FDS4465_F085

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). • –13.5 A, –20 V. RDS(ON) = 8.5 mΩ @ VGS = –4.5 V RDS(ON) = 10.5 mΩ @ VGS = –2.5 V RDS(ON) = 14 mΩ @ VGS = –1.8 V • Fast switching speed Applications • Power management • High performance trench technology for extremely low RDS(ON) • Load switch • High current and power handling capability • Battery protection • Qualified to AEC Q101 • RoHS Compliant D D D D SO-8 S Pin 1 S S Absolute Maximum Ratings Symbol G Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current 3 7 2 8 1 Ratings –20 – Continuous (Note 1a) Units V ±8 V –13.5 A –50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG 6 o – Pulsed PD 4 TA=25 C unless otherwise noted Parameter VDSS 5 Operating and Storage Junction Temperature Range Thermal Characteristics W 1 –55 to +150 °C RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 85 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size FDS4465 FDS4465-F085 13’’ ©2012 Semiconductor Components Industries, LLC. September-2017, Rev. 2 Tape width 12mm Quantity 2500 units Publication Order Number: FDS4465-F085/D FDS4465-F085 P-Channel 1.8V Specified PowerTrench® MOSFET FDS4465-F085 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Off Characteristics Min Typ Max Units BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = –250 µA VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA –1.5 V On Characteristics –20 –12 ID = –250 µA, Referenced to 25°C Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –13.5 A VDS = –10 V, f = 1.0 MHz V GS = 0 V, Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge –0.6 3 6.7 8.0 9.8 9.0 8.5 10.5 14 13 –50 mΩ A 70 S 8237 pF 1497 pF 750 pF VDD = –10V, VGS = –4.5 V, VDS = –10 V, VGS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –13.5 A, 20 Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.1 A Voltage (Note 2) 36 ns 24 38 ns 300 480 ns 140 224 ns 86 120 nC 20 nC 11 nC Drain–Source Diode Characteristics and Maximum Ratings VSD mV/°C (Note 2) Turn–On Delay Time tr –0.4 VGS = –4.5 V, ID = –13.5 A ID = –12 A VGS = –2.5 V, ID = –10.5 A VGS = –1.8 V, VGS=–4.5 V, ID =–13.5A, TJ=125°C Dynamic Characteristics IS mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) td(on) V –0.6 –2.1 A –1.2 V Notes 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when 2 mounted on a 1in pad of 2 oz copper b) 105 °C/W when 2 mounted on a 04 in pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% www.onsemi.com 2 c) 125 °C/W when mounted on a minimum pad. FDS4465-F085 P-Channel 1.8V Specified PowerTrench® MOSFET Electrical Characteristics 50 3 40 -2.0V -2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -4.5V -1.5V -1.8V 30 20 10 0 0 0.5 1 2.6 2.2 -1.8V 0 10 30 40 50 0.025 1.4 1.2 1 0.8 ID = -6.3A 0.02 0.015 TA = 125oC 0.01 0 25 50 75 100 125 150 TA = 25oC 0.005 0.6 0 175 0 1 TJ, JUNCTION TEMPERATURE (oC) 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 50 -IS, REVERSE DRAIN CURRENT (A) VDS = -5.0V -ID, DRAIN CURRENT (A) 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.5V -ID, DRAIN CURRENT (A) ID = -13.5A VGS = -10V -25 -2.5V 1 0.6 1.5 Figure 1. On-Region Characteristics. -50 -2.0V 1.4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 VGS = -1.5V 1.8 40 30 20 TA = 125oC o 25 C 10 -55oC 0 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 0 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDS4465-F085 P-Channel 1.8V Specified PowerTrench® MOSFET Typical Characteristics 10000 VDS = -5V ID = -13.5A 4 8000 -15V 3 2 6000 4000 1 2000 0 0 COSS CRSS 0 20 40 60 80 100 0 Qg, GATE CHARGE (nC) 1ms 10 100ms 1s 10s DC VGS = -4.5V SINGLE PULSE RθJA = 125oC/W 0.1 TA = 25oC 0.01 0.1 1 20 10 100 SINGLE PULSE RθJA = 125 C/W TA = 25 C 40 30 20 10 0 0.001 0.01 0.1 -VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 50 100µs 10ms 1 10 Figure 8. Capacitance Characteristics. P(pk), PEAK TRANSIENT POWER (W) 100 RDS(ON) LIMIT 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V CISS -10V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 o RθJA = 125 C/W 0.1 0.05 0.01 P(pk) 0.02 0.01 t1 SINGLE PULSE 0 001 0.0001 0.001 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0 01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 FDS4465-F085 P-Channel 1.8V Specified PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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