8. Capacitance Characteristics. 30 100 IT LIM N) S(O D R 100 us 1m s 10 10m s 100 ms 1s 10s DC 3 0.5 VGS = 10V SINGLE PULSE RθJA =125°C/W TA = 25°C 0.1 0.01 0.05 0.1 0.2 DS 20 15 10 5 0.5 V SINGLE PULSE R θJA =125° C/W T A = 25°C 25 POWER (W) 30 ID , DRAIN CURRENT (A) 0.5 V DS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) 1 2 5 10 20 30 0 0.01 50 0.1 0.5 1 10 50 100 300 SINGLE PULSE TIME (SEC) , DRAIN-SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE C rss 100 0.1 0 0 f = 1 MHz V GS = 0V 1 0.5 0.2 0.1 0.05 0.02 0.01 D = 0.5 0.2 R θJA (t) = r(t) * R θJA R θJA = 125°C/W 0.1 0.05 0.02 P(pk) 0.01 t1 Single Pulse 0.005 0.002 0.001 0.0001 t2 TJ - TA = P * R θJA(t) Duty Cycle, D = t1 /t2 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4410 Rev.B1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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