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FDS4470
40V N-Channel PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 12.5 A, 40 V. RDS(ON) = 9 mΩ @ VGS = 10 V
• Low gate charge (45 nC)
• High performance trench technology for extremely
Applications
low RDS(ON)
• High power and current handling capability
• DC/DC converter
D
D
DD
DD
DD
G
SS G
S
SS S
SO-8
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
40
V
VGSS
Gate-Source Voltage
+30/–20
V
ID
Drain Current
12.5
A
– Continuous
(Note 1a)
– Pulsed
50
Power Dissipation for Single Operation
PD
(Note 1a)
2.5
(Note 1b)
1.4
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
W
1.2
–55 to +175
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4470
FDS4470
13’’
12mm
2500 units
©2006 Fairchild Semiconductor Corporation
FDS4470 Rev D1 (W)
FDS4470
December 2006
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS
Drain-Source Avalanche Energy
IAS
Drain-Source Avalanche Current
Single Pulse, VDD=40V, ID=12.5A
370
mJ
12.5
A
Off Characteristics
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250 μA
VGS = 0 V,
ID = 250 μA, Referenced to 25°C
Zero Gate Voltage Drain Current
VDS = 32 V,
VGS = 0 V
IGSSF
Gate–Body Leakage, Forward
VGS = 30 V,
IGSSR
Gate–Body Leakage, Reverse
BVDSS
ΔBVDSS
ΔTJ
IDSS
On Characteristics
40
V
42
mV/°C
1
μA
VDS = 0 V
100
nA
VGS = –20 V, VDS = 0 V
–100
nA
(Note 2)
ID = 250 μA
VDS = VGS,
ID = 250 μA, Referenced to 25°C
2
3.9
–8
5
6
9
9
14
V
VGS(th)
ΔVGS(th)
ΔTJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source On–Resistance
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 10 V,
ID = 12.5 A
45
S
VDS = 20 V,
f = 1.0 MHz
V GS = 0 V,
2659
pF
605
pF
298
pF
VGS = 10 V, ID = 12.5 A
VGS = 10 V, ID = 12.5 A,TJ=125°C
mV/°C
25
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 20 V,
VGS = 10 V,
VDS = 20 V,
VGS = 10 V
ID = 1 A,
RGEN = 6 Ω
ID = 12.5 A,
14
25
ns
12
22
ns
37
59
ns
29
46
ns
45
63
nC
11.2
nC
11
nC
FDS4470 Rev D1 (W)
FDS4470
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
trr
Maximum Continuous Drain–Source Diode Forward Current
(Note 2)
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A
Voltage
Diode Reverse Recovery Time
IF = 12.5 A, diF/dt = 100 A/µs
Qrr
Diode Reverse Recovery Charge
VSD
0.7
2.1
1.2
A
V
33
nS
39
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
2
mounted on a 1in
pad of 2 oz copper
b) 105°C/W when
2
mounted on a .04 in
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
FDS4470 Rev D1 (W)
FDS4470
Electrical Characteristics
FDS4470
Typical Characteristics
2
80
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
5.5V
70
ID, DRAIN CURRENT (A)
6.0V
60
5.0V
50
40
30
4.5V
20
10
0
0
0.5
1
1.5
2
VGS = 5.0V
1.8
1.6
5.5V
1.4
6.0V
1.2
7.0V
0
20
40
60
80
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2
0.019
ID = 12.5A
VGS = 10V
1.8
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10V
0.8
2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.6
1.4
1.2
1
0.8
0.6
0.4
ID = 6.3A
0.016
0.013
TA = 125oC
0.01
0.007
TA = 25oC
0.004
-50
-25
0
25
50
75
100
125
150
175
4
5
o
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
90
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
75
ID, DRAIN CURRENT (A)
8.0V
1
60
45
TA = 125oC
30
25oC
15
-55oC
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
2.5
3.5
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4470 Rev D1 (W)
FDS4470
Typical Characteristics
10
4000
VGS, GATE-SOURCE VOLTAGE (V)
f = 1 MHz
VGS = 0 V
VDS = 10V
ID = 12.5A
20V
8
3200
CAPACITANCE (pF)
30V
6
4
2
CISS
2400
1600
COSS
800
CRSS
0
0
0
10
20
30
40
50
0
10
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
40
50
P(pk), PEAK TRANSIENT POWER (W)
100μs
1ms
10ms
RDS(ON) LIMIT
10
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
0.1
TA = 25oC
0.01
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
30
Figure 8. Capacitance Characteristics.
100
ID, DRAIN CURRENT (A)
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
0.1
o
RθJA = 125 C/W
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4470 Rev D1 (W)
FAIRCHILD SEMICONDUCTOR TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
ACEx™
ActiveArray™
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Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
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EnSigna™
FACT®
FAST®
FASTr™
FPS™
FRFET™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC®
UniFET™
VCX™
Wire™
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APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
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design.
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Semiconductor reserves the right to make changes at
any time without notice to improve design.
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that has been discontinued by Fairchild semiconductor.
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Rev. I22
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