FDS4780
40V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 10.8 A, 40 V. RDS(ON) = 10.5 mΩ @ VGS = 10 V
• Low gate charge (30 nC)
• High performance trench technology for extremely
Applications
low RDS(ON)
• High power and current handling capability
• DC/DC converter
D
D
DD
DD
DD
G
SS G
S
SS S
SO-8
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
40
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
(Note 1a)
10.8
A
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.4
– Continuous
– Pulsed
45
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
W
1.2
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4780
FDS4780
13’’
11mm
2500 units
2003 Fairchild Semiconductor Corporation
FDS4780 Rev B (W)
FDS4780
March 2003
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS
Drain-Source Avalanche Energy
IAS
Drain-Source Avalanche Current
Single Pulse, VDD=20V, ID=10.8A
240
mJ
10.8
A
Off Characteristics
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
Zero Gate Voltage Drain Current
VDS = 32 V,
VGS = 0 V
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V,
IGSSR
Gate–Body Leakage, Reverse
BVDSS
∆BVDSS
∆TJ
IDSS
On Characteristics
40
V
42
mV/°C
1
µA
VDS = 0 V
100
nA
VGS = –20 V, VDS = 0 V
–100
nA
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source On–Resistance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 10 V,
ID = 10.8 A
36
S
VDS = 20 V,
f = 1.0 MHz
V GS = 0 V,
1686
pF
384
pF
185
pF
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
2
3.9
–8
8
13
VGS = 10 V, ID = 10.8 A
VGS = 10 V,ID = 10.8 A, TJ=115°C
5
V
mV/°C
10.5
21
22
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 20 V,
VGS = 10 V,
VDS = 20 V,
VGS = 10 V
ID = 1 A,
RGEN = 6 Ω
ID = 10.8 A,
11
22
ns
9
18
ns
30
48
ns
15
27
ns
30
40
nC
9
nC
10
nC
FDS4780 Rev B (W)
FDS4780
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
0.7
trr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
(Note 2)
VGS = 0 V, IS = 2.1 A
Voltage
Diode Reverse Recovery Time
IF = 10.8 A, diF/dt = 100 A/µs
27
nS
Qrr
Diode Reverse Recovery Charge
58
nC
VSD
2.1
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
2
mounted on a 1in
pad of 2 oz copper
b) 105°C/W when
2
mounted on a .04 in
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4780 Rev B (W)
FDS4780
Electrical Characteristics
FDS4780
Typical Characteristics
80
VGS = 10V
2
6.0V
5.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
70
60
50
5.0V
40
30
4.5V
20
10
0
0
1
2
3
VGS = 5.0V
1.8
1.6
5.5V
1.4
6.0V
1.2
10V
0.8
4
0
20
40
60
80
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2
0.025
RDS(ON), ON-RESISTANCE (OHM)
ID = 10.8A
VGS = 10V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
ID = 5.4A
0.022
0.019
TA = 125oC
0.016
0.013
0.01
TA = 25oC
0.007
-50
-25
0
25
50
75
100
125
150
175
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
80
IS, REVERSE DRAIN CURRENT (A)
25oC
TA = -55oC
VDS = 5V
o
125 C
ID, DRAIN CURRENT (A)
8.0V
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
7.0V
60
40
20
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4780 Rev B (W)
FDS4780
Typical Characteristics
2400
ID = 10.8 A
VDS = 10V
20V
8
f = 1 MHz
VGS = 0 V
2000
30V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
6
4
CISS
1600
1200
800
COSS
2
400
CRSS
0
0
5
10
15
20
25
30
0
35
0
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
1ms
10ms
RDS(ON) LIMIT
100ms
1s
10s
DC
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
0.1
TA = 25oC
0.01
0.01
0.1
1
40
10
100
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
30
50
100µs
1
20
Figure 8. Capacitance Characteristics.
100
10
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
0.1
o
RθJA = 125 C/W
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4780 Rev B (W)
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2
